Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Power enhancement of the cw 12.08 μm NH3 Raman laser with the addition of H2/He buffer gases (1983)
    Springer
    Applied physics 32 (1983), S. 105-111 
    Details
    ISSN: 1432-0649
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The effects of H2, He, and N2 buffer gases on the efficiency of the cw 12.08 μm NH3 Raman laser are studied experimentally. The laser output power is increased by nearly 60% with the addition of H2 or He, which we essentially attribute to the high thermal conductivity of these buffer gases. In the optimum conditions (NH3/H2:1/1 mixture with 0.35 Torr partial pressure of NH3) 3.3 W output power at 12.08 μm is obtained which corresponds to 11% power conversion efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00688814
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Band-edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCy alloys (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 875-877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of strained Si1−x−yGexCy alloys grown by rapid thermal chemical vapor deposition on Si(100) is investigated. Two dominant features are reported: At low pump intensities, the photoluminescence is dominated by a deep level broad luminescence peak around 800 meV whereas at high pump intensities, a well-resolved band-edge luminescence (no phonon and transverse optic replica) is observed. At 77 K, we attribute this band-edge feature to an electron-hole plasma luminescence of the ternary alloy. The dependences of the deep level and band-edge peaks versus the excitation power density are, respectively square-root-like or superlinear. A blue shift of the energy gap of Si1−x−yGexCy alloys with respect to Si1−xGex alloy is observed. The blue shift increase with carbon content corresponds to what is expected for the bulk alloy. An eventual influence of the strain relaxation cannot be excluded.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110981
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Reflection and transmission characterization of a hexagonal photonic crystal in the mid infrared (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5061-5064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication of a hexagonal photonic crystal of air cylinders in silicon and its characterization in the mid infrared. The structure was obtained in electrochemically etched macroporous silicon. Simultaneous reflection and transmission measurements were undertaken for the two main crystal orientations and two polarizations. The first four orders of photonic band gaps were identified by transmission attenuations and reflection peaks. A complete photonic band gap was observed at 5.8 μm, in good agreement with numerical calculations. The measured reflection characteristics of the crystal demonstrate the application possibilities of photonic crystals. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367401
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Period-doubling and period-quadrupling for an actively mode-locked laser diode with extended cavity (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7615-7617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Active mode-locking of a laser diode in an external cavity has led to the observation of new instabilities. We report period-doubling manifested by the alternation of weak and strong pulses in the mode-locked laser pulse train. We also report period-quadrupling where four successive pulses have different amplitudes. These results are attributed to the imperfect antireflection coating of the semiconductor chip, the latter constituting a regenerative amplifier with a time-dependent delay for amplification. A qualitative analysis is proposed and validated by numerical simulations from a diode laser rate equation model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345802
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    High-transmission defect modes in two-dimensional metallic photonic crystals (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8499-8501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental and numerical study of point defect modes in a two-dimensional photonic crystal of metallic rods is presented. A method is developed to optimize the characteristics of transmission resonances in the second (and true) photonic gap of these structures. Transmission maxima close to −2 dB have been obtained by using a combination of a small number of point defects. Such a value is among the highest ones reported to date for two-dimensional photonic crystals with point defects. Besides, the width of the transmission window is shown to be adjustable in a wide range by changing the rod diameter. These results could be applicable to the fabrication of low-cost and compact filters in both the microwave and near-terahertz domains. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370634
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1822-1824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p–i–n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4–1.5 μm wavelength. The electroluminescence is observed up to room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308526
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Submicrometer resolution Yablonovite templates fabricated by x-ray lithography (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 770-772 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and optical characterization of diamond-like photonic structures with 1.3 μm lattice constants. In analogy with the first Yablonovite obtained by a mechanical drilling of a dielectric material, the structures are fabricated in poly(methylmethacrylate) resist using three consecutive exposures to an x-ray beam through a triangular lattice of holes. Up to six crystal periods are obtained in a 6.2-μm-thick resist. The measured reflection and transmission spectra show well contrasted photonic gaps in agreement with numerical simulations. This demonstrates the good optical quality of the structures that can be used as porous templates for transferring the diamond-like pattern to high-refractive-index dielectrics or metals. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306646
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 40-42 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the results of a comparative study on heavy- and light-ion-irradiated semiconductors for fast saturable absorbers. The linear absorption of bulk GaAs irradiated either by Au+ ions or protons was measured over a wide range of wavelengths below the gap. Good correspondence was found between the absorption measurements and the calculated elementary defect concentrations. Defect clustering is evidenced in the heavy-ion case. Pump–probe experiments were used to measure the time-resolved absorption variations for weakly irradiated GaAs samples under intense illumination. Much shorter carrier recombination times are estimated for the heavy-ion case. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125649
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Experimental demonstration of electrically controllable photonic crystals at centimeter wavelengths (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1625-1627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrically controllable photonic crystals have been fabricated by inserting p-i-n diodes in two-dimensional metallic lattices. A first structure uses a square lattice of thin and discontinuous metallic wires. A second structure is fabricated using stacks of printed circuits with metallic strips. The p-i-n diodes are soldered along the different metallic wires or strips. The crystals have been characterized between 1 and 20 GHz. We show that they can be operated as wideband switchable electromagnetic windows with high transmission or reflection contrast between on and off states. A ∼25 dB transmission modulation is reported within the first transmission band of a two-period crystal. We also show that the switching domain and modulation rate can be varied with a separate bias control for each crystal plane. Finally, the distance between crystal planes is used to tune the operating frequency range. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124775
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 μm with 2.5% tunability (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1537-1539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate operation of a high-power quantum fountain unipolar laser relying on intersubband emission in optically pumped GaAs/AlGaAs quantum wells. The collected power per facet is as large as 2.3 W at 20 K and 1.5 W at 120 K, which translates into 6.6 W optical power per facet at low temperature accounting for collection efficiency. The maximum operating temperature is 135 K. We also demonstrate that the lasing wavelength can be tuned by as much as Δλ/λ(approximate)2.5% simply by tuning the pump wavelength. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123608
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...