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  • 11
    Electronic Resource
    Electronic Resource
    Erratum: "Electronic structures of In1−xGaxAs-InP strained-layer quantum wells'' [J. Appl. Phys. 65, 3096 (1989)] (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4990-4994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343440
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  • 12
    Electronic Resource
    Electronic Resource
    Valence-band mixing effects on the gain and the refractive index change of quantum-well lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4056-4064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of valence-band mixing on the gain and on the refractive index change of the quantum-well laser and the effect of an applied electric field perpendicular to the quantum wells for gain switching are studied theoretically. Our calculations are based on the multiband effective-mass theory (k⋅p method) and the density-matrix formalism with the intraband relaxation taken into account. First, we calculate the nonparabolic valence-band structure by the finite difference method after making a unitary transformation of the Luttinger-Kohn Hamiltonian. The calculated gain for our model shows remarkable differences in both spectral shape and peak amplitude as compared with those for the conventional model of the parabolic valence band. The peak gain is reduced considerably and the gain spectrum is more symmetric in our model compared with that for the conventional model. The refractive index change shows a negative increment in the active region for both the TE and TM polarizations resulting in the antiguidance. However, the TM polarization shows more negative change which would result in the suppression of the TM modes as compared with the TE modes. As another example, the perpendicular electric field effects on the quantum-well laser with lateral current injection are also calculated. A red shift and a reduction of the gain spectrum are shown when an electric field is applied. This may have applications as a tunable and high-speed switching quantum-well laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341339
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  • 13
    Electronic Resource
    Electronic Resource
    Dielectric property of (TiO2)x−(Ta2O5)1−x thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 332-334 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (TiO2)x−(Ta2O5)1−x thin films were prepared with radio-frequency magnetron sputtering deposition in this study. The dielectric constant measured from these films appears to critically depend on the amount of TiO2 incorporated into the film and post-anneal condition. The composition dependence was found similar to that reported on (TiO2)x−(Ta2O5)1−x bulk. The highest value of dielectric constant is about 55 for a TiO2 content of 8% and annealing at 800 °C. Compared to pure Ta2O5 thin films, significant enhancement in dielectric constant is obtained by adding small quantity of TiO2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120746
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  • 14
    Electronic Resource
    Electronic Resource
    p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3209-3211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117963
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  • 15
    Electronic Resource
    Electronic Resource
    Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 281-283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical metastability has been studied in undoped GaN films grown on SiC substrates having a previously deposited AlN buffer layer. Brief exposures to a higher intensity ultraviolet light resulted in temporary changes in the optical properties of the GaN layer. The photoinduced changes created high contrast patterns on samples that could be observed under an optical microscope with lower intensity ultraviolet excitation. The subband gap yellow photoluminescence peak at 2.2 eV increased significantly after the patterns were created. This change slowly returned (hours) to its initial value at room temperature. The retention time decreased to a few seconds at temperatures above 100 °C. The data showed that a 1.34 eV thermal activation energy exists, which suggests that the cause of these metastable properties is related to the subband gap yellow luminescence. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1381417
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  • 16
    Electronic Resource
    Electronic Resource
    Electron-beam-induced optical memory effects in GaN (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2675-2677 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metastable effects in unintentionally doped GaN films grown on SiC substrates have been investigated using cathodoluminescence (CL). Memory effect patterns produced optically are observed in CL images. An electron beam can also produce memory effect patterns and the resulting changes in the luminescence spectra are quite similar for either optical or electron-beam-induced patterns. CL spectra reveal that the yellow luminescence at 2.2 eV increases significantly with little change in the band-edge emission in both cases. Samples that do not exhibit optically induced memory effects are also investigated and do not exhibit electron-beam-induced patterns, either. Monochromatic CL images at 540 and 365 nm confirm the similarity of optically and electron-beam-induced memory effects based on changes in luminescence spectra. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1469222
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  • 17
    Electronic Resource
    Electronic Resource
    Accumulation of aluminium in the cell wall pectin in cultured tobacco (Nicotiana tabacum L.) cells treated with a combination of aluminium and iron (1999)
    Oxford, UK : Blackwell Science Ltd.
    Plant, cell & environment 22 (1999), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: In nutrient medium, aluminium (Al) accumulation in tobacco cells occurs only in the presence of ferrous ion [Fe(II)]. The localization of Al was examined to elucidate a mechanism of Al accumulation. After the digestion of Al-treated cells with cellulase and pectolyase together, the resulting spheroplasts contained as much Al as the intact cells. However, the cell walls isolated from Al-treated cells also contained as much Al as the intact cells. Comparison of sugar and Al contents in polysaccharide components extracted chemically from cell walls isolated from intact cells and spheroplasts revealed that the enzymes digested most of the cellulose and hemicellulose, but only half of the pectin, and that Al mainly existed in the pectin remaining in the spheroplasts. Gel-permeation chromatography of the pectin fraction (NH4-oxalate extract) from the cell walls of the intact cells indicated that Al was associated with small polysaccharides of approximately 3–7 kDa. These results suggest that a minor part of pectin is a major site of Al accumulation. The content of cell wall pectin increased during Al treatment in nutrient medium. Taken together, we hypothesize that Al may bind to the pectin newly produced during Al treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3040.1999.00467.x
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  • 18
    Electronic Resource
    Electronic Resource
    A new mosaic disease of Amazon lily in Taiwan (2004)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 53 (2004), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0032-0862.2004.00993.x
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  • 19
    Electronic Resource
    Electronic Resource
    First report of bacterial leaf blight of white-flowered calla lily caused by Xanthomonas campestris pv. zantedeschiae in Taiwan (2005)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 54 (2005), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.2005.01168.x
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  • 20
    Electronic Resource
    Electronic Resource
    First identification of Tobacco mild green mosaic virus on Capsicum annuum in Taiwan (2005)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 54 (2005), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.2005.01171.x
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