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  • 1
    ISSN: 1432-069X
    Keywords: Keywords HSP70 ; Human melanoma cells ; Ultraviolet B ; Apoptosis ; Caspase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The heat shock response is a highly conserved reaction common to all cells and organisms. It has been reported that hyperthermic treatment can induce the expression of the heat shock protein (HSP) and can protect cells from ultraviolet (UV) B radiation. In this study, we evaluated the effects of induced HSP70 on resistance to UV radiation. G361 amelanotic human melanoma cells were irradiated with increasing doses of UVB. UVB irradiation caused apoptotic cell death in these cells. Following transfection with MFG.hsp70.puro plasmid, the expression of HSP70 was determined. Compared to control vector-transfected cells, hsp70-transfected cells showed significantly elevated levels of HSP70 and were highly resistant to UVB irradiation. In order to investigate the effects of HSP70 on the apoptotic pathway, the changes in caspase-3 and PARP were analyzed. Following UVB irradiation, activation of caspase-3 and cleavage of PARP were observed in control vector-transfected cells, and the changes in these molecules were inhibited in the hsp70-transfected cells. These results suggest that UVB-induced apoptosis of melanoma cells is accompanied by caspase-3 activation and PARP cleavage, which can be prevented by an overexpression of HSP70.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Medical & biological engineering & computing 38 (2000), S. 469-472 
    ISSN: 1741-0444
    Keywords: Extracellular recording ; Active neural probe ; CMOS ; Source follower ; Differential amplifier ; Signal-to-device-noise ratio
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Abstract A noise performance design method for the pre-amplifiers of an active neural probe is given. The on-chip circuitry of the active neural probe consists of CMOS devices that show high-/ low-frequency noise, so that the device noise can become dominant. Analysis of the signal-to-device-noise ratio (SDNR) for the CMOS source follower buffer and two-stage differential voltage amplifier is given. Closed-form expressions for the output noise power are derived and exploited to tailor the parameters that are controllable during circuit design. The output SDNR is calculated considering the real extracellular action potentials, the electrode-electrolyte interface and the noise spectrum of CMOS devices from typical foundries. It is shown that the output device noise power can be much higher than the output signal power if the devices at the input stage of the pre-amplifier are made as small as given fabrication technology permits. Quantitative information of the circuit parameters to achieve an SDNR higher than 5 for neural spikes with 60μV amplitude are provided for both preamplifier types.
    Type of Medium: Electronic Resource
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