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  • PACS. 61.14.Hg Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) - 68.35.Bs Surface structure and topography  (1)
  • PACS. 81.65.Mq Oxidation - 81.05.Ea III-V semiconductors - 82.65.My Chemisorption  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Explanation of multiplet spots in low-energy electron diffraction patterns of clean GaN surfaces (1999)
    Springer
    The European physical journal 7 (1999), S. 1-4 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 61.14.Hg Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) - 68.35.Bs Surface structure and topography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Clean, ordered, and stoichiometric GaN surfaces are obtained after exposure to a Ga-flux followed by annealing in ultrahigh vacuum (UHV), after desorption of a Ga layer deposited at room-temperature or after nitrogen ion-bombardment and annealing in UHV. Samples annealed at temperatures above approximately display low-energy electron diffraction patterns. As a function of electron energy, the normal-order spots split into circular sextets. These multiplet rings periodically expand and coalesce. This observation is explained by oppositely oriented, regular step arrays in the [1000]-, [0100]- and [0010]-directions on the GaN surfaces. Quantitative analysis of the data gives terrace widths of Å and step heights of Å. The observations suggest faceting or the “development” of growth spirals with steps heights of two Ga-N bilayers by thermal etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050583
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation of GaN{0001}-1 1 surfaces at room temperature (1999)
    Springer
    The European physical journal 9 (1999), S. 315-321 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 81.65.Mq Oxidation - 81.05.Ea III-V semiconductors - 82.65.My Chemisorption
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: The interaction of unexcited oxygen molecules with clean GaN{0001}-1 1 surfaces was investigated using X-ray photoemission spectroscopy (XPS), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED). Clean surfaces were prepared by a HF dip followed either by desorption of Ga films deposited at room temperature or by nitrogen-ion bombardment and annealing. During exposures in the range from 0.3 up to 1015 L-O2 any excitations of the oxygen were avoided. Oxygen coverages determined from the XPS and the AES data differ by a factor of two. The larger XPS-derived coverages are considered to be more reliable since the AES signals decayed during data recording. The oxygen uptake takes place in two consecutive stages. The first one is identified as dissociative chemisorption and the second one is tentatively attributed to field-assisted diffusion by the Mott-Cabrera mechanism. The dissociative chemisorption is characterized by an initial sticking coefficient of and a saturation coverage of monolayers that is reached after exposures of 103 L-O2. The second mechanism sets in at exposures to 108 L-O2 but reaches no saturation even with the largest doses applied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050771
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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