Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 1737-1743
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth of heteroepitaxial GaxIn1−xP on InP for 0〈x〈0.25 has been carried out by low-pressure metalorganic chemical vapor deposition and characterized by high-resolution x-ray diffraction and low-temperature photoluminescence measurements. The x-ray data indicate that the epilayers are under biaxial tensile strain and that, for samples with x〈0.05, the lattice mismatch is accommodated almost completely by tetragonal distortions. From photoluminescence measurements, the energy band gap is found to vary monotonically with the Ga concentration; it also shifts linearly with the elastic strain in the layer. The calculated value of 0.99×104 meV per unit strain is in good agreement with that predicted from elasticity theory.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351206
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