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  • 1
    Electronic Resource
    Electronic Resource
    The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1804-1807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of threshold current between 130 and 310 K of 1.65 μm In0.53Ga0.47As–InP bulk lasers grown by chemical beam epitaxy has been measured. Comparison with a calculation of the spontaneous recombination current at threshold allows one to determine the proportion of current loss over this temperature range. It is found that the loss can be described using an Auger recombination component of the form Rauger=C'n3 exp(−Ea/kBT) where n is the carrier population density in the undoped active region. The activation energy Ea is found to be 39±5 meV which is in excellent agreement with the theoretical value for the conduction to heavy hole band/split-off to heavy hole band Auger process. The values obtained for the Auger coefficient C over the temperature range are in close agreement with published values obtained by time resolved photoluminescence. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360212
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  • 2
    Electronic Resource
    Electronic Resource
    A novel field-effect mobility measurement on a gateless InGaAs/InAlAs heterojunction in a parallel magnetic field (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4560-4561 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for measuring the field-effect mobility of a gateless In0.53Ga047As/In0.52Al0.48As heterojunction has been developed by using the nonpersistent photoconductive effect. Subband depopulation in a parallel magnetic field is consistent with the "universal'' depopulation observed in InAs, InSb, and HgCdTe metal-oxide-semiconductor field-effect transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343931
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  • 3
    Electronic Resource
    Electronic Resource
    Sulfur doping behavior of gallium antimonide grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 395-399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sulphur from an electrochemical source has been used to dope GaSb grown by molecular-beam epitaxy. The incorporation of sulphur in the epilayers has been measured by secondary ion mass spectrometry, and the effects of substrate temperature during growth and of the antimony-to-gallium flux ratio have been studied.The incorporation has been found to be a strong function of substrate temperature, varying from ∼100% below 435 °C to ∼1% at 525 °C. The incorporation also increases with antimony overpressure, varying by a factor of 3 on changing the antimony-to-gallium flux ratio from 1:1 to 4:1. The substrate temperature dependence is described by a simple kinetic model. The electrical activity of the incorporated sulphur is shown to be close to 100%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340251
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  • 4
    Electronic Resource
    Electronic Resource
    Beryllium diffusion in GaInAs grown by molecular beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5344-5348 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of Be from buried Be-doped layers in GaInAs has been studied for temperatures between 600 and 700 °C. An interstitial-substitutional model is proposed for the diffusion mechanism, which is dependent on growth conditions and consistent with the data presented. Under growth conditions where Be transport is minimized GaInAs junction field-effect transistors have been produced with transconductances in excess of 200 mS mm−1 for a 1-μm gate length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343727
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  • 5
    Electronic Resource
    Electronic Resource
    The influence of growth conditions on sulfur and selenium incorporation in Ga1−xAlxAs grown by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1009-1014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electrochemical cell Pt/AgI/Ag2 X/Pt (X=S,Se) has been used as a highly controllable source of chalcogen dimers for n-type doping of Ga1−xAlxAs grown by molecular-beam epitaxy (MBE). The incorporation behavior has been investigated as a function of alloy composition, growth temperature, and arsenic overpressure. At low temperatures, 〈600 °C, sulfur and selenium are incorporated into Ga1−xAlxAs in a facile manner. At higher temperatures, where loss of chalcogen dopant from GaAs has previously been observed, sulfur shows an enhanced stability in the aluminum-containing alloys. Excess As4 is shown to hinder the loss further. The behavior is modelled in terms of the relative stabilities of the volatile and involatile gallium and aluminum chalcogenides under MBE growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337389
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of growth conditions on undoped and sulfur-doped InP grown by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 213-218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and sulfur-doped InP have been grown by molecular-beam epitaxy. Undoped InP is n type and contains residual sulfur incorporated from the phosphorus source material. Increasing substrate temperatures during growth cause a decrease in the residual doping level to 2–3×1015 cm−3 but are associated with an increase in the compensation ratio and an increase in the concentration of epilayer defects, up to 105 cm−2. Doping with sulfur produced from an electrochemical sulfur cell has been studied in the range 5×1016–6×1019 cm−3. Highly doped layers show greatly improved surface morphology compared to low and undoped InP layers. Sulfur is shown not to diffuse to any measurable extent during MBE growth; however, at high growth temperatures (530 °C) there is loss of sulfur as a volatile indium sulfide. The removal of the surface oxide from the InP substrate before growth has been studied as a function of substrate temperature and phosphorus overpressure. The oxide layer can be removed at a low temperature (∼480 °C) by using a low pressure of P4 rather than P2 as is used during growth. The low-temperature oxide removal leads to improved epilayer morphology for undoped layers. The removal of the surface oxide and the loss of sulfur during growth as a volatile sulfide are discussed in terms of the free energy of formation of the various possible products.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337684
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  • 7
    Electronic Resource
    Electronic Resource
    Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4053-4063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adsorption of triethylgallium on the GaAs (100) (4×1) surface has been studied using the techniques of low energy electron diffraction, x-ray photoelectron and Auger spectroscopies, high resolution electron energy loss spectroscopy and temperature-programmed desorption. Condensed multilayers of the organometallic compound formed following adsorption at 150 K desorb from the surface at ∼170 K to leave a chemisorbed molecular monolayer of triethylgallium. Upon further heating this layer partially desorbs and partially decomposes to form diethylgallium in two competing processes. The diethylgallium so formed can also desorb or otherwise decompose ultimately to adsorbed Ga atoms in a reaction which results in the formation of hydrogen, ethene, and ethane. The temperature-programmed desorption characteristics of these latter species are found to be similar to those observed for a dissociated layer of ethyl bromide. A reaction scheme is proposed to account for the observations and kinetic parameters are obtained from computer modeling of the temperature-programmed desorption results. The reaction scheme is also used to evaluate the temperature-dependent growth rate expected in metal organic molecular beam epitaxial growth of GaAs. Comparison with experimental results is made and the work is discussed in the light of the previous model which has been proposed for the epitaxial growth of GaAs by metal organic molecular-beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346242
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of insulated gate Ga0.47In0.53As/Al0.48In0.52As heterojunction field-effect transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5090-5094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Insulated gate Ga0.47In0.53As/Al0.48In0.52As heterojunction field-effect transistors have been prepared using SiOx and SrF2 insulation and dilute acid and O2 plasma surface cleaning. The leakage current-gate voltage characteristics at different temperatures are analyzed by thermionic and field emission theories to extract the effective barrier heights. The transistor pinch-off characteristics and effective barrier height results are compared with elemental depth profiles obtained from Auger electron spectroscopy. It is concluded that O2 plasma cleaning followed by SiOx gate insulation, is the most suitable technique for fabricating devices and leads to an effective barrier height of 0.3±0.1 V. With refinement this fabrication route should lead to satisfactory room-temperature operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349017
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  • 9
    Electronic Resource
    Electronic Resource
    The influence of growth conditions on the growth rate and composition of GaAs and GaInAs alloys grown by chemical beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3187-3189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of source species, substrate temperature, substrate orientation, and group-V overpressure on the growth rate and composition of GaAs and InGaAs alloys grown by chemical beam epitaxy. Our results for GaAs growth rate versus substrate temperature show a significant effect of group-V overpressure on the details of this dependence. The incorporation of gallium from triethylgallium into GaInAs alloys is found to be strongly dependent on temperature and alloy indium concentration, but independent of the source of indium. It is also significantly dependent on group-V overpressure. We could find no effect on growth rate or composition dependence between growth on nominally (100) GaAs and InP substrates, and those cut 2° or 3° off axis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345401
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  • 10
    Electronic Resource
    Electronic Resource
    Anomalous silicon and tin doping behavior in indium phosphide grown by chemical beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1546-1548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous doping behavior of the most commonly used n-type dopants, Si and Sn, has been observed in InP grown by chemical beam epitaxy from trimethylindium and cracked phosphine. In the case of Si, although incorporation is initially facile, the doping level decreases in successive runs. It is proposed that this decrease is due to the formation of SiC in the dopant cell. The behavior of Sn is more complex. In the range of Sn cell temperatures from 600 to 750 °C, incorporation is proportional to the elemental Sn vapor pressure. However, at low cell temperatures, 175–350 °C, anomalously large incorporations of Sn are observed. We attribute this behavior to the formation of a volatile metalorganic precursor within the Sn cell, its transport to the substrate, and subsequent decomposition and incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103170
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