Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 303-305
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Heteroepitaxial growth of SiC polytypes, 3C- and 6H-SiC, has been studied by chemical vapor deposition. Raman spectra were used to identify the polytypes. 3C-SiC and 6H-SiC were grown on 6H-SiC at low (1330–1500 °C) and high temperatures (1700–1800 °C), respectively. On the other hand, on 3C-SiC, only 3C-SiC was grown at all the temperatures. 3C-SiC epilayers grown at high temperatures have smooth surfaces and good electrical properties compared with those grown at low temperatures.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.339147
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