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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 14 (1975), S. 789-795 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 50 (1978), S. 2090-2096 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Applied mechanics and materials Vol. 3-4 (Aug. 2006), p. 117-124 
    ISSN: 1662-7482
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Suitable testing arrangements are made for assessing the strength of welded T-joint specimens and providing input for the validation of finite element simulations of their behaviour under load. Material characterisation across the various weld areas is carried out through tensile and hardness tests as well as standard metallographic procedures for examining the microstructure. Strain is measured at critical locations identified through initial FEM analysis. Failure mechanisms are monitored, failure loads recorded and linked to the joint material and geometric characteristics. The consistency of FEM predictions with these measurements and observations provide a reasonable degree of confidence that the developed model can yield reliable stress and strain distributions for failure analysis
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1409-1412 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A pressure vessel for neutron diffraction of liquids up to 20 kbar is described. It was made of one or two aluminum-alloy cylinders, having ultimate strengths of ∼6.5 kbar, that were supported radially by three steel supporting rings, which left two 6-mm-wide gaps for the passage of neutrons. The cylinders were supported longitudinally by a force of 300 tonnes applied to the ends of the vessel by a hydraulic press. The experimental fluid was pressurized in another vessel and piped into the diffraction vessel.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 190 (1978), S. 699-704 
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2090-2092 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced incorporation of Si is observed in the metalorganic chemical vapor deposition of homoepitaxial GaAs layers, grown in the presence of Si substrates placed adjacent to the GaAs substrates in the reactor. The electron concentrations of the GaAs layers are a function of the proximity to the Si substrates and the growth temperature, and do not appear to depend on the location of the Si substrates relative to the flow direction of the carrier gases and the type of reactor used for the growth, i.e., horizontal or vertical. Reduction in electron concentrations is observed when Si substrates are covered with passivating layers of either SiO2 or Si3N4. These results provide evidence of a gas phase reaction and transport of Si to the growing GaAs layers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1665-1667 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (11.4 nm) gate quality silicon dioxide films were subjected to high-temperature (850–1150 °C) rapid thermal nitridation cycles in ultrapure ammonia. Secondary-ion mass spectroscopy and neutron depth profiling results indicate a significant level of nitrogen diffusion into the silicon substrate. After stripping the dielectric layers, Schottky diode studies were performed using an electrolyte-based technique. We found, for the first time, the formation of nitridation-induced ultrathin (less than 60 nm) n-type layers at the top surface of nominally p-type silicon substrates used in the study. A nitrogen-oxygen donor complex formation mechanism is invoked to explain the presence of the ultrathin n-type layers.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1674-1676 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism is proposed for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1139-1141 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 A(ring) TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 A(ring) oxides to 5 V. This made the 230 A(ring) TSC oxide approximately equivalent to a 60 A(ring) normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 A(ring) normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 A(ring) and 60 A(ring) normal oxides.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Clinical & experimental allergy 33 (2003), S. 0 
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background Asthmatic inflammation is mediated by a network of cytokines, chemokines and adhesion molecules. Corticosteroids are the only effective agents available to control asthmatic inflammation. We investigated the effect of high-dose montelukast (MK), a selective cysteinyl leukotriene receptor 1 antagonist, on mediators of airway inflammation.Objective The aim of this study was to determine the effect of a 3-day course of high-dose MK on mediators of airway inflammation induced by a single allergen challenge in sensitized mice.Methods Ovalbumin (OVA)-sensitized BALB/c mice were treated with 25 mg/kg of MK or saline intravenously for 3 days. On the third day, a single inhalation challenge with OVA was given. Cellular infiltration was assessed in the bronchoalveolar lavage (BAL) and in the lung. Expression of IL-4, IL-5, IL-13 and eotaxin in the BAL, and the lung was determined. Serum IL-5 and total IgE was measured. IL-5 and eotaxin mRNA expression in the lung was determined. Finally, eotaxin and VACM-1 expression in the lung was assessed by immunohistochemistry.Results MK reduced the number of eosinophils in the BAL by 〉 90%. There was also significant reduction in IL-5 in the BAL, lung and the serum, and IL-5 mRNA expression in the lung. IL-4 level in the lung and BAL, and IL-13 level in the lung also significantly decreased. Serum IgE level and lung VCAM-1 expression was also significantly lower in treated animals, but eotaxin protein and mRNA expression in the lung remained unchanged.Conclusion MK exerts its anti-inflammatory effect through the suppression of T helper type-2 (Th2) cytokines. The use of high-dose MK as an anti-inflammatory agent in acute asthma should be further explored.
    Type of Medium: Electronic Resource
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