Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2090-2092 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced incorporation of Si is observed in the metalorganic chemical vapor deposition of homoepitaxial GaAs layers, grown in the presence of Si substrates placed adjacent to the GaAs substrates in the reactor. The electron concentrations of the GaAs layers are a function of the proximity to the Si substrates and the growth temperature, and do not appear to depend on the location of the Si substrates relative to the flow direction of the carrier gases and the type of reactor used for the growth, i.e., horizontal or vertical. Reduction in electron concentrations is observed when Si substrates are covered with passivating layers of either SiO2 or Si3N4. These results provide evidence of a gas phase reaction and transport of Si to the growing GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102092
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Nitridation-induced surface donor layer in silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1665-1667 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (11.4 nm) gate quality silicon dioxide films were subjected to high-temperature (850–1150 °C) rapid thermal nitridation cycles in ultrapure ammonia. Secondary-ion mass spectroscopy and neutron depth profiling results indicate a significant level of nitrogen diffusion into the silicon substrate. After stripping the dielectric layers, Schottky diode studies were performed using an electrolyte-based technique. We found, for the first time, the formation of nitridation-induced ultrathin (less than 60 nm) n-type layers at the top surface of nominally p-type silicon substrates used in the study. A nitrogen-oxygen donor complex formation mechanism is invoked to explain the presence of the ultrathin n-type layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102230
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    New mechanism for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1674-1676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism is proposed for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102232
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Oxides grown on textured single-crystal silicon for enhanced conduction (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1139-1141 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 A(ring) TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 A(ring) oxides to 5 V. This made the 230 A(ring) TSC oxide approximately equivalent to a 60 A(ring) normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 A(ring) normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 A(ring) and 60 A(ring) normal oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99668
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained-layer superlattices on heteroepitaxial GaAs/Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5115-5118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study, investigating the effects of strained-layer superlattices (SLSs) on threading dislocations present in GaAs/Si heteroepitaxial layers, was conducted. Transmission electron microscope contrast analysis was performed on ∼1% lattice-mismatched GaAs0.72P0.28/GaAs SLSs grown on GaAs/Si substrates.Threading dislocations were found to have Burgers vectors inclined to the GaAs/Si interface. Individual strained layers ranging in thickness from 100 to 250 A(ring) were observed to have negligible effect on dislocation bending. Instead, dislocation bending occurred primarily at the first and last interfaces of the SLS packets. Similarly, effective dislocation bending was observed using 1000 A(ring) layers. Threading dislocation density close to the GaAs/Si heterointerface was found to depend on the SLS packet proximity to the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347049
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si system (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2441-2446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heteroepitaxial growth of GaAs on Si substrates at 700 °C using AlxGa1−xP buffer layers grown at 900 °C by metalorganic chemical vapor deposition is studied using transmission electron microscopy. This GaAs/AlxGa1−xP/Si system is unique in that it allows one to study separately the influence of lattice-mismatch (GaAs/AlxGa1−xP) and polar/nonpolar (AlxGa1−xP/Si) effects on the heteroepitaxial growth of compound semiconductors. Island-type nucleation is observed for both effects acting independently, though three-dimensional growth due to the polar/nonpolar effect (AlxGa1−xP/Si) can be suppressed by increasing the Al content (x〉0.2) of the AlxGa1−xP layers. The nucleation of the GaAs appears to be modified by the nature of the AlxGa1−xP buffer layers, i.e., whether they are in the form of islands or planar layers. Single-crystal, 3-μm-thick layers of GaAs can be grown directly at 700 °C on the AlxGa1−xP buffer layers without resorting to a two-step technique. This result demonstrates that purely lattice-mismatch or polar/nonpolar effects cannot disrupt the crystallinity of the compound semiconductor layer. The surface morphology as well as the nature of defects generated in the 3-μm-thick GaAs films can be correlated to the nucleation mode of the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345490
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2669-2671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown an undoped GaAs layer with a low electron concentration on Si by metalorganic chemical vapor desposition (MOCVD). The back and side edges of the Si substrate were covered with a Si3N4/SiO2 stacked layer to suppress Si incorporation into GaAs by the gas phase transport mechanism during the MOCVD growth. A 3-μm-thick undoped GaAs layer with an electron concentration of 3×1014 cm−3, as low as the electron concentration of a GaAs layer grown on a GaAs substrate, was grown on the Si substrate even at 750 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103796
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...