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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1392-1395 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the size effects in ferroelectric thin film, we measured the optical transmittance and Raman spectra in BaTiO3 thin films deposited by the rf-magnetron sputtering technique on fused quartz and (111) Si substrates. A variation in the energy gap and Raman peaks with film thickness and grain size was observed and the possible origin was analyzed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1515-1525 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic sources based upon resonant tunneling diodes (RTDs) usually generate power by establishing limit cycles which exchange energy with storage elements in an external biasing circuit; hence, the output power in this type of implementation will always be limited by extrinsic effects. We verify the presence of multiple energy-storage mechanisms solely within the RTD and characterizes the interdependencies necessary to induce intrinsic oscillations observed in quantum mechanical simulations. Specifically, we show that a nonlinear "access'' resistance and quantum-well inductance is responsible for the hysteresis, "plateaulike'' behavior, and bistability associated with the intrinsic current–voltage (I–V) characteristic. Furthermore, a new circuit-level representation which accurately incorporates the nonlinear dependencies into these heretofore "linear'' equivalent-circuit elements is used to demonstrate the different roles, as well as the degree of cooperative interplay, of the intrinsic oscillations and hysteresis in determining the overall I–V characteristics of the RTD.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4216-4220 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, granular (NiFeCo)35Ag65 films having a nominal atomic ratio of Ni:Fe:Co=74:16:10, near the zero magnetostriction ternary alloy, were prepared by dc magnetron co-sputtering. Subsequent thermal annealing was performed in a vacuum (〈2×10−3 Pa) furnace for 1 h at various temperatures ranging from 250 to 500 °C. The crystalline structure and magnetic structure of the as-deposited and annealed films were characterized by Rutherford backscattering spectroscopy, x-ray diffraction, atomic force microscopy, and magnetic force microscopy. The giant magnetoresistance (GMR) for the films was measured as a function of temperature between 20 and 300 K using a conventional four-point probe dc technique in the presence of a magnetic field up to 7.6 kOe. It was found that, the crystalline structure, the magnetic structure, and consequently the GMR were closely related to the thermal treatment. The film annealed at the temperature of 300 °C has the isolated single domain structure and the highest GMR value of 19.1% at 20 K, while the film annealed at 500 °C has the long-range domain structure and the lowest GMR value of 9.9% at 20 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2157-2159 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr0.5Ti0.5)O3 thin films 25 nm in thickness were grown on LaNiO3/Pt/Ti buffered Si substrates at 600 °C by metalorganic chemical vapor deposition. P–E studies showed a remanent polarization value of 8 μC/cm2 with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4×108 cycles (±3 V oscillation) before breakdown. Moreover, the effect of space charge on the C–V behavior of these films was illustrated I–V characteristics of these films were also described. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2516-2519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Mg1/3Nb2/3)O3 dielectrics modified by CaTiO3 were prepared by a solid-state reaction method, and microstructure analyses were performed together with the dielectric characterization. Solid solutions with cubic perovskite structures were obtained for compositions of 0–60 mol %CaTiO3, and the orthorhombic perovskite structures were observed for compositions near to the end member of CaTiO3 in the present system. The dielectric loss and temperature coefficient could be pronouncedly reduced by incorporating CaTiO3 into Pb(Mg1/3Nb2/3)O3. Low-loss dielectrics (tan δ∼10−4 at 1 MHz) with dielectric constants of 120–262 and small temperature coefficient (τε∼−960 to −1100 ppm/ °C) were obtained, and further improvement of dielectric properties could be expected through structural modifications. Good microwave dielectric properties, ε=172.6 and Qf=1930 GHz, were achieved in a composition of 0.4Pb(Mg1/3Nb2/3)O3/0.6CaTiO3, where the temperature coefficient of resonant frequency τf was estimated as 470 ppm/ °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4154-4159 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS:Mn thin films at various substrate temperature are grown by halide transport chemical vapor deposition. These films show blue and red photoluminescence (PL) in addition to the typical yellow-orange emission. The manganese crystal environment is characterized by electron spin resonance (ESR) spectroscopy. A computer simulation of the ESR spectra is used to quantify the number of isolated manganese and the number of clustered manganese in the crystal lattice. These data reveal that the red emission occurs in films with low manganese concentration, and, therefore, occurs from a mechanism different than those previously posed. The activation energy for Mn incorporation is measured to be Ea=137 kJ/mol. From these data, a Mn–Cl defect pair is proposed as the red emission center. Self-activated blue emission in intentionally Cl-doped ZnS films is also demonstrated. Thus both red and blue PL in ZnS thin films result from chloride impurities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3737-3739 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Picosecond laser pulses were utilized to generate shock waves in a cadmium selenide (CdSe) semiconductor. A pump-and-probe technique was used to study the shock pressure effects on the carriers in CdSe by measuring the photoluminescence emission. A blue shift was observed in the photoluminescence peak position under shock-wave loading. By varying the delay time of the probe pulse with respect to the pump pulse, a shock pressure profile in time was monitored. By analyzing the high-energy tail of electron-hole plasma photoluminescence spectra, the average hot-electron temperatures were deduced for both shocked and unshocked emission. Under shock loading conditions, an increase in the average hot-electron temperature was observed to remain over 20 ns.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2908-2913 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analysis of admittance shows a prominent influence from the capacitive effect, due to the dynamic shifting of the resonant energy levels. The model developed is helpful for understanding the RTD's high-frequency behavior and device applications.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5427-5432 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical transport properties of CoSi2 and Co(SixGe1−x)2 thin films formed by solid state interaction and co-evaporation in the range of 4–300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3-μΩ-cm and room-temperature (RT) resistivity of 15 μΩ cm. The co-evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250 °C show a low resistivity of 70–80 μΩ cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2–3×1022 cm−3, while the carrier Hall mobility has large differences.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 2 (1990), S. 2002-2010 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Turbulent features in a shock tube's contact surface with 2NO2〈=〉N2O4 are explored. Turbulent densities and velocities show an overall power-law dependence in the fluctuation spectra. At fixed reactant percentages, turbulence increases with increasing Reynolds number. At fixed Reynolds numbers, increasing the reactant percentages cause a reduction in turbulence and an increase in the relative strength of discrete high-frequency components in the density fluctuation spectra. The reliability of conventional chemical modeling for this system apparently decreases with increasing turbulence in a manner suggestive of reaction rate distortion, consistent with theoretical speculation.
    Type of Medium: Electronic Resource
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