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  • 1
    Electronic Resource
    Electronic Resource
    31P NMR relaxation measurements of the phosphate backbone of a double stranded hexadeoxynucleotide in solution: determination of the chemical shift anisotropy (1990)
    Springer
    European biophysics journal 18 (1990), S. 347-355 
    Details
    ISSN: 1432-1017
    Keywords: Chemical shift anisotropy ; 31P relaxation ; DNA dynamics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Physics
    Notes: Abstract The five phosphates of the deoxynucleotide d(CpGpTpApCpG)2 have been assigned by two-dimensional heteronuclear NMR spectroscopy. The chemical shift anisotropy and correlation time of each phosphate group has been determined from measurements of the spin-lattice, spin-spin relaxation rate constants and the 31P-{1H} nuclear Overhauser enhancement (NOE) at three magnetic field strengths (4.7 T, 9.4 T, and 11.75 T) and two temperatures (288 K and 298 K). As expected, the relaxation data require two mechanisms to account for the observed rate constants, i.e. dipole-dipole and chemical shift anisotropy. At 9.4 T and 11.75 T, the latter mechanism dominates the relaxation, leading to insignificant NOE intensities. The correlation time, chemical shift anisotropy and effective P-H distance were obtained from least-squares fitting to the data. Comparison of the fitted value for the correlation time with that obtained from 1H measurements shows that the molecule behaves essentially as rigid rotor on the nanosecond timescale. Large amplitude motions observed in long segments of DNA are due to bending motions that do not contribute significantly to relaxation in short oligonucleotides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00196925
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  • 2
    Electronic Resource
    Electronic Resource
    An electronic dynamic compensator for response time of oxygen electrodes (1974)
    New York, NY [u.a.] : Wiley-Blackwell
    Biotechnology and Bioengineering 16 (1974), S. 279-284 
    Details
    ISSN: 0006-3592
    Keywords: Chemistry ; Biochemistry and Biotechnology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/bit.260160210
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  • 3
    Electronic Resource
    Electronic Resource
    A generalized mathematical model for the growth kinetics of Saccharomyces cerevisiae with experimental determination of parameters (1974)
    New York, NY [u.a.] : Wiley-Blackwell
    Biotechnology and Bioengineering 16 (1974), S. 431-454 
    Details
    ISSN: 0006-3592
    Keywords: Chemistry ; Biochemistry and Biotechnology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A general model of the kinetics of microbial growth has been developed involving the kinetics of incorporation of substrate into biomass and the maintenance energy requirements.Results obtained from batch cultures of the yeast Saccharomyces cerevisiae growing in synthetic media at pH 5.1 and 30°C permitted all biological parameters in the model to be calculated.Values obtained for these parameters were: maximum specific glucose uptake rate (μSm), 2.08 g/g biomass/hr; apparent Michaelis constant for glucose (KS), 0.1 g/liter (5.5 × 10-4M) apparent Michaelis constant for oxygen (KL), 1.4% O2 (3.2 × 10-6 M) quantitative index of the Pasteur effect (b), 4.9 × 10-4%-1 O2 (207 M -1). Under conditions of strongly substrate-repressed respiration the values obtained for YATP and P/O were constant over the course of the exponential phase of growth (YATP = 10.4 g biomass/mole ATP; P/O = 3 moles ATP/atom 0). Mass balances for aerobic and anaerobic cultures confirmed the results obtained form the generalized model. Results presented suggested the operation of a mechanism for regulating energy-yielding metabolism which involved an equilibrium between the systems of oxidative phosphorylation and dephosphorylation and was dependent upon the level of catbolite repression.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/bit.260160402
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition, annealing and characterisation of high-dielectric-constant metal oxide films (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 163-175 
    Details
    ISSN: 1057-9257
    Keywords: ULSI ; high dielectric constant ; metal oxides ; deposition ; annealing ; characterisation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Flims of metal oxides, such as Ta2O5, Nb2O5, Al2O3, HfO2, ZrO2 and TiO2 have been fabricated by use of different precursor materials, deposition techniques and annealing techniques. Several analytical methods were applied to study the layers. New data of fundamental properties of these metal oxides are reported and related to practical features that are of importance in device design and manufacturing of advanced, highly integrated devices. This overview may facilitate the choice of an optimal combination of precursor material, deposition technique and corresponding annealing procedure for a specific application of these metal oxide films in microelectronics.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050305
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  • 5
    Electronic Resource
    Electronic Resource
    Low-Pressure chemical vapour deposition of tantalum pentoxide films for ulsi devices using tantalum pentaethoxide as precursor (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 299-308 
    Details
    ISSN: 1057-9257
    Keywords: LPCVD ; Tantalum pentoxide ; High dielectric constant ; ULSI devices ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A laminar flow low-pressure chemical vapour deposition (LPCVD) system (LAM IntegrityTM) has been used to deposit tantalum pentoxide (Ta2O5) from Ta(OEt)5 films in the presence of oxygen (O2) at 470 °C at a typical deposition rate of 4 nm min-1. Uniformities of 〈1.5% (SD 1σ) over a 150 mm silicon substrate were obtained. The layers were annealed under different conditions. It was discovered that the films did not change their stoichiometry as determined by Rutherford backscattering (RBS). The as-deposited films were amorphous but became crystalline (β-Ta2O5) at temperatures 〉 700 °C. The transmission electron microscopy (TEM) results on crystallisation behaviour were supported by X-ray diffraction data. The electrical properties of the Ta2O5 films have been characterised using MIS (metal/insulator/silicon) capacitor structures. Leakage values of 〈10-6 A cm-2 at 6 MV cm-1 equivalent applied electric field and breakdown strengths of 〉7 MV cm-1 at 1.6 μA were obtained for annealed layers. Compound dielectric constants (native silicon oxide thickness of about 2.5 nm plus Ta2O5 of various thicknesses) between 14 and 〉30 have been measured. The electrical properties reveal the potential use of Ta2O5 as a storage capacitor dielectric in 64 and 256 Mbit DRAM (dynamic random access memory) devices.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010607
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