Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Band alignment in GaxIn1−xP/InP heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 273-275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report low temperature optical absorption measurements on GaxIn1−xP/InP (x〈0.2) multiple quantum wells and strained-layer superlattices. The spectra show several well-defined peaks whose positions can be fitted within an envelope-function formalism including strain effects. We deduce conduction band offsets between the larger gap ternary and smaller gap binary materials ranging from 30 to 50 meV. Since these values are intermediate between the strain-induced shifts for the light- and heavy-hole valence bands, the electrons and heavy holes are localized in the InP layers (type I system), whereas the light holes have their quantum wells in the GaInP layers (type II system).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111178
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Misfit strain, relaxation, and band-gap shift in GaxIn1−xP/InP epitaxial layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3024-3029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed investigation of the structural and optoelectronic properties of thick GaInP epilayers on sulfur-doped InP substrates is reported. Significant variations of the optical absorption and photoluminescence transition energies from light- and heavy-hole states are observed as a function of the epilayer composition as well as of the degree of relaxation of the misfit strain. High-resolution x-ray measurements were used to determine the Ga concentrations and the strains and indicate significant anisotropic relaxation in several films. Even small relaxations result in a significant increase in the optical linewidths and a rapid drop in the transition intensities. A model with no free parameters based on the strain Hamiltonian of Pikus and Bir provides excellent agreement with the transition energies and serves to identify unambiguously the transitions observed in the optical spectra. Within this model, isotropic in-plane relaxation produces a shift of both light- and heavy-hole energies whereas anisotropic in-plane relaxation contributes only negligibly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356147
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5921-5926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of InAsP/InP strained multiple quantum wells have been experimentally determined in the temperature range 7–300 K. In order to understand the temperature behavior of the photoluminescence, a theoretical calculation is presented that takes into account the temperature-induced variations in band gap, carrier effective mass, biaxial strain, and exciton binding energy. The results show that the energy of the transition E1H between the n=1 electron subband and the n=1 heavy-hole subband changes as a function of temperature, and depends mainly on the evolution of the strained band gap of the InAsP layers. This is because in the temperature range 7–300 K the variations of the electron subband energy and the exciton binding energy are much less than those of the strained band gap, while the variation of the heavy-hole subband energy can be neglected. These results also explain why, for a lattice-matched quantum well, the variation of exciton peak energies with temperature follows that of the forbidden energy gap of the bulk material in the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358481
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The effect of molecular weight and crystallite structure on yielding in ethylene copolymers (1997)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Physics 35 (1997), S. 213-223 
    Details
    ISSN: 0887-6266
    Keywords: stress-strain ; yield ; crystallite ; ethylene copolymer ; superstructure ; lamellae ; Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Nominal stress-strain curves of a series of random ethylene-hexene copolymers having narrow composition and most probable molecular weight distributions were investigated. A series of such molecular weight copolymers with a constant concentration of branches were crystallized under a variety of conditions. In each molecular weight series the level of crystallinity was approximately constant. Particular attention was focused on the yield region and the nature of the yielding process. It was found, quite surprisingly, that the yield stress was not solely dependent on the crystallinity level. Moreover, the shape of the force-elongation curve in the yield region was very dependent on the molecular weight and the crystallization mode. These changes in yielding correlated quite well with the overall crystallite structure that was characterized by thin section transmission electron microscopy. The orthorhombic unit cell of polyethylene was maintained in all the samples despite the changes that occurred in the overall crystallite structure. © 1997 John Wiley & Sons, Inc.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...