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High Volume RF/Microwave SOI-CMOS Integrated Circuits (2000)

Auberton-Herve, A. J. ; Barge, T. ; Maleville, C. ; [et al.]

Springer

Analog integrated circuits and signal processing 25 (2000), S. 85-91

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ISSN: 1573-1979

Keywords: SOI material ; unibond ; low power ; SOI volume production ; CMOS-SOI ; high resistivity ; SOI roadmap

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology

Notes: Abstract Building RF/microwave SOI-CMOS integrated circuits has significant speed and power advantages over circuits built on bulk materials. High quality SOI material exists today which will meet today's device requirements; on-going development efforts will improve the material available for subsequent device generations.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1023/A:1008346430921

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