Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4592-4597 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe (111)B layers were grown on oriented and misoriented GaAs (100) substrates by hot-wall epitaxy. The crystallinity of the layers was examined by x-ray diffraction. The strain relaxation was investigated by x-ray diffraction and optical reflectance spectra. (1) For the layers on oriented substrates, it is found that the strain of the layer is relaxed as the layer thickness increases, but additional strain, which is probably due to the formation of twinned domains, remains and is hardly relaxed. (2) Layers on misoriented substrates are twin free with good crystalline quality. Strain is relaxed as the layer thickness increases. The residual strain of layers thicker than 10 μm is for the most part due to the difference of thermal expansion coefficients between CdTe and GaAs.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1606-1609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) substrates by hot wall epitaxy were investigated by transmission electron microscopy. The satellite spots observed in transmission electron diffraction patterns confirmed the superlattice periodicity and agreed very well with the results from x-ray diffraction. Smooth and abrupt interfaces are observed in (110) cross-sectional images. Strain information obtained from the transmission electron diffraction and lattice images indicates that coherent strain has not been achieved in ZnTe-ZnSe superlattices when the layer thickness of each constituent material exceeded 13 A(ring).
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 112-115 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction from the (110) thin edges is proposed to analyze the ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) substrates. Strained lattice spacings parallel to the interfaces and the critical layer thickness of coherent growth can be determined directly by this technique. In spite of the large (7%) lattice mismatch between ZnTe and ZnSe layers, the experimental results show that the ZnTe-ZnSe superlattices have been prepared coherently by hot wall epitaxy and the critical thickness is about 10 A(ring). The strained lattice spacings determined by x-ray [440] diffraction, together with those of Raman scattering measurement, agree very well with the theoretical results. The residual strain in ZnTe/GaAs(001) was also estimated to be about 5×10−4 (biaxial tensile) by x-ray diffraction, where the main cause is found to be the difference of thermal expansion between ZnTe films and GaAs substrates.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 665-666 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films were prepared by hot wall epitaxy on sapphire (0001) substrates from Ga and NH3 sources. Growth characteristics of the GaN films were investigated from reflection high energy electron diffraction (RHEED) and x-ray diffraction measurements, and effects of initial layers on the film growth are discussed. High quality films with streak RHEED patterns were obtained when the films were grown on a GaN initial layer prepared by Ga predeposition and its nitridation on surface nitrided sapphire substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1296-1299 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new and stable scanning tunneling microscope (STM) system has been constructed for the investigation of thin organic films in air. The STM unit is made of Macor, which is machinable ceramic and has a small thermal expansion coefficient and a high mechanical stiffness. Three-dimensional coarse position adjustment (within 3 μm) is carried out using five stacked piezoelectric transducers (PZTs). A cross-type configuration is used to prevent the thermal effect of the x- and y-direction displacement mechanism. In order to achieve high resolution, x-, y-, and z-direction displacements are performed using a tube-type PZT. The z direction of the tube PZT has a high mechanical resonant frequency of 24.4 kHz. Therefore, this STM unit is mechanically rigid, and allows stable operation under mechanical disturbances (sound and mechanical vibration). Moreover, this STM unit can be controlled for 24 h or longer by using an ordinary operational amplifier, because thermal effects are compensated. The STM system can also be used to obtain information on the spatially resolved local tunneling barrier height, which is sensitive to the chemical structure of the sample. The capabilities of this newly designed STM are demonstrated with experiments investigating the morphology and tunneling barrier height of stearic acid thin films on indium-tin-oxide substrates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 619-620 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbSrS/PbS double-heterostructure and multiple quantum well lasers were prepared by hot wall epitaxy, and the dependence of the properties on the cladding layer band gap and active layer thickness was investigated. Output photon energy of the double-heterostructure laser shifted to the high energy side owing to the strain between PbSrS cladding and the PbS active layers. The shift decreased by increasing the PbS active layer thickness. It was estimated that the lattice mismatch between cladding and the active layers is accommodated by the strain when the PbS active layer thickness is as thin as 0.5 μm.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2114-2116 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission spectra of ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) have been measured for the first time and step-like optical-absorption spectra between conduction and valence subbands have been observed. The GaAs substrates with a narrower band gap than the superlattices were partially removed by a chemical etching method. For the ZnTe-ZnSe superlattices with a type II band structure, the transmission spectra provide a powerful tool for determining the effective band gap and band offset, because the spatial indirect transition of separately confined electrons and holes is very weak and therefore difficult to observe in photoluminescence measurements. The absorption thresholds observed in the transmission spectra agree very well with the exciton emissions that appeared in photoluminescence data.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 430-431 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb1−xSrxS/PbS double-heterostructure stripe contact lasers were prepared for the first time using a hot-wall expitaxy technique. The laser operated up to 245 K pulsed (2.97 μm) and 174 K cw, which are the highest operating temperatures ever reported for any semiconductor diode lasers operating around 3 μm. In this letter preparation and properties of the Pb1−xSrxS lasers are presented.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 239-241 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x-ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x-ray diffraction measurements.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 274-275 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb1−x EuxS films were prepared for the first time using hot wall epitaxy technique. X-ray diffraction and optical transmission measurements were performed for the films. Films with energy gaps up to 0.9 eV (up to x=0.2) were obtained. Lattice constants of the films were very close to that of PbS as is expected from the small lattice mismatch between PbS and EuS. It was found that the energy band gap increases very rapidly with the EuS content up to x=0.05 (dEg/dx=5 eV).
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...