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  • 1
    Electronic Resource
    Electronic Resource
    Quantitative evaluation of AES-depth profiles of thin anodic oxide films (Ta2O5/Ta, Nb2O5/Nb) (1983)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 5 (1983), S. 210-216 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Thin films of anodically formed Ta2O5 and Nb2O5 on polycristalline Ta and Nb, respectively, are analysed with AES during sputtering with Ar+ ions at energies between 0.5 keV and 5 keV. A sputtering induced depletion of oxygen at the surface is observed in both oxides. The kinetics of this depletion and the steady-state composition at the surface of the samples are studied as a function of the primary ion energy. The results are interpreted using a modification of the model of Ho et al. (1976) for the preferential sputtering of alloys. The thickness of the transient layer increases non-linearly from 1.6 to 3.4 nm with increasing ion energy. Below 2 keV, the surface depletion of oxygen increases with decreasing ion energy and is constant above 2 keV up to 5 keV. The results are similar for both oxides. At 2 keV, the minimum measured width of the oxide/metal interface is 2 nm for Ta2O5/Ta and is about two times larger for Nb2O5/Nb. In both cases it increases with the square root of the ion energy and it is independent on the oxide layer thickness between 10 nm and 150 nm.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740050507
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  • 2
    Electronic Resource
    Electronic Resource
    Quantification of preferential sputtering and contamination overlayer effects in AES sputter profiling (1984)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 6 (1984), S. 78-81 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A model calculation is presented for the quantitative evaluation of AES sputtering profiles of thin layers in the case of preferential sputtering and a contamination overlayer. The model is based on the statistical contribution to depth resolution, the escape depth effect correction and the preferential sputtering model of Ho et al. (1976). Applications to measured AES sputtering profiles of the anodic oxides Ta2O5 and Nb2O5 allow the determination of the thickness and the oxygen content of the contamination overlayer.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740060208
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  • 3
    Electronic Resource
    Electronic Resource
    Depth resolution factor of a static gaussian ion beam (1981)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 3 (1981), S. 235-239 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The dependence of the depth resolution on the contribution of a Gaussian crater shape and the finite width of a Gaussian excitation beam (and/or Gaussian acceptance function) is considered. The results show that for Auger electron spectroscopy depth profiling, the contribution of the beam shapes to the depth resolution can, in most cases, be neglected. With X-ray photoelectron spectroscopy and secondary ion mass spectroscopy depth profiling, care has to be taken to obtain a well resolved depth profile.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740030602
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  • 4
    Electronic Resource
    Electronic Resource
    Quantitative AES depth profiling of very thin overlayers (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 8 (1986), S. 147-157 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A model calculation is proposed which quantitatively evaluates measured AES sputtering profiles of very thin overlayers in terms of the original elemental depth distribution. The model is based on the sequential layer sputtering model, including the escape depth of the Auger electrons. A proposal for the incorporation of a site dependent sputtering yield and of preferential sputtering effects is presented and the limitations and capabilities are discussed. Applications to experimental data are shown for oxide films on tantalum, for an oxidefilm on a NiCr20 alloy and for a passive film on FeCr18Ni9.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740080403
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  • 5
    Electronic Resource
    Electronic Resource
    RBS and AES depth profiles of Pd deposited on Si after annealing at different temperatures (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 334-338 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Palladium silicide films were obtained after annealing thermally evaporated Pd layers on 〈111〉 p-type Si substrates. The silicide layers formed at different temperatures were characterized by Rutherford backscattering (RBS) and Auger electron spectroscopy (AES). A quantification of the AES depth profiles was made by comparing the profiles with the RBS results. The sputtering time scale was converted into a depth scale using the values of the sputtering yields calculated from the RBS thickness and the AES sputter times. The transformation of the measured Auger intensities into concentration allowed a quantitative study of preferential sputtering in Pd2Si, taking into account the composition given by RBS. Finally we estimated the depth resolution of the AES profiles by comparing the width of the interfaces obtained from both techniques.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740120603
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  • 6
    Electronic Resource
    Electronic Resource
    An AES study of the room-temperature oxidation of TaSix after bombardment with Ar+ ions of different energiesPaper presented at ECASIA 89, Antibes, France, 23-27 October 1989. (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 440-446 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Tantalum silicide films of ∼200 nm thick and composition TaSi2 were obtained by co-sputtering in a Varian 3120 S-gun magnetron system. The films were then introduced in an AES spectrometer and bombarded with Ar+ ions of different energies in order to obtain surfaces of different compositions as a consequence of preferential sputtering effects and their dependence on the energy of the primary ions. Lowering the energy of the Ar+ ions resulted in surfaces very rich in tantalum. The interactions of these surfaces with oxygen at low pressures (10-8-10-5 Torr) and at room temperature then have been studied comparatively by Auger electron spectroscopy. Reference experiments with pure Si and Ta allowed the comparison with those of the different silicide surfaces. It is found that the oxygen uptake depends on the Ta content so that the richer in Ta the surface is, the higher the O2 incorporation. Furthermore, the uptake rate at the different TaSix surfaces resembles better the measured rate for pure Ta than that observed for pure Si. It has been observed also that the oxidation of Si is enhanced over that of pure silicon in all the surfaces studied here. Besides, the enhancement depends on the tantalum content.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740150708
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  • 7
    Electronic Resource
    Electronic Resource
    An XPS study of the kinetics of dissolution of ZrO2 in α-Zr (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 535-539 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The dissolution of a 15 Å thick oxide layer into polycrystalline Zr at temperatures between 440 and 600 K and under non-oxidizing conditions has been studied by XPS. The thickness of the oxide layer as a function of the annealing time shows a parabolic dependence. It is then concluded that the rate of dissolution is controlled by diffusion into the Zr substrate of oxygen atoms, which generate at the interface by decomposition of the oxide. In addition, the effective oxygen diffusion coefficient in the 440-600 K temperature range has been determined as D = 4.42 × 10-6 exp(-99.7/RT) cm2 s-1, with the activation energy in kJ mol-1.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.7401601111
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  • 8
    Electronic Resource
    Electronic Resource
    Dielectric loss function of Si and SiO2 from quantitative analysis of REELS spectra (1993)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 20 (1993), S. 719-726 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A recently proposed model for quantitative analysis of reflection electron energy-loss spectra (REELS) has been applied to evaluate the dielectric loss function of Si and SiO2 in the 4-100 eV energy range, and to determine inelastic scattering properties for these materials for low-energy electrons (500-10000 eV). Appropriate trial energy-loss functions (i.e. Im{1/∊}) are used and the best loss function is found from the criterion that a satisfactory quantitative agreement is obtained between the simulated and experimental inelastic scattering cross-sections at several primary electron energies. The fact that the energy-loss functions determined in this work agree remarkably well with optical data gives some confidence in the applied procedure. In addition, the effective inelastic mean free paths of the electrons as a function of the primary energy and the path travelled inside the medium have also been determined in terms of the respective energy-loss functions.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740200817
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  • 9
    Electronic Resource
    Electronic Resource
    Interaction of oxygen with ZrN at room temperature: An XPS studyPaper presented at ECASIA 93, Catania, Sicily, 4-8 October 1993. (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 395-399 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Quantitative XPS has been used to characterize the interaction of oxygen with ZrN at room temperature. The results indicate that ZrN remains unaffected for oxygen exposures 〈104 L at oxygen pressures 〈10-7 Torr. However, higher oxygen exposures at higher pressures cause the formation of an oxynitride (ZrN0.5O0.5) and ZrO2. At 108 L saturation is reached, with the formation of an oxidized layer that is 17 Å thick formed by 5 Å of ZrO2 and an interface layer (12 Å thick) of average composition ZrN0.5O0.5. Analysis of the core levels and valence band of the oxynitride demonstrates its ionic character as well as its insulating properties in comparison with metallic ZrN.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740210612
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  • 10
    Electronic Resource
    Electronic Resource
    Quantitative analysis of REELS spectra of ZrO2: Determination of the dielectric loss function and inelastic mean free paths (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 124-128 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The dielectric loss function of ZrO2 over 0-80 eV has been determined from a quantitative analysis of reflection electron energy loss spectra (REELS) at different primary energies. From this, the inelastic electron mean free path for 200-2000 eV electrons in ZrO2 has been calculated. The inelastic mean free path (IMPF) is found to depend on the depth from which the electron is backscattered. For great depths, the IMFP approaches a constant value which is the same as that which would be obtained within a model that ignores the effects of the surface. The derived IMFP values have been compared to different formulae presented in the literature and the TPP2 formula due to Tanuma et al. is found to give the best agreement with the present results.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740220130
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