ISSN:
1572-8986
Schlagwort(e):
Plasma etching
;
microwave discharges
;
electron spectroscopy for chemical analysis
;
addition of H2 and Ar
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
,
Technik allgemein
Notizen:
Abstract Vinyl iodide (C2H3I) microwave discharges with additions of H2 and Ar are found to provide faster etch rates than conventional CH4/H2/Ar discharges for InP, InGaAs, GaAs, and AlGaAs. This is a result of the relatively high volatilities of indium, gallium, and aluminum iodide species. The etched features are smooth and anisotropic over a wide range of do self-biases (−150 to −350 V), process pressures (1–20mTorr), and microwave powers (150–500 W). The polymer that forms on the mask during the plasma exposure can be readily removed in O2 discharges. Electron spectroscopy for chemical analysis (ESCA) showed that the etched surfaces are slightly deficient in the group V elements under most conditions, but changes to the optical properties of the semiconductors are minimal. No defects are visible by transmission electron microscopy (TEM) in GaAs or InP samples etched at dc biases ≤ −250 V.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF01466048
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