ISSN:
1573-1979
Schlagwort(e):
SOI material
;
unibond
;
low power
;
SOI volume production
;
CMOS-SOI
;
high resistivity
;
SOI roadmap
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
Notizen:
Abstract Building RF/microwave SOI-CMOS integrated circuits has significant speed and power advantages over circuits built on bulk materials. High quality SOI material exists today which will meet today's device requirements; on-going development efforts will improve the material available for subsequent device generations.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1023/A:1008346430921
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