Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Buried word line planarization and roughness control for tunnel junction magnetic random access memory switching (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6382-6384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin dependent tunnel junctions were fabricated on top of buried word lines. This was achieved modifying an existent 1.2 μm complementary metal–oxide–semiconductor backend metalization process. The word lines are 0.2 μm thick and 4 μm wide. Roughness over the buried line was decreased to 0.2 nm (rms), performing a spin-on-glass local planarization step. Tunnel junctions with 9–13 Å plasma oxidized Al barriers were patterned on top of the word line with different aspect ratios from 3×2 μm2 to 7×1 μm2 areas. Magnetoresistance values reach over 20% for top free electrode configurations. In this inverted structure the magnetization of the free electrode can be fully reversed with the field from word line. The word line creates a field of 0.7 Oe per mA. Applying simultaneously two perpendicular fields reduces the threshold for magnetization switching. The fabricated structure can be used to assess the junction switching mechanism for tunnel junction magnetic random access memories. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372713
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Large tunneling magnetoresistance enhancement by thermal anneal (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3288-3290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin tunnel junctions with tunneling magnetoresistance of 36.5%±0.5%, resistance-area product of 35±6 kΩ×μm2, and junction area between 6 and 75 μm2 were fabricated. The barrier height is 2.5±0.3 eV and the barrier thickness is 7.7±0.3 Å. Large tunneling magnetoresistance (TMR) values are obtained by vacuum anneal (at temperatures from 100 to 240 °C for over 5 h) of junctions prepared with as-deposited TMR of 21%±1.7%, and an as-deposited resistance-area product of 25±6 kΩ×μm2. Two regimes occur during anneal. The first one occurs for anneals up to 200 °C where TMR and junction resistance increase, but the barrier parameters are unaltered. The second occurs above 200 °C, where TMR increases faster, together with an increase in barrier height. At 240 °C, TMR starts to decrease. Rutherford backscattering analysis indicates an asymmetry in the oxygen distribution in the as-deposited barrier. The oxygen distribution becomes homogeneous for anneals above 150 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122747
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Tunneling magnetoresistance and current distribution effect in spin-dependent tunnel junctions : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6694-6696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, spin-dependent tunnel junctions fabricated by shadow mask (junction area 0.25 mm2) and by lithography (junction area down to 9×2 μm2) were studied. The junctions have NiFe and CoFe electrodes and the insulating barrier Al2O3 is formed by depositing a 10–30 Å thick Al layer, followed by a 1–3 min plasma oxidation in an O2 atmosphere. The mm2-size junctions show tunneling magnetoresistances (TMR) of 10%–13.5% at room temperature (RT), with 50% decrease in TMR for a bias voltage of 220 mV. The junction resistances range from hundreds of Ω to tens of kΩ. The analysis of current distribution indicates that no geometrically enhanced magnetoresistance occurs in the cross-shaped mm2-size junctions when the measured junction resistance is five times larger than the electrode resistance over junction area. The μm2-size junctions show TMR of 17%–24% at RT, independent of the junction area, and have a resistance between 90 kΩ and 1 MΩ for the 9×2 μm2 size (resistance-area products of ∼3 MΩ×μm2). The μm2-size junctions show 50% decrease in TMR for a bias voltage of 430 mV, and high sensitivity (〉20%/Oe). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367719
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependence and annealing effects on spin dependent tunnel junctions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5258-5260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature and annealing effects on junctions with high (10–13 MΩ μm2) and low (25–30 kΩ μm2) resistance-area products were studied. Junction tunneling magnetoresistance (TMR) is almost unchanged and above 20% up to 200 °C. A sharp and reversible TMR decrease is observed between 200 and 220 °C and is due to the exchange loss in the pinning layer. Junction TMR increases from 22% to 26% in high resistance-area product samples (resistance decreases a factor of 2), and from 22% to 37% (resistance increases 30%) in low resistance-area product samples, upon anneal up to 200–230 °C. Rutherford backscattering (RBS) analysis of the oxygen distribution in as-deposited samples indicates oxygen asymmetry in the barrier. This asymmetry and asymmetry in barrier parameters, found in as-deposited samples, disappear after anneal at 200 °C. Two regimes for the TMR dependence on anneal are proposed. The first up to 200 °C, where TMR increases, as barrier is homogenized and polarization near the top electrode increases. The second, above 200 °C in low-resistance junctions, where TMR increase is related with barrier height increase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369959
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Vertical integration of a spin dependent tunnel junction with an amorphous Si diode (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3893-3895 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work demonstrates integration of magnetic tunneling junctions with hydrogenated amorphous silicon (a-Si:H) diodes. In the finished device 11.4% current change is measured when the junction free layer is switched in an external magnetic field, for 0.86 V applied to the junction-diode series. In the integrated device, the measured individual tunneling magnetoresistance signal is 25.3% at 7 mV bias, demonstrating junction robustness and process compatibility. The junction-diode series is necessary for bit selectivity in magnetic random access memories. Vertical growth of these devices may allow higher density architectures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124215
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Vanadate blocks cyclic AMP-induced Stimulation of sodium and water transport in amphibian epithelia (1979)
    [s.l.] : Nature Publishing Group
    Nature 279 (1979), S. 803-804 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The inhibition of sodium transport was mainly studied in frog skin, but similar results were obtained in toad bladder. Short circuit current (SCC) was taken as a measure of net sodium flux4'5. Addition of sodium metavanadate, NaVO3, with V in the +5 oxidised state, to the solution bathing the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/279803a0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Optical method for measuring water flow with automatic recording (1972)
    Springer
    Cellular and molecular life sciences 28 (1972), S. 1391-1393 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Résumé Une méthode optique d'enregistrement automatique de flux d'eau à travers des membranes biologiques et synthétiques est décrite. Le mouvement d'un ménisque à l'aide d'un dispositif photosensible, sans interférence avec le flux lui-même.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01965364
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Quercetin enhances water transport in toad bladder (1981)
    Springer
    Cellular and molecular life sciences 37 (1981), S. 742-744 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary A highly significant enhancement of the hydrosomotic actions both of vasopressin and of exogenous cAMP was seen in the presence of quercetin. The hypothesis is advanced that quercetin affects the intracellular coupling between Ca++ and cAMP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01967956
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Patterns of membrane organization in toad bladder epithelium: A freeze-fracture study (1975)
    Springer
    Cellular and molecular life sciences 31 (1975), S. 1335-1338 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Two cell-types of toad bladder epithelium show uncommon plasma membrane organization in freeze-fractured specimens. One type, the granular cell, contains a plasma membrane in which the A-face is poorly particulate luminally while the B-face discloses multiple large particles at this site. In contrast, the lateral and basal portions of the granular-cell membrane are typical in that more particles occupy the A-face than the B-face. In the other cell-type, which is mitochondriarich, the plasma membrane, luminally, laterally, and basally, contains rod-shaped and a few glubular particles in the A-face. We suggest that these two peculiar membrane organizations by considered in the localization of both vasopressin and aldosterone action in toad bladder.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01945814
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Effects of Ag+ on frog skin: Interactions with oxytocin, amiloride and ouabain (1977)
    Springer
    Cellular and molecular life sciences 33 (1977), S. 433-436 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Different biological effects of Ag+ (10−4 M) were found depending on its presence in the outer or the inner solution bathing the frog skin. A marked increase in the electrical conductance and an interference with the action of oxytocin and amiloride were found only when Ag+ was added to the outer solution. Results suggest that Ag+ affects several transport processes, in particular the permeability of the Na entry pathways.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01922195
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...