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  • PACS. 73.30.+y Surface double layers, Schottky barriers, and work functions - 73.40.Ei Rectification  (1)
  • PACS. 81.65.Mq Oxidation - 81.05.Ea III-V semiconductors - 82.65.My Chemisorption  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Influence of the interface structure on the barrier height of homogeneous Schottky contacts (1999)
    Springer
    The European physical journal 7 (1999), S. 457-466 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 73.30.+y Surface double layers, Schottky barriers, and work functions - 73.40.Ei Rectification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Unreconstructed interfaces may be prepared by evaporation of thick Pb films onto surfaces at room temperature. Current-voltage and capacitance-voltage characteristics of such Schottky contacts were measured in the temperature range between 140 and 300 K. The experimental data are analyzed by applying the thermionic-emission theory of inhomogeneous metal-semiconductor contacts as well as the “standard” thermionic-emission theory. From both methods the Schottky barrier height of laterally homogeneous contacts results as 0.724 eV. This value is by 74 meV larger than the previously observed barrier heights of laterally homogeneous interfaces. Similar differences were reported for unreconstructed and reconstructed Al- and contacts. The reduced barrier heights of all these interfaces are explained by the electric dipole associated with the stacking faults of reconstructions at surfaces and interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050634
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation of GaN{0001}-1 1 surfaces at room temperature (1999)
    Springer
    The European physical journal 9 (1999), S. 315-321 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 81.65.Mq Oxidation - 81.05.Ea III-V semiconductors - 82.65.My Chemisorption
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: The interaction of unexcited oxygen molecules with clean GaN{0001}-1 1 surfaces was investigated using X-ray photoemission spectroscopy (XPS), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED). Clean surfaces were prepared by a HF dip followed either by desorption of Ga films deposited at room temperature or by nitrogen-ion bombardment and annealing. During exposures in the range from 0.3 up to 1015 L-O2 any excitations of the oxygen were avoided. Oxygen coverages determined from the XPS and the AES data differ by a factor of two. The larger XPS-derived coverages are considered to be more reliable since the AES signals decayed during data recording. The oxygen uptake takes place in two consecutive stages. The first one is identified as dissociative chemisorption and the second one is tentatively attributed to field-assisted diffusion by the Mott-Cabrera mechanism. The dissociative chemisorption is characterized by an initial sticking coefficient of and a saturation coverage of monolayers that is reached after exposures of 103 L-O2. The second mechanism sets in at exposures to 108 L-O2 but reaches no saturation even with the largest doses applied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050771
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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