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  • 1
    Electronic Resource
    Electronic Resource
    Growth and electronic properties of thin Si3N4 films grown on Si in a nitrogen glow discharge (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3995-4002 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Si3N4 films were grown on Si by direct exposure to a low-temperature (250–650 °C) nitrogen glow discharge at 13.56 MHz. The activation energy for growth is 0.3±0.12 eV. Their chemical and electronic, bulk, and interfacial properties are studied as a function of the film thickness and growth temperature. The ultrathin films (d〈100 A(ring)) exhibit an average breakdown field of 10–12 MV/cm, a dielectric constant equal to 5.5, and are effective barriers against oxidation at 1000 °C. Conduction in ultrathin films is via Fowler–Nordheim tunneling over the temperature range 77–420 K. Deep-level transient spectroscopy analysis reveals the presence of two majority-carrier (hole) traps at the interface, with activation energies 0.1 and 0.35 eV, respectively. The trap at EV+0.35 eV is attributed to the Si dangling bond defect while the trap at EV+0.1 eV could be attributed to a structural defect that is in situ annealed at growth temperatures higher than 500 °C. The interface state concentration is a sensitive function of the growth temperature and varies in the range 8×1010–6×1012 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348460
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of nitrogen on oxygen precipitation in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3760-3765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect interactions among oxygen, carbon, and nitrogen during a three-step high-low-high intrinsic gettering process (1100 °C+750 °C+1000 °C) were studied using differential analysis of Fourier transform infrared (FTIR) absorption spectra of Czochralski-Si crystals intentionally doped with carbon and nitrogen. Two phenomena related to nitrogen were observed: (1) Nitrogen-enhanced oxide nucleation in the temperature range from 750 to 1100 °C, thus having a negative effect on the denuding step; and (2) defect interaction associated with carbon during oxygen precipitation was significantly affected by the co-existence of nitrogen. For the latter effect the first-step annealing at 1100 °C was crucial. The results presented are consistently interpreted assuming that nitrogen participates in creation of nucleation sites for heterogeneous oxygen precipitation, and also assuming that nitrogen aggregates at the strain regions surrounding precipitates and thus retards Si self-interstitial migration. This explanation was supported by observed differences in oxygen-precipitate-related FTIR absorption and by the behavior of stress-related photoluminescence D lines.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350886
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of carbon on oxygen precipitation in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4313-4319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic Fourier-transformed infrared-spectroscopy study of oxygen and carbon in isolated form and as complexes in the silicon lattice has revealed a direct correlation between the decrease of substitutional carbon concentration and the decrease of interstitial oxygen concentration during 750 °C annealing. At a concentration exceeding 2 ppma, carbon was also found to enhance oxide precipitate growth. After completing a three-step annealing (1100 °C+750 °C+1000 °C), an oxide-precipitate-related IR-absorption band was observed. The changes of the IR-absorption band were correlated with annealing-induced changes in the state of carbon. A direct incorporation of carbon into oxide precipitates, and/or carbon interaction with silicon self-interstitials generated during oxygen precipitation, are suggested to have an effect on reducing lattice strain associated with the oxygen-precipitation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344947
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrolysis of AIIIBV Intermetallic Compounds1 (1957)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 79 (1957), S. 4260-4261 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01573a004
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  • 5
    Electronic Resource
    Electronic Resource
    New application for isothermal capacitance transient spectroscopy: Identification of tunneling in semiconductor-insulator interfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 137-139 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The GaAs-insulator interface is characterized by deep level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS). It is demonstrated that while DLTS can only detect transients with temperature-dependent emission rates, ICTS can detect temperature-independent phenomena as well. The GaAs-insulator interface is characterized by two electron traps, with activation energies 0.67 and 0.23 eV, respectively, and a tunneling component that is detected only by ICTS. This tunneling component, which dominates the ICTS spectrum at 80 K〈T〈 180 K and is characterized by a field-induced barrier reduction given by ΔEE=1.4×10−3q(square root of)E, is attributed to pure tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104952
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  • 6
    Electronic Resource
    Electronic Resource
    Optical characterization of semi-insulating GaAs: Determination of the Fermi energy, the concentration of the midgap EL2 level and its occupancy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 511-513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The key electronic characteristics of semi-insulating GaAs, i.e., the Fermi energy, concentration, and occupancy of the midgap donor EL2, and the net concentration of ionized acceptors can all be determined from high-resolution measurements of the EL2 intracenter absorption. The procedure is based on the measurement of zero-phonon line intensity before and after the complete transfer of EL2 to its metastable state followed by thermal recovery. The procedure is quantitative, involves no fitting parameters, and unlike existing methods, is applicable even when a significant part of the EL2 is ionized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98382
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  • 7
    Electronic Resource
    Electronic Resource
    Optical and electronic properties of vanadium in gallium arsenide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 163-170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of vanadium doping on the electrical and optical properties of GaAs were systematically studied in melt-grown crystals prepared by the liquid-encapsulated Czochralski and horizontal Bridgman techniques and in epitaxial crystals prepared by liquid-phase electroepitaxy. By employing deep-level transient spectroscopy, Hall-effect measurements and the V2+(3d3) and V3+(3d2) intracenter optical-absorption spectra, one vanadium-related level was identified in all crystals, i.e., the substitutional-vanadium acceptor level (V3+/V2+) at 0.15±0.01 eV below the bottom of the conduction band. From the absorption measurements we conclude that the vanadium (V4+/V3+) donor level must be located within the valence band. Because of its energy position, the above level cannot account for the reported semi-insulating properties of V-doped GaAs. We observed no midgap levels resulting from vanadium-impurity (defect) complexes. The high resistivity reported for certain V-doped GaAs crystals must result from indirect effects of vanadium, such as the gettering of shallow-level impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339174
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  • 8
    Electronic Resource
    Electronic Resource
    Identification of intrinsic gettering centers in oxygen-free silicon crystals (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 622-626 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intrinsic gettering centers in oxygen-free silicon crystals after a high–low–medium-temperature annealing cycle were successfully identified using transmission electron microscopy and energy dispersive x-ray spectroscopy. These centers have a butterfly-type shape and they consist of interstitial-type extended multiple dislocation loops in {110} planes of 0.1–0.7 μm diameter and a high density of small 3–15-nm-diam precipitates located inside the dislocation loops and/or on the dislocation line. Compositional x-ray analysis identified Cu as the predominant metal component of the precipitates. Occasionally Ni and very rarely Fe were also detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337458
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  • 9
    Electronic Resource
    Electronic Resource
    Erratum: "New intrinsic gettering process in silicon based on interactions of silicon interstitials'' [J. Appl. Phys. 60, 615 (1986)] (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2587-2587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339864
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3144-3147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that defect inhomogeneities of sizes larger than the electron mean free path are responsible for the low values and anomalous temperature dependence of the electron mobility in semi-insulating (SI) GaAs. The room-temperature electron mobility values below about 6000 cm2/V s cannot be uniquely used for the determination of the concentration of ionized defects, since the contribution from inhomogeneities usually exceeds that from scattering by ionized impurities. The effects of the macroscopically inhomogeneous distribution of residual acceptors and the major deep donor EL2 diminish at elevated temperatures between 600 and 900 K, which offers a means for identification of inhomogeneities, and furthermore explains recently reported steplike mobility versus temperature behavior in SI-GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336893
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