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  • 1
    Electronic Resource
    Electronic Resource
    Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−y lattice matched to InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2633-2639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature photoluminescence measurements of GaxIn1−xAsyP1−y alloys nearly lattice matched to InP to study the line broadening of the observed band to band and near band gap transitions in these materials were performed. We find that the dominant broadening mechanism is alloy broadening that originates from the spatial fluctuations of the band gap energy due to random anion and cation distribution. A model that assumes that occupation of the group-III sites by Ga and In atoms and of the group-V sites by As and P atoms occurs randomly, is fitted to the photoluminescence spectra of our samples. This provides an excellent description of the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356239
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  • 2
    Electronic Resource
    Electronic Resource
    Insensitivity of YBa2Cu3O7−x to ionizing radiation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5057-5060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-temperature superconductor YBa2Cu3O7−x has been irradiated in a transmission electron microscope to investigate the effect of high doses of ionizing energy on the microstructure of this material. Electrons of energies low enough to avoid knock-on displacement damage (80 and 100 keV) were used to achieve radiation doses of 1×1012 Gy at 115 K and 2×1013 Gy at room temperature. Using the criteria of twin fading and formation of extended defects, no microstructural damage was observed. These results indicate that YBa2Cu3O7−x is extremely resistant to damage by radiolytic processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343426
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  • 3
    Electronic Resource
    Electronic Resource
    Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4843-4852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dislocation densities, surface morphology, and strain of Ga1−xInxAs/GaAs epitaxial interfaces as a function of indium composition and layer thickness have been investigated by transmission electron microscopy, medium energy ion blocking, and double-crystal x-ray diffractometry. The electron microscopy shows that in the thinnest dislocated films (90 and 160 nm, x=0.07) 60° α dislocations form first in one 〈110〉 direction at the interface. Surprisingly, however, an asymmetry in residual layer strain is not detected in these samples, suggesting that the dislocations have the same Burgers vector or are evenly distributed between two Burgers vectors. Orthogonal arrays of dislocations are observed in films thicker than 300 nm (60° and edge-type, x=0.07). In this case, dislocation densities in each 〈110〉 direction are equal to within experimental error while an asymmetry in in-plane strain is measured (18% and 30% for x=0.07, 300, and 580 nm thick, respectively). An unequal distribution of Burgers vectors of 60° or edge-type dislocations is considered responsible for the strain asymmetry in these thicker samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341232
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  • 4
    Electronic Resource
    Electronic Resource
    Donor-acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 674-676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of InP by metalorganic chemical vapor deposition, simultaneously doped with both a donor (Si) and an acceptor (Zn) species during the growth, has been carried out. The incorporation of Si is not affected by the presence of Zn, but the Zn incorporation is substantially enhanced by the presence of Si. These results are consistent with the formation of donor-acceptor pairs, which has been suggested earlier to explain Zn diffusion profiles in Si-doped InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105361
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  • 5
    Electronic Resource
    Electronic Resource
    Comparison between CoSi"2 and TiSi"2 as dopant source for shallow silicided junction formation
    Amsterdam : Elsevier
    Applied Surface Science 38 (1989), S. 430-440 
    Details
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-4332(89)90564-3
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  • 6
    Electronic Resource
    Electronic Resource
    Materials and devices toward three-dimensional integration
    Amsterdam : Elsevier
    Microelectronic Engineering 8 (1988), S. 235-253 
    Details
    ISSN: 0167-9317
    Keywords: LDMOS ; Recrystallization ZMR ; electron beam ; laser ; smart-power ; three-dimensional integration
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-9317(88)90019-6
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  • 7
    Electronic Resource
    Electronic Resource
    Immunoglobulin-degrading enzymes in localized juvenile periodontitis (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of periodontal research 27 (1992), S. 0 
    Details
    ISSN: 1600-0765
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Previous reports have indicated the association of periodontal diseases with elevated levels of serum immunoglobulin G (IgG) antibodies to periodontally relevant bacteria. Recent results from this laboratory suggest that enzymes proteolytic for immunoglobulins are important virulence factors of several periodontal bacteria. Specifically, enzymes from Porphyromonas (Bacteroides) gingivalis culture supernatant fluid (SF) cleaved human IgG (4 subclasses), IgAl and IgA2, IgM, IgD and IgE. Proteolytic enzymes from Actinobacillus actinomycetemcomitans culture SF cleaved IgG, IgA and IgM. An enriched Ig proteolytic preparation from Capnocytophaga ochracea culture SF was shown to extensively cleave all 4 subclasses of human IgG. Extensive degradation of IgG and IgA in crevicular fluid samples on SDS-PAGE from periodontal disease sites of localized juvenile periodontitis (LJP) patients in comparison to little degradation in healthy sites indicated the potential role the proteolytic enzymes from periodontopathogenic bacteria may play in situ. Treatment of IgG with P. gingivalis, A. actinomycetemcomitans and C. ochracea SF resulted in similar patterns of degradation. LJP patients had significantly higher levels of IgG and IgA proteolytic activity in whole saliva than age, sex, and race-matched periodontal disease-free controls. However, not all of the proteolytic activity could be ascribed to Bacteriol proteases since neutrophils are also present in large numbers at diseased sites. Using similar techniques, lysates of neutrophils from healthy controls cleaved IgG, IgA and IgM. The observation of enhanced Ig cleavage activity in crevicular fluid and saliva in LJP patients suggest a role for Ig proteolytic enzymes in LJP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0765.1992.tb01666.x
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  • 8
    Electronic Resource
    Electronic Resource
    Precipitation and ordering in calcia- and yttria-stabilized zirconia (1980)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 13 (1980), S. 375-379 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Single crystals of ZrO2–15 mol % CaO and ZrO2–9 mol % Y2O3, annealed for either 400 h at 1273 K or 2.5 h at 1673 K and then quenched, were examined by electron diffraction and dark-field transmission electron microscopy. The thermal treatments duplicated those of Faber, Mueller & Cooper [Phys. Rev. B (1978), 17, 4884–4888], who used elastic neutron scattering to investigate fluorite-forbidden reflections which arise from what previous authors have called the `ordered' structure. The present results show that the extra reflections are due to precipitation of tetragonal ZrO2 in both systems. Imaging with the diffuse-scattered intensity also present reveals small domains, presumably associated with oxygen-vacancy ordering, in the cubic solid-solution matrix. The diffuse intensity is observed whether or not tetragonal ZrO2 precipitates are present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889880012332
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  • 9
    Electronic Resource
    Electronic Resource
    Direct observation of alkali metal colloids in alkali halide crystals (1974)
    [s.l.] : Nature Publishing Group
    Nature 252 (1974), S. 383-385 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Increasingly sophisticated techniques have been applied to the study of these colloidal centres, for example, ultramicroscopy11, diffuse X-ray scattering12,13, NMR14,15, EPR16?18, electrical conductivity19 and surface replication20?28. Despite 70 years of investigation, their existence has still ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/252383b0
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  • 10
    Electronic Resource
    Electronic Resource
    18O/SIMS characterization of the growth mechanism of doped and undoped α-Al2O3 (1993)
    Springer
    Oxidation of metals 39 (1993), S. 167-195 
    Details
    ISSN: 1573-4889
    Keywords: α-Al2O3 ; 18O/SIMS ; reactive element effect ; FeCrAl ; β-NiAl
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Sequential oxidation experiments at 1200°C and 1500°C using16O and 〉95%18O-enriched environments were conducted on undoped and Y- and Zr-doped β-NiAl and FeCrAl alloys. After oxidation, samples were analyzed by SIMS sputter depth profiling. At 1200°C, a clear pattern was established where the undoped α-Al2O3 was found to grow by the simultaneous transport of both Al and O. Zr-doped α-Al2O3 was found to grow mainly by the inward transport of oxygen. The profiles in all cases indicate O diffusion primarily by shortcircuit pathways. Results at 1500°C (only on β-NiAl) indicated a similar behavior but were less conclusive. Y and Zr were found to segregate to the oxide grain boundaries at 1200°C and 1500°C. The segregation of these dopants is believed to impede the cation transport in the α-Al2O3 scale and thereby change the oxidation mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00665610
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