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  • 1
    Electronic Resource
    Electronic Resource
    Iterative refinement of approximations to a generalized inverse of a matrix (1982)
    Springer
    Computing 28 (1982), S. 79-87 
    Details
    ISSN: 1436-5057
    Keywords: Generalized inverse ; iterative refinement ; 65F20 ; 15A09
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Description / Table of Contents: Zusammenfassung Es werden ALGOL-Prozeduren zur Nachkorrektur einer näherungsweise berechneten, verallgemeinerten Inversen einer Matrix sowie einige Ergebnisse von Testrechnungen mit schlecht konditionierten, rangdefizienten Matrizen angegeben.
    Notes: Abstract ALGOL procedures for the iterative refinement of an approximation to a generalized inverse of a matrix and some results of numerical tests with ill-conditioned and rank-deficient matrices are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02237999
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of the interface structure on the barrier height of homogeneous Schottky contacts (1999)
    Springer
    The European physical journal 7 (1999), S. 457-466 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 73.30.+y Surface double layers, Schottky barriers, and work functions - 73.40.Ei Rectification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Unreconstructed interfaces may be prepared by evaporation of thick Pb films onto surfaces at room temperature. Current-voltage and capacitance-voltage characteristics of such Schottky contacts were measured in the temperature range between 140 and 300 K. The experimental data are analyzed by applying the thermionic-emission theory of inhomogeneous metal-semiconductor contacts as well as the “standard” thermionic-emission theory. From both methods the Schottky barrier height of laterally homogeneous contacts results as 0.724 eV. This value is by 74 meV larger than the previously observed barrier heights of laterally homogeneous interfaces. Similar differences were reported for unreconstructed and reconstructed Al- and contacts. The reduced barrier heights of all these interfaces are explained by the electric dipole associated with the stacking faults of reconstructions at surfaces and interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050634
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    Paper (German National Licenses)
    Fulltext
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