Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    E"1-gap resonant enhancement of the Raman scattering from highly strained InAs/InP short-period superlattices
    Amsterdam : Elsevier
    Superlattices and Microstructures 15 (1994), S. 391 
    Details
    ISSN: 0749-6036
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/spmi.1994.1076
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Band alignment in GaxIn1−xP/InP heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 273-275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report low temperature optical absorption measurements on GaxIn1−xP/InP (x〈0.2) multiple quantum wells and strained-layer superlattices. The spectra show several well-defined peaks whose positions can be fitted within an envelope-function formalism including strain effects. We deduce conduction band offsets between the larger gap ternary and smaller gap binary materials ranging from 30 to 50 meV. Since these values are intermediate between the strain-induced shifts for the light- and heavy-hole valence bands, the electrons and heavy holes are localized in the InP layers (type I system), whereas the light holes have their quantum wells in the GaInP layers (type II system).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111178
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−y lattice matched to InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2633-2639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature photoluminescence measurements of GaxIn1−xAsyP1−y alloys nearly lattice matched to InP to study the line broadening of the observed band to band and near band gap transitions in these materials were performed. We find that the dominant broadening mechanism is alloy broadening that originates from the spatial fluctuations of the band gap energy due to random anion and cation distribution. A model that assumes that occupation of the group-III sites by Ga and In atoms and of the group-V sites by As and P atoms occurs randomly, is fitted to the photoluminescence spectra of our samples. This provides an excellent description of the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356239
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Misfit strain, relaxation, and band-gap shift in GaxIn1−xP/InP epitaxial layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3024-3029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed investigation of the structural and optoelectronic properties of thick GaInP epilayers on sulfur-doped InP substrates is reported. Significant variations of the optical absorption and photoluminescence transition energies from light- and heavy-hole states are observed as a function of the epilayer composition as well as of the degree of relaxation of the misfit strain. High-resolution x-ray measurements were used to determine the Ga concentrations and the strains and indicate significant anisotropic relaxation in several films. Even small relaxations result in a significant increase in the optical linewidths and a rapid drop in the transition intensities. A model with no free parameters based on the strain Hamiltonian of Pikus and Bir provides excellent agreement with the transition energies and serves to identify unambiguously the transitions observed in the optical spectra. Within this model, isotropic in-plane relaxation produces a shift of both light- and heavy-hole energies whereas anisotropic in-plane relaxation contributes only negligibly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356147
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Doping and residual impurities in GaAs layers grown by close-spaced vapor transport (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1288-1296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The close-spaced vapor transport (CSVT) technique is used to grow GaAs epitaxial layers from various n- or p-type doped GaAs sources. The transport agent is H2O with PH2O = 4.58 Torr. n-type layers can be grown with Te- or Ge-doped GaAs sources. The transport coefficients of both dopants (ratio of the electrically active dopant concentration in the layer to the electrically active dopant concentration in the source) is 100% for Te or Ge, in the substrate temperature range comprised between 750 and 850 °C. p-type layers are obtained with Zn-doped GaAs sources. The transport coefficient of Zn is about 1% and is also independent of the substrate temperature. The transport coefficients and their independence on temperature are in agreement with a mass-transport controlled model based on the hypothesis that the transport reactions of GaAs and the doping impurities are in equilibrium at the source and substrate temperatures. Si-doped GaAs cannot be used as a source to obtain conductive n-type layers. When undoped semi-insulating (SI)-GaAs wafers are used as sources in CSVT, n-type layers are obtained. They are characterized by ND−NA=9×1015–3×1016 cm−3 and μ300K=3000–4000 cm2 V−1 s−1, independent of the temperature, in the temperature range investigated. Glow discharge mass spectroscopy analyses performed on a source and on a layer indicate that C, O, Si, and S are the major residual impurities in the GaAs layer. All these impurities have their origin in the technique (reactor, transport agent). Ge is also present in the layers, as indicated by photoluminescence. It is a minor impurity. Its origin is probably the SI-GaAs source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353246
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Structural and optical characterization of monolayer interfaces in Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2640-2648 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a detailed structural and optical characterization of Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy using a well-defined sequence of growth interruption times between successive layers. These growth interruption times result in the formation of interfacial layers which drastically alter the structural properties of Ga0.47In0.53As/InP multiple quantum wells. An analysis of double-crystal x-ray diffraction data reveals that exposure of InP to arsine for 2 s is sufficient to create approximately 3 monolayers of InAs0.55P0.45 ternary under biaxial compressive strain at the InP/Ga047In0.53As interface. Moreover, exposure of Ga0.47In0.53As to phosphine for 2 s results in the formation of approximately 2 monolayers of Ga0.48In0.52As0.21P0.79 quaternary under biaxial tensile strain at the Ga0.47In0.53As/InP interface. We find that long exposures to hydrides (over 5 s) rather than short ones give rise to interfacial layers with less compositional disorder and/or thickness fluctuation. Moreover, photoluminescence and absorption spectroscopy data reveal the negligible effect of InAsxP1−x and GaxIn1−xAsyP1−y interfacial layers on the emission and optical absorption properties of Ga0.47In0.53As/InP multiple quantum wells with sufficiently thick Ga0.47In0.53As layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361134
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Optical properties of submonolayer InAs/InP quantum dots on vicinal surfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6789-6792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of the misorientation (001) InP substrates on the optical properties of submonolayers of InAs in InP grown by metalorganic chemical vapor deposition. InAs submonolayers were systematically studied using low temperature photoluminescence (PL), photoluminescence excitation spectroscopy and temperature-dependent, excitation density PL. For submonolayer samples with oriented substrates, the observed PL linewidths and energies are satisfactorily explained within a two-dimensional (2D) quantum well picture. The formation of InAs isolated quantum dots which is found in the submonolayer samples with misoriented substrates towards (110) orientations, however, results in 0D exciton localization. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371728
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Growth and structural properties of epitaxial GaxIn1−xP on InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1737-1743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of heteroepitaxial GaxIn1−xP on InP for 0〈x〈0.25 has been carried out by low-pressure metalorganic chemical vapor deposition and characterized by high-resolution x-ray diffraction and low-temperature photoluminescence measurements. The x-ray data indicate that the epilayers are under biaxial tensile strain and that, for samples with x〈0.05, the lattice mismatch is accommodated almost completely by tetragonal distortions. From photoluminescence measurements, the energy band gap is found to vary monotonically with the Ga concentration; it also shifts linearly with the elastic strain in the layer. The calculated value of 0.99×104 meV per unit strain is in good agreement with that predicted from elasticity theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351206
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Exciton resonances in ultrathin InAs/InP quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed detailed optical measurements of ultrathin InAs/InP quantum wells grown by metal organic vapor phase epitaxy. Photoluminescence excitation spectra reveal the excitonic resonances associated with two- and three-monolayer thick InAs layers while polarization-dependent measurements clearly show the heavy- or light-hole nature of the resonances. These resonances, together with their emission bands, can be detected on the same sample, indicating the presence of well defined regions of different InAs layer thickness. We find that the energy position of the excitonic resonances cannot be reproduced by effective mass calculations based on the envelope function approximation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123577
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Localization of excitons by potential fluctuations and its effect on the Stokes shift in InGaP/InP quantum confined heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5639-5642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present investigations of the temperature evolution of the photoluminescence (PL) and optical absorption spectra of a series of tensile-strained InGaP/InP multiple quantum wells (MQW) samples. As in previous work on compressive-strained InAsP/InP MQW, the results support the assignment of the low temperature PL transitions to recombination from excitonic band-tail states. The energy of such transition is redshifted with respect to the free exciton recombination energy. This results in a large apparent energy difference between PL and optical absorption peaks which is, at 6 K, about 5 meV in the coherently strained samples and less than 1 meV in the partially relaxed ones. The analysis of the low temperature PL line shape which we present enables the determination of the excitonic band-gap energy for all the samples. The difference between the energy of the optical absorption transition and the excitonic band-gap energy thus determined gives a measure of the Stokes shift arising from thermalization effects alone. The values of the Stokes shift thus obtained are in better agreement with the sharpness of the optical absorption transitions which indicate samples of high crystalline quality.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368822
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...