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  • 11
    Electronic Resource
    Electronic Resource
    Positron mobility in thermally grown SiO2 measured by Doppler broadening technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2874-2876 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positron mobility in thermally grown SiO2 is deduced from Doppler broadening lineshape data on a metal-oxide-semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)×10−3 cm2/s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349353
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  • 12
    Electronic Resource
    Electronic Resource
    Implantation profile of low-energy positrons in solids (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1634-1636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple form for an implantation profile of monoenergetic, low-energy (1–10 keV) positrons in solids is presented. Materials studied include aluminum, copper, molybdenum, palladium, and gold with atomic number ranging from 13 to 79. A simple set of parameters can describe the currently used Makhov profile in slow positron studies of solids. We provide curves and tables for the parameters that can be used to describe the implantation profiles of positrons in any material with atomic number in between 13 and 79.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104071
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  • 13
    Electronic Resource
    Electronic Resource
    Chemical ordering around open-volume regions in bulk metallic glass Zr52.5Ti5Al10Cu17.9Ni14.6 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1973-1975 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We provide direct experimental evidence for a nonrandom distribution of atomic constituents in Zr52.5Ti5Al10Cu17.9Ni14.6 bulk metallic glass using positron annihilation spectroscopy. The Ti content around the open-volume regions is significantly enhanced at the expense of Ni and Cu. Our results indicate that Ni and Cu atoms closely occupy the volume bounded by their neighboring atoms while Al, Ti, and Zr are less closely packed, and more likely to be associated with the open-volume regions. The overall distribution of elements seen by the positron is not significantly altered by annealing or by crystallization. Theoretical calculations indicate that the observed elemental distribution is not consistent with the known crystalline phases Zr2Cu and NiZr2, while Al3Zr4 shows some of the characteristics seen in the experiment. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1313367
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  • 14
    Electronic Resource
    Electronic Resource
    Detection of current-induced vacancies in thin aluminum–copper lines using positrons (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 406-408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ depth-resolved positron annihilation spectroscopy (PAS) is used to show dynamic formation of vacancies in 1 μm×1 μm Al-0.5 wt % Cu lines under current flow. We show that the number of vacancies in these lines increases when a dc current (8×104 A/cm2) is applied. This increase in vacancy concentration is substantially greater than that due to thermal vacancy generation alone (4×1018 cm−3 versus 3×1017 cm−3). Isothermal measurements (with no current flow) yield a vacancy formation energy of 0.60±0.02 eV. These results show that PAS can be used to examine the initial stages of interconnect damage due to electromigration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116700
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  • 15
    Electronic Resource
    Electronic Resource
    An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 99-101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we examine the feasibility of applying positron annihilation spectroscopy to the study of hydrogenized amorphous silicon (a-Si:H)-based structures produced by chemical vapor deposition techniques. The positron probe, sensitive to open volume formations, is used to characterize neutral and negatively charged silicon dangling bonds, typical for undoped and n-doped a-Si:H, respectively. Using depth profiling along the growth direction a difference was observed in the electronic environment of these defects, which enables their identification in a p-i-n device. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121793
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  • 16
    Electronic Resource
    Electronic Resource
    Detection of hydrogen-plasma-induced defects in Si by positron annihilation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1684-1686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a positron annihilation study of defects created in Si by rf hydrogen-plasma exposure at 275 °C. Analysis of positron annihilation spectroscopy data indicates voidlike structures in a defective layer extending to ≈14 nm from the surface at a concentration of 1.9±0.5×1020 cm−3. The Doppler broadening parameter for the annihilation gamma rays is strongly correlated to the hydrogen coverage of the void surfaces, voids remain in the Si to at least 800 °C while the hydrogen is desorbed from their surfaces between 600 and 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111831
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  • 17
    Electronic Resource
    Electronic Resource
    Annealing of low-temperature GaAs studied using a variable energy positron beam (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 87-89 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annihilation characteristics of monoenergetic positrons implanted in a molecular beam epitaxy layer of low-temperature (LT) GaAs annealed at temperatures from 300 to 600 °C were measured. A gallium vacancy concentration of approximately 3×1017 cm−3 is inferred for the as-grown material. The S parameter increased significantly upon anneal to 500 °C. The dominant positron traps in samples annealed at and below 400 °C are distinct from those acting for samples annealed to 500 or 600 °C. The change in S parameter for the 600 °C annealed sample compared to the GaAs substrate, SLT,600=1.047Ssub, is consistent with divacancies or larger open volume defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109706
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  • 18
    Electronic Resource
    Electronic Resource
    Defect distribution in low-temperature molecular beam epitaxy grown Si/Si(100), improved depth profiling with monoenergetic positrons (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2855-2857 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distribution of open-volume defects has been studied in Si(100) crystals grown by molecular beam epitaxy at 300 °C by the variable-energy monoenergetic positron beam technique combined with well-controlled chemical etching. This procedure gave a 10 nm depth resolution which is a significant improvement over the inherent depth resolving power of the positron beam technique. The epitaxial layer was found to grow defect-free up to 80 nm, from the interface, where small vacancy clusters, larger than divacancies, appear. The defect density then sharply increases toward the film surface. The result clearly shows that the nucleation of small open-volume defects is a precursor state to the breakdown of epitaxy and to the evolution of an amorphous film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113452
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  • 19
    Electronic Resource
    Electronic Resource
    Kinetics of hydrogen interaction with SiO2-Si interface trap centers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 330-332 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of low temperature (≤700 °C ) annealing on the thermal dissociation of hydrogen-passivated interface trap centers of a SiO2-Si(100) system is studied using positron annihilation spectroscopy. The Si—H bonds dissociate with an activation energy of 2.60±0.06 eV. Assuming that the anneal generates trap centers with a single charge, positron measurements indicate that ∼4.5×108 trap centers/cm2 are created by a 600 °C anneal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112361
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  • 20
    Electronic Resource
    Electronic Resource
    Positron trap centers in x-ray and γ-ray irradiated SiO2 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 385-387 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Doppler broadening annihilation spectroscopy, we investigated the properties of irradiated samples of SiO2/Si(100) with 117 nm thick oxide layer, grown in dry O2 on p- and n-type substrates. These samples were irradiated with γ rays and x rays at doses in the range of 7×104–9×106 rad and 50–2000 mJ/cm2, respectively. The changes observed in the Doppler broadening line shape parameter after irradiation and its recovery during isochronal annealing were used to obtain an activation energy of 1.48–1.61 eV required for annealing the defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110051
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