Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 1139-1141
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 A(ring) TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 A(ring) oxides to 5 V. This made the 230 A(ring) TSC oxide approximately equivalent to a 60 A(ring) normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 A(ring) normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 A(ring) and 60 A(ring) normal oxides.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99668
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