ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
An ionized cluster beam (ICB) source was used to deposit A1 onto two types of silicon oxides. One was a thermal oxide generated by steam oxidation of Si at 900°C. The other was a P-doped oxide deposited on Si at 425°C. During Al deposition, 60 μm diameter wires were held at the substrates to serve as masks. After A1 deposition, the wires were removed and the masked areas were examined by scanning electron microscopy (SEM) and by scanning Auger microprobe (SAM). The ICB source was operated at 0, 3 and 6 kV accleration voltages. The substrates were held at 80, 200 and 400°C during A1 depositions. The A1 deposition rate averaged 24 nm min.-1 The chamber pressure during deposition was 3 × 10-4 Pa. The diffusion distance of A1l under a mask edge was determined from the SEM micrographs and SAM line scans. The maximum diffusion distance occurred at 200°C for both substrates, with the exception of the 0 kV A1 beam deposited on the low-temperature oxide (LTO). On the high-temperature oxide (HTO), the maximum diffusion distance was 29 μm at 6 kV acceleration voltage. The minimum diffusion distance was 8 μm at 70-80°C on the LTO for acceleration voltages of 0 and 3 kV.
Additional Material:
7 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740150216
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