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  • 1
    Electronic Resource
    Electronic Resource
    Period-doubling and period-quadrupling for an actively mode-locked laser diode with extended cavity (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7615-7617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Active mode-locking of a laser diode in an external cavity has led to the observation of new instabilities. We report period-doubling manifested by the alternation of weak and strong pulses in the mode-locked laser pulse train. We also report period-quadrupling where four successive pulses have different amplitudes. These results are attributed to the imperfect antireflection coating of the semiconductor chip, the latter constituting a regenerative amplifier with a time-dependent delay for amplification. A qualitative analysis is proposed and validated by numerical simulations from a diode laser rate equation model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345802
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  • 2
    Electronic Resource
    Electronic Resource
    High second-harmonic conversion efficiency of quasi-phase-matched LiTaO3 waveguides pumped by single-mode pulsed AlGaAs laser diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2263-2265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the averaged second-harmonic conversion efficiency of quasi-phase-matched LiTaO3 waveguides can be increased by a factor larger than 15 with the use of single-mode pulsed AlGaAs laser diodes as the optical sources. The proton exchange followed by thermal annealing is used both to periodically change the sign in d33 nonlinear coefficient and to fabricate the waveguides. Laser pulses are produced by strong rf modulation of the diode current while single-mode operation is achieved with a grating-tuned external cavity. The averaged conversion efficiency is found to linearly increase with peak power of pulses even in the case of pulses whose spectral width is larger than the spectral acceptance of LiTaO3 waveguides. Experimental results are in agreement with calculated ones. The conversion efficiency of 450 %/W presently reached at optimum (i.e., 1% for 2.2 mW pump and 1 cm interaction length) is among the highest performances reported to date for frequency doubling of laser diodes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115120
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  • 3
    Electronic Resource
    Electronic Resource
    Absorption and resonant dispersion associated with normal incidence intersubband transitions in Si/SiGe quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3462-3464 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation of midinfrared beam by photoinduced intersubband absorption in undoped Si/SiGe quantum wells is investigated at normal incidence. Optical pumping of interband transitions is used to photocreate carriers in the wells. The modulated transmission of the sample is measured by Fourier transform spectroscopy. Resonant dispersion associated with intersubband transitions as well as interference effects in the quantum well stack are clearly evidenced. It is shown that the phase modulation due to refractive index variations may compensate for amplitude modulation due to absorption. Measurements are well fitted by a phenomenological model. It is also shown that the modulation depth and the wavelength modulation profile both depend on the interband excitation wavelength. This result is attributed to the different nature of photoinduced transitions according to the excitation wavelength. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115247
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  • 4
    Electronic Resource
    Electronic Resource
    Photoinduced intersubband absorption in Si/SiGe quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2948-2950 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated photoinduced infrared absorption in p-doped Si/SiGe quantum wells. The absorption spectra exhibit two distinct features: free-carrier absorption and intersubband absorption in the valence band. The photoinduced absorption in both p and s polarizations is found to depend on the carrier density and strongly differs from the original absorption of the doped quantum wells. Photoinduced intersubband absorption is attributed to carriers away from the Brillouin zone center. We show that photoinduced intersubband absorption spectroscopy can provide useful information on valence band mixing effects in Si/SiGe quantum wells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114821
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  • 5
    Electronic Resource
    Electronic Resource
    High-transmission defect modes in two-dimensional metallic photonic crystals (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8499-8501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental and numerical study of point defect modes in a two-dimensional photonic crystal of metallic rods is presented. A method is developed to optimize the characteristics of transmission resonances in the second (and true) photonic gap of these structures. Transmission maxima close to −2 dB have been obtained by using a combination of a small number of point defects. Such a value is among the highest ones reported to date for two-dimensional photonic crystals with point defects. Besides, the width of the transmission window is shown to be adjustable in a wide range by changing the rod diameter. These results could be applicable to the fabrication of low-cost and compact filters in both the microwave and near-terahertz domains. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370634
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  • 6
    Electronic Resource
    Electronic Resource
    Detailed analysis of second-harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 215-217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of resonant intersubband second-harmonic generation in asymmetric GaAs/AlGaAs quantum wells using a cw or Q-switched tunable CO2 laser as the pumping source. The dependence of the second-harmonic intensity with the pump photon wavelength is presented for the first time. A Lorentzian-like second-harmonic line shape is found with a maximum at 10.9 μm and a linewidth of 0.4 μm (4.1 meV). These results are in good agreement with theoretical predictions. The expected quadratic dependence of the second-harmonic conversion efficiency with pump intensity is well verified for intensities up to 150 kW/cm2. The calibrated second-harmonic power reaches 0.13 μW for a cw pump power of 0.8 W. The value of 7.2×10−7 m/V deduced for the second-order nonlinear susceptibility is about 1900 times greater than that found in bulk GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103742
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  • 7
    Electronic Resource
    Electronic Resource
    Reflection and transmission characterization of a hexagonal photonic crystal in the mid infrared (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5061-5064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication of a hexagonal photonic crystal of air cylinders in silicon and its characterization in the mid infrared. The structure was obtained in electrochemically etched macroporous silicon. Simultaneous reflection and transmission measurements were undertaken for the two main crystal orientations and two polarizations. The first four orders of photonic band gaps were identified by transmission attenuations and reflection peaks. A complete photonic band gap was observed at 5.8 μm, in good agreement with numerical calculations. The measured reflection characteristics of the crystal demonstrate the application possibilities of photonic crystals. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367401
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  • 8
    Electronic Resource
    Electronic Resource
    Optical saturation of intersubband absorption in GaAs-AlxGa1−xAs quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 116-118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated intersubband absorptions between the conduction ground state and the first excited state of two AlxGa1−xAs/GaAs/AlxGa1−xAs multiple quantum well structures with x=0.3 and 85 A(ring) well width, and with x=0.57 and 96 A(ring) well width. Small-signal measurements show absorption peaks at 10.45 and 10.15 μm, respectively. Under an intense resonant excitation from a pulsed CO2 laser, saturation of the intersubband absorption occurred. The saturation intensity is estimated to be 340±120 kW/cm2 for the first sample and 375±120 kW/cm2 for the second. From these values, we have deduced subband decay times of the order of 10.6±3.5 ps for the first sample and 15.5±5 ps for the second.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100386
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  • 9
    Electronic Resource
    Electronic Resource
    Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1822-1824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p–i–n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4–1.5 μm wavelength. The electroluminescence is observed up to room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308526
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  • 10
    Electronic Resource
    Electronic Resource
    Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 40-42 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the results of a comparative study on heavy- and light-ion-irradiated semiconductors for fast saturable absorbers. The linear absorption of bulk GaAs irradiated either by Au+ ions or protons was measured over a wide range of wavelengths below the gap. Good correspondence was found between the absorption measurements and the calculated elementary defect concentrations. Defect clustering is evidenced in the heavy-ion case. Pump–probe experiments were used to measure the time-resolved absorption variations for weakly irradiated GaAs samples under intense illumination. Much shorter carrier recombination times are estimated for the heavy-ion case. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125649
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