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  • 1
    Electronic Resource
    Electronic Resource
    Nonresonant third-order optical nonlinearity of all-carbon molecules C60 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3025-3026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonresonant third-order hyperpolarizability of all-carbon molecules C60 is measured by nanosecond degenerate four-wave-mixing experiment in C60 toluene solution. The value of γ1111 measured is 1.6×10−31 esu, which corresponds to an estimated value of the third-order nonlinear optical susceptibility χ(3)1111E = 3.3 × 10−9 esu for the solid compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351391
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  • 2
    Electronic Resource
    Electronic Resource
    Femtosecond studies of coherent acoustic phonons in gold nanoparticles embedded in TiO2 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 612-614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.15 THz coherent acoustic phonons have been observed in gold nanoparticles embedded in TiO2 thin films by virtue of femtosecond time-resolved transmissivity measurements at room temperature. The generation of these phonons is attributed to the resonant excitation of localized surface plasmon in gold nanoparticles. Their damping time is 55 ps which is acquired by fitting the oscillatory part of time-resolved transmissivity to single exponentially damped cosine function. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371907
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  • 3
    Electronic Resource
    Electronic Resource
    Experiments on space-charge waves in electron beams propagating through a resistive-wall channel (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1699-1709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized longitudinal space-charge waves in a transport channel with a resistive wall are investigated experimentally. The space-charge waves with various pulse widths are generated in electron beams with energies of 3.0–8.5 keV and currents of 30–135 mA, and they are transported through a resistive channel with a resistance of 5–10 kΩ and a length of 1 m. The resistive channel, made of a glass tube with a resistive material coating, is surrounded by a long solenoid which provides the focusing for the beam. The localized space-charge waves are measured with current monitors and energy analyzers at the entrance and exit of the resistive channel, and the wave-amplitude growth and damping rates are determined. The measured results are compared with the theory in the long-wavelength range. For localized waves with short widths, where the long-wavelength approximation is not valid any more, dispersion and distributed capacitance effects on the growth/damping rates are discussed. In addition, preliminary results on the energy width measurements of space-charge waves are presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370950
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  • 4
    Electronic Resource
    Electronic Resource
    Texture and stress of Ag films in Ag/Ti, Ag/Cr bilayers, and self-encapsulated structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7773-7777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture of evaporated Ag films prepared on Ti or Cr underlayers before and after encapsulation process has been studied by x-ray diffraction. In addition, the stress state in self-encapsulated Ag/Ti structures has also been investigated using a "sin2 ψ" technique. Silver films deposited on Ti layers exhibit a strong 〈111〉 texture, which is in contrast to the nearly random orientation of Ag films on Cr underlayers. The minimization of interfacial energy with respect to lattice match can account for this underlayer dependence. After an encapsulation process involving Ti reactions in an ammonia ambient, the texture of Ag films in Ag/Ti bilayers is further enhanced. Highly textured Ag films may provide the basis for electromigration-resistant Ag metallization in integrated circuit devices. For the Ag/Ti bilayer structures, a low tensile stress of approximately 61 MPa arising from the nonequilibrium growth during the film deposition is present in the Ag films. This results in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress is produced by the encapsulation process at 600 °C. Most of this stress relaxes during the cooling stage and a residual tensile stress of ∼320 MPa in the film plane was determined. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365386
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  • 5
    Electronic Resource
    Electronic Resource
    Femtosecond time-resolved optical response of phthalocyanine Langmuir–Blodgett film (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4648-4651 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of 2,9,16,23-tetra-heptadecylamido-substituted vanadyl phthalocyanine Langmuir–Blodgett film was studied with femtosecond laser pulses. After the excitation into the first electronic excited band, an ultrafast decay due to phonon-exciton coupling greatly affected by temperature was observed. Following this process, exciton-exciton annihilation leads to the recovery of the ground state with a decay time of about 10 ps. The Frenkel exciton theory was employed to give a complete interpretation of the dynamics. An even slower relaxation was also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355915
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization and determination of the band-gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 601-603 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple quantum well samples have been grown by atmospheric pressure metalorganic chemical vapor deposition at In compositions from 9 to 28% and layer thicknesses ranging from 15 to 140 A(ring), depending upon the composition. Selected samples containing three quantum wells of a given composition but with different thicknesses were characterized by x-ray double-crystal diffractometry, low-temperature photoluminescence, and transmission electron microscopy (TEM). Using a simulation technique based on the dynamical theory of x-ray diffraction in concert with TEM measurements, the In composition in the quantum well as well as the thicknesses can be directly extracted. The peak positions of the photoluminescence are used to determine the strained and unstrained energy gap and the conduction band offsets associated with InxGa1−xAs of a given composition. We have found the discontinuities to be 60% of the difference in the energy gap of GaAs and strained InxGa1−xAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104570
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  • 7
    Electronic Resource
    Electronic Resource
    Ligand effects in platinum binding to DNA. A comparison of DNA binding properties for cis- and trans-[PtCl2(amine)2] (amine = NH3, pyridine) (1993)
    s.l. : American Chemical Society
    Biochemistry 32 (1993), S. 9632-9638 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00088a015
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  • 8
    Electronic Resource
    Electronic Resource
    Amorphous silica nanowires: Intensive blue light emitters (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3076-3078 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method. Silica was produced in the form of amorphous nanowires at a diameter of ∼15 nm and a length up to hundreds micrometers. The SiONWs emit stable and high brightness blue light at energies of 2.65 and 3.0 eV. The intensity of the emission is two orders of magnitude higher than that of porous silicon. The SiONWs may have potential applications in high-resolution optical heads of scanning near-field optical microscope or nanointerconnections in future integrated optical devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122677
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 97-99 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed differential reflection dynamics in In0.518Ga0.492As/InP multiple quantum wells, using the pump–probe technique, and examined the photoluminescence spectra to determine the interface quality for the samples studied. Our results show that the interface quality and well width of the quantum wells (QWs) strongly influence the differential reflection dynamics. The experimental results provide a direct evidence to demonstrate that photoexcited carrier diffusion in cap layer and barriers along the direction perpendicular to sample surface plays a dominant role in determining the differential reflection dynamics of the QWs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120656
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  • 10
    Electronic Resource
    Electronic Resource
    Differential reflection dynamics in InAsxP1−x/InP (x≤0.35) strained-multiple-quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4430-4435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the pump-probe technique, we have observed time-resolved differential reflection in InAsxP1−x/InP (x≤0.35) strained-multiple-quantum wells. The experimental results show that barrier height, interface roughness and well width influence strongly the differential reflection dynamics. For samples with the same interface quality and almost the same well width, the delay time of the differential reflection decreases with increasing barrier height, while for the sample with rough interface and narrower wells, the delay time of the differential reflection is much slower, although it has a larger barrier height. To understand the experimental results, we have performed a simulation study of temporal and spatial evolutions of photoexcited carriers in the samples, and the influence of various physics processes on the photoexcited carrier dynamics has been discussed. From the calculated and the measured results, we conclude that carrier diffusion in the cap layer and the barriers plays a dominant role in determining the differential reflection dynamics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367202
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