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  • 11
    Electronic Resource
    Electronic Resource
    High resolution surface plasmon resonance spectroscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4656-4660 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method for detecting surface plasmon resonance with high resolution (∼10−5 degrees or ∼10−8 refractive index units) and fast response time (1 μs) is described. In the method, light is focused through a prism onto a metal film on which molecules to be detected are adsorbed. The total internal reflection of the incident light is collected with a bicell photodetector instead of a single cell or an array of photodetectors that are widely used in previous works. The ratio of the differential signal to the sum signal of the bicell photodetector provides an accurate measurement of shift in surface plasmon resonance angle caused by the adsorption of molecules onto the metal films or by conformational changes in the adsorbed molecules. Using the method, we have studied subtle conformational changes in redox protein, cytochrome c, due to an electron transfer reaction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150128
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  • 12
    Electronic Resource
    Electronic Resource
    Electrical transport properties of CoSi2 and Co(SixGe1−x)2 films formed by different methods (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5427-5432 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical transport properties of CoSi2 and Co(SixGe1−x)2 thin films formed by solid state interaction and co-evaporation in the range of 4–300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3-μΩ-cm and room-temperature (RT) resistivity of 15 μΩ cm. The co-evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250 °C show a low resistivity of 70–80 μΩ cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2–3×1022 cm−3, while the carrier Hall mobility has large differences.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350200
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  • 13
    Electronic Resource
    Electronic Resource
    High critical current densities in YBa2Cu3O7−x thin films formed by metalorganic chemical vapor deposition at 730 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 648-650 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x superconducting thin films with a critical current density of 2.3×106 A/cm2 at 77.7 K and 0 T were prepared by a metalorganic chemical vapor deposition process. The films were formed in situ on LaAlO3 at a substrate temperature of 730 °C in 2 Torr partial pressure of N2O. Resistivity and magnetic susceptibility measurements of the as-deposited films show a sharp superconducting transition temperature of 89 K with a narrow width of less than 1 K. Critical current densities were measured by the dc transport method with a patterned bridge of 120 μm×40 μm. Both x-ray diffraction and high-resolution electron microscopy measurements indicate that films grew epitaxially with the c axis perpendicular to the surface of the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104557
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  • 14
    Electronic Resource
    Electronic Resource
    Photochemistry of N-heterocycles. VII. Thermal and photodecarboxylation of 2-, 3-, and 4-pyridylacetic acid (1971)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 93 (1971), S. 3427-3431 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00743a021
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  • 15
    Electronic Resource
    Electronic Resource
    Photoluminescence behavior of poly(quinoline)s in silica glasses via the sol–gel process (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1162-1164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A full color display with its spectra covering the entire visible color range using a single polymer is presented here. Different concentrations of poly(2,6-[4-phenylquinoline]) and poly(2,6-[p-phenylene]-4-phenylquinoline) were incorporated into silica gels via the sol–gel technique. At high concentrations, the conjugated polymers form multiple excimers in the channels within the silica network, leading to the emission of red light (∼600 nm). At low concentrations, the polymer chains are isolated and are being trapped individually in the silica domain, which results in the emission of blue light (∼400 nm). For concentrations in-between, moderate extensive chain interaction leads to the emission of green, yellow, and orange colors. Therefore, the color tunability can be achieved by simply varying the concentration of quinoline polymers in the silica glasses. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450040
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  • 16
    Electronic Resource
    Electronic Resource
    Direct evidence of micropipe-related pure superscrew dislocations in SiC (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 353-355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of powerful x-ray imaging techniques using white-beam synchrotron radiation have been developed and applied to clearly reveal and map micropipes in SiC crystals at a "magnified" level. The experimental results and the corresponding simulations demonstrate explicitly that the micropipes are pure superscrew dislocations (SSDs). Moreover, these techniques provide accurate descriptions of the detailed structure of the SSDs, including the spatial distribution of the strain fields, the magnitudes of the Burgers vectors, the dislocation senses, and the surface relaxation effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123069
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  • 17
    Electronic Resource
    Electronic Resource
    Thin-film metrology of silicon-on-insulator materials (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic rotating-analyzer ellipsometry employing a compensator was used to measure the ellipsometric angles and depolarization from 0.73 to 5.4 eV of commercial separation by implantation of oxygen wafers. The data were analyzed to find the thicknesses of the native oxide cap, the top Si layer, and the buried oxide (BOX). From the depolarization in the spectral region of interference fringes, we determine layer thickness nonuniformities. Although a reasonable agreement between the data can be found by describing the BOX with the optical constants of thermal oxide, it can be improved by modeling the BOX as an effective medium consisting of thermal oxide and amorphous Si. The physical justification for this model is the presence of Si islands near the BOX/substrate interface. We compare our ellipsometry results with a destructive analysis using electron microscopy and secondary ion mass spectrometry. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125651
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  • 18
    Electronic Resource
    Electronic Resource
    The mechanism of micropipe nucleation at inclusions in silicon carbide (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 784-786 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented for a possible mechanism of screw dislocation (including micropipe) nucleation in silicon carbide. The model is based on the observation of micropipe nucleation at the sites of foreign material inclusions using synchrotron white beam x-ray topography and transmission optical microscopy. It is shown that incorporation of the inclusion into the growing crystal can lead to deformation of the protruding ledge which constitutes the overgrowing layer. Accommodation of this deformation into the crystal lattice leads to the production of pairs of opposite sign screw dislocations which then propagate with the growing crystal. Evidence for the existence of such pairs of dislocations is presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124512
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  • 19
    Electronic Resource
    Electronic Resource
    Optical gain due to excitonic transitions in ZnCdSe/ZnMgSSe strained layer quantum well blue–green lasers: Prediction of low threshold under tensile strain (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1596-1598 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gain coefficient of excitonic transitions is calculated for unstrained as well as strained ZnCdSe/ZnMgSSe multiple quantum well (MQW) lasers as a function of operating wavelength and injection current. Unlike the III–V strained layer quantum well lasers, the gain coefficient due to excitonic transitions is significantly higher in II–VI systems as the exciton binding energy is more than 5 times larger. This results in a primary role for excitons in lasing which has been verified experimentally. Strain induced changes in energy band gaps and effective masses of light and heavy holes are included in the gain and threshold current density calculations, which are in agreement with experimental data available for compressive strained layers grown on GaAs substrates. Significantly low threshold current density of about 180 A/cm2 are predicted for the tensile strained ZnCdSe–ZnMgSSe and ZnCdSe–ZnSeTe quantum well lasers using InP substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113863
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  • 20
    Electronic Resource
    Electronic Resource
    Positron annihilation and internal surfaces (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1334-1335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doppler broadened gamma spectra from positron annihilations in alumina and several zeolites were measured as a function of internal surfaces. In all cases, the gamma line shape parameter was found to vary proportionally with surface area. The results greatly enhance the potential of using positron annihilation spectroscopy as a microprobe for surface studies of porous materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109722
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