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  • 1
    Electronic Resource
    Electronic Resource
    Growth of single-phase PrBa0.7Sr1.3Cu3O7 thin films and the role of lattice strain on the transport properties (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 981-983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-phase PrBa0.7Sr1.3Cu3O7 thin films with the Sr dopant concentration exceeding the solid solubility limit were epitaxially grown on (001) SrTiO3 and (001) LaAlO3 substrates by pulsed laser deposition (PLD) method. The resistivity of the doped films grown on LaAlO3 was significantly lower than that of PrBa2Cu3O7. For most of the films grown on SrTiO3, the resistivity was higher than that of PrBa2Cu3O7. The results were explained by considering the Sr-doping effect and lattice-mismatch-induced strain effect. This work shows the potential of PLD to grow single-phase films with the dopant concentration exceeding the solid solubility limit. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120615
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  • 2
    Electronic Resource
    Electronic Resource
    Alloy composition dependence of defect energy levels in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S (x≤0.24) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1862-1867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect energy levels in metalorganic chemical vapor deposition (MOCVD) grown GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S epilayers (x≤0.24) have been studied by photoluminescence (PL) and photoconductivity (PC) measurements. To understand the origin of the observed deep levels, we have determined the temperature dependence of the intensity and half-width of the dominant deep-level PL peaks. We find that (1) the dominant deep-level peaks of the samples grown on the same substrate are related to the epilayer composition, and move to higher energies with increasing gallium content; (2) the dominant deep-level peaks of the samples with the same epilayer composition grown on different substrates are different. They are attributed to the impurity in the substrate diffusing into the epilayer during MOCVD growth, forming an impurity-vacancy complex. The following tentative assignments are proposed: the dominant deep-level peaks in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S are attributed to the emission of a (V)P-(Fe)III complex and a (V)III-(S)P complex, respectively. Comparing the deep level with the near-band-edge emission we show that (1) all deep levels are independent of the band edge as x is varied; (2) the composition dependences of the deep levels associated with such complexes depend on the site occupied by the impurity atom.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354794
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5921-5926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of InAsP/InP strained multiple quantum wells have been experimentally determined in the temperature range 7–300 K. In order to understand the temperature behavior of the photoluminescence, a theoretical calculation is presented that takes into account the temperature-induced variations in band gap, carrier effective mass, biaxial strain, and exciton binding energy. The results show that the energy of the transition E1H between the n=1 electron subband and the n=1 heavy-hole subband changes as a function of temperature, and depends mainly on the evolution of the strained band gap of the InAsP layers. This is because in the temperature range 7–300 K the variations of the electron subband energy and the exciton binding energy are much less than those of the strained band gap, while the variation of the heavy-hole subband energy can be neglected. These results also explain why, for a lattice-matched quantum well, the variation of exciton peak energies with temperature follows that of the forbidden energy gap of the bulk material in the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358481
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of oxygen content on the structural, transport, and magnetic properties of La1−δMn1−δO3 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6327-6330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (110) oriented La1−δMn1−δO3 thin films with different oxygen content were grown on (001) LaAlO3 substrates by pulsed laser deposition. Samples prepared in higher oxygen partial pressures show a ferromagnetic transition around 200 K. The transport is thermally activated with a change in slope at the ferromagnetic transition. Samples prepared and annealed in vacuum show signatures of mixed ferromagnetic and antiferromagnetic phases, and are insulators. The pure antiferromagnetic phase (as expected and observed in bulk materials with optimum oxygen stoichiometry) was not obtained in our experiments, even in the strongly reduced films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371693
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  • 5
    Electronic Resource
    Electronic Resource
    A simple tool to cut the protruding flange of photoresist formed in spin coating process for lithography technology (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 2205-2207 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A facile tool is suggested for cutting the protruding flange of photoresist (PR) along the edge of a small substrate surface, which is caused by the spin-coating process in lithography. When the dimension of the substrate reduces to a few millimeters, the edge problem of PR cannot be ignored. Since the PR's thickness along the edge of the sample is much larger than that in the middle, a traditional double exposure method does not work well. The cutter proposed here consists of a blade and a sample holder, which are installed in a base. By adjusting the blade at a suitable dip angle and pushing it to the flange of PR along the edge of substrate fixed by the sample holder, the flange of PR of small samples will be eliminated completely with great ease. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471350
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of external feedback on lasing in random media (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1213-1215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of external feedback on random laser action in ZnO polycrystalline thin films. Reinjection of light into scattering-formed cavities strongly influences modes, intensity, and threshold of random lasers. We have compared the effect of external feedback from the side of the film and that from the film surface. Our study opens the possibility of controlling random laser frequencies by external feedback. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124645
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  • 7
    Electronic Resource
    Electronic Resource
    Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3656-3658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122853
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  • 8
    Electronic Resource
    Electronic Resource
    Polymer waveguides useful over a very wide wavelength range from the ultraviolet to infrared (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2961-2963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have designed and fabricated polymer waveguides using the glassy polymers Cytop™ (a fluorinated polyether), PMMA C6 [poly(methyl methacrylate)], and Cyclotene™ 3022-35 (bisbenzocyclobutane). Since these materials exhibit excellent transparency over a wide wavelength range, and since the refractive index difference of Cytop™ and Cyclotene™ or Cytop™ and PMMA is greater than 0.19, both Cytop™/Cyclotene™/Cytop™ and Cytop™/PMMA/Cytop™ waveguide structures can be employed over a very wide wavelength range from the ultraviolet to the infrared. Efficient waveguiding is achieved for different light sources with 390, 633, 1064, 1310, and 1550 nm wavelengths. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323547
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  • 9
    Electronic Resource
    Electronic Resource
    Traveling wave electro-optic phase modulators based on intrinsically polar self-assembled chromophoric superlattices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 587-589 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Traveling-wave electro-optic modulators based on chromophoric self-assembled superlattices (SASs) possessing intrinsically polar microstructures have been designed and fabricated. Although the thickness of the SAS layer is only ∼150 nm, a π-phase shift is clearly observed. From the measured Vπ value, the effective electro-optic coefficient of the SAS film is determined to be ∼21.8 pm/V at an input wavelength of 1064 nm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389514
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  • 10
    Electronic Resource
    Electronic Resource
    Laser power and temperature dependence of the transient photoimpedance response of epitaxial YBa2Cu3O7−δ thin films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1531-1535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of laser power on the transient response of photoimpedance and the in situ sample temperature is studied for epitaxial YBa2Cu3O7−δ (YBCO) films at a wavelength of 810 nm using 100 fs laser pulses. The temperature dependences of the dc resistance and the amplitudes of the fast and slow photoresponse signals were measured simultaneously. For laser energy density of 20 μJ/cm2 per pulse (average power 22 mW), the average sample temperature is found to increase by about 1 K for 300 nm thick YBCO film with 0.5 mm thick LaAlO3 substrate as shown by the shift of resistance versus temperature curves. Calculations of time constant show that heat diffusion in LaAlO3 is the bottleneck for heat escape which causes the observed increase of the sample temperature. The amplitudes of both slow and fast signals show a peak in the temperature dependence curves near the superconducting transition temperature; and the peak temperature decreases, while the peak amplitude increases with laser power. At 82 K, the laser power dependence of the fast signal amplitude showed nonlinear behavior above 22 mW. These data were analyzed in terms of the kinetic inductance model and bolometric mechanism for the fast and slow signals, respectively. The temperature variation owing to laser pulse has been taken into consideration in this analysis. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366862
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