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Digitale Medien

Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots (2001)

Sauvage, S. ; Boucaud, P. ; Brunhes, T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 2327-2329

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report on a comparison between the midinfrared absorption and the photocurrent response of n-doped InAs/GaAs self-assembled quantum dots. The absorption, resonant at 160 meV, is polarized along the z growth axis of the dots. The photocurrent is dominated by a z-polarized resonance around 220 meV (5.6 μm wavelength). A weaker component of the photocurrent is observed for an in-plane polarized excitation. The photoresponse can be measured for a 0 V applied bias. The photoresponsivity is investigated as a function of the applied bias. The responsivity and the dark current exhibit an asymmetric profile versus the external bias. This asymmetry is correlated to the structural asymmetry of the quantum dot layers. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1365411

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2

Digitale Medien

Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots (1999)

Brunhes, T. ; Boucaud, P. ; Sauvage, S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 835-837

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Resonant second-harmonic generation is reported in InAs/GaAs self-assembled quantum dots. Frequency doubling is observed between confined states in the valence band of the quantum dots. The second-order nonlinear susceptibility is maximum at 168 meV (7.4 μm wavelength) and is observed for an in-plane polarized excitation. A value of χzxx(2) as large as 2×10−7 (m/V) is measured for one dot plane. A three-dimensional numerical calculation of the valence band states shows that the second-harmonic generation involves a resonant excitation between the h000 and h101 states and a state close to the continuum wetting layer states. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.124529

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Digitale Medien

Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition (2000)

Brunhes, T. ; Boucaud, P. ; Sauvage, S. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 1822-1824

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p–i–n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4–1.5 μm wavelength. The electroluminescence is observed up to room temperature. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1308526

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