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  • 11
    Electronic Resource
    Electronic Resource
    A compact neutron counter telescope with thick radiator (COTETRA) for fusion experiments (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1636-1643 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of neutron spectrometer, which is called COTETRA (counter telescope with thick radiator), has been developed for diagnosing DT fusion plasma. It is based on the recoil proton measurement and has such advantages as: (1) direct measurement of the neutron energy without the unfolding procedure, (2) sufficiently fine energy resolution and high detection efficiency for 14 MeV neutrons, (3) wide dynamic range of counting rate, and (4) good n–γ discrimination. A prototype of COTETRA was constructed and tested using a DT neutron accelerator. The energy resolution of 5.3%±0.9% was obtained for 14 MeV neutron with the detection efficiency of 1.3×10−4 [counts/(n/cm2)]. A Monte Carlo simulation code was developed and the performances of COTETRA were examined. The calculation agrees with the results of the experiment within its margin of error and suggests that energy resolution up to 3% with a detection efficiency of 10−5 [counts/(n/cm2)] could be achieved if the condition of the radiator could be successfully adjusted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144852
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  • 12
    Electronic Resource
    Electronic Resource
    Electrical properties of BC2N thin films prepared by chemical vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2880-2882 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of BC2N thin films have been investigated in terms of the temperature dependence of the resistivity and Hall effect measurements. The BC2N thin films were prepared by chemical vapor deposition from acetonitrile and boron trichloride on polycrystalline Ni and quartz substrates. The experimental results indicated that the BC2N films were p-type semiconductors on both substrates, with acceptor levels between 7.5 and 23 meV relative to the valence band. The hole mobility on Ni substrates was one order of magnitude higher than that on the quartz substrates, suggesting that the thin film quality is better on Ni substrates than on quartz substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360029
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  • 13
    Electronic Resource
    Electronic Resource
    Bonding characterization of BC2N thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2962-2964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the bonding states of BC2N thin films prepared by chemical vapor deposition, one of the new layered BCN compounds. The chemical bonding states of boron, carbon, and nitrogen atoms in the BC2N thin films were investigated by using x-ray photoelectron spectroscopy to measure chemical shifts of 1s electrons, being compared with those in graphite and hexagonal (h-) BN. The results exhibited that the thin films had significant B–C and C–N bonds and were clearly different from graphite and h-BN, indicating that an atomic-level hybrid of the three elements was synthesized. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116369
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  • 14
    Electronic Resource
    Electronic Resource
    Surface morphology changes in ZnSe-related II–VI epitaxial films grown by molecular beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2938-2943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphological changes in ZnSe-related II–VI epitaxial films grown by molecular beam epitaxy have been investigated by atomic force microscopy and transmission electron microscopy. We found that under group-II-rich conditions with c(2×2) surface reconstruction, the process of roughening gives rise to periodic elongated corrugations aligned in the [11¯0] direction. Under group-VI-rich conditions with (2×1) surface reconstruction, rounded grains form instead of corrugated structures. The surface morphology is dependent on the VI/II ratio and growth temperature, but is independent of the film strain. The observed morphological changes are mainly due to growth kinetics and are not stress driven. We propose a model to explain the changes in surface morphology under group-II-rich conditions and group-VI-rich conditions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366128
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  • 15
    Electronic Resource
    Electronic Resource
    Prebaking and silicon epitaxial growth enhanced by UV radiation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2224-2229 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: UV light irradiation effects on prebaking and silicon epitaxial growth is studied. An ArF excimer laser, a KrF excimer laser, and a Hg-Xe lamp are used as light sources. The epitaxial growth is carried out using a SiH2Cl2/H2 system under reduced pressure. ArF radiation and Hg-Xe radiation are found to be effective for volatilizing native SiO2 on silicon-substrate surfaces even at low temperatures. When a substrate surface is irradiated with these UV radiations during prebaking and epitaxial growth, epilayer surface morphology and crystalline quality are much improved. Furthermore, the epitaxial growth rate seems to be enhanced photothermally by excimer laser radiations, and photochemically by Hg-Xe radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337983
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  • 16
    Electronic Resource
    Electronic Resource
    Polarized neutron scattering of D2O-based magnetic fluids (depolarization) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5849-5851 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetite colloidal fluid with a carrier fluid of deuterium oxide (D2O) was prepared to eliminate the incoherent scattering by hydrogen nucleons and the depolarization of cold neutrons was measured. The magnetic fluid was cooled down to 17 K in an external magnetic field of 10 kOe. The sample exhibited a finite residual magnetization Mr, which decreases with increasing temperature from 17 K. With elevating the temperature from 17 to 300 K, the depolarization was measured in three cases in which the directions of the beam, Mr, and polarization are mutually changed. The polarized neutrons transmitting through the sample were depolarized by the magnetic moments in the colloidal particles. The polarizations as a function of the product of Mr and neutron wavelength λ at different temperatures reduce to the same functional form. The model which shows that no interactions exist among the ferrous colloidal particles succeeds partly in explaining the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342232
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  • 17
    Electronic Resource
    Electronic Resource
    Development of a neutron spectrometer, counter telescope with thick radiator, for TFTR D-T experiments : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 920-922 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A ΔE-E type proton recoil telescope, called COTETRA, was developed and is presently being applied to TFTR D-T fusion experiments. Two types of COTETRA were prepared for this experiment. One set is used primarily for high-resolution measurements of the neutron energy and uses Si diode as an E detector (set A), while another set (set B) uses a plastic scintillator to attain high count-rate capability. Both sets of COTETRA have small physical dimensions and use fast NIM electronic modules for high neutron flux rate measurements. A data acquisition system has been developed for the TFTR CAMAC system. A calibration experiment has been performed using a D-T neutron generator. Energy resolution of 4.0% is obtained for set A. Set B is expected to work at a count rate of up to 104 cps, which corresponds to a neutron flux rate of ∼109 (n/cm2)/s at the detector position. Currently, both of them are installed under the multichannel neutron collimator of TFTR. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146207
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  • 18
    Electronic Resource
    Electronic Resource
    Structural study of defects induced during current injection to II–VI blue light emitter (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1208-1210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out structural studies of nonluminescent areas developed by current injection in ZnMgSSe alloy-based II–VI blue light emitting diodes by electroluminescence topography and transmission electron microscopy. The nonradiative regions, which spread out in the 〈100〉 direction during current injection, consist of a high density of dislocation dipoles and dislocation loops. The source of these defects is the preexisting stacking faults originating at the substrate/epilayer interface. The dipoles themselves are aligned along both of the 〈110〉 directions lying in the {111} plane. Their Burgers vectors were of the type (a/2)〈011〉 inclined at 45° to the (001) junction plane. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113238
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  • 19
    Electronic Resource
    Electronic Resource
    Rapid thermal oxidation of thin nitride dielectrics deposited on rapid thermal nitrided polycrystalline silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1313-1315 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter compares the effects of two different oxidation techniques, i.e., rapid thermal and conventional wet (steam) oxidations, on the dielectric breakdown and charge trapping characteristics of thin Si3N4 films deposited on rapid thermally nitrided polycrystalline silicon. Results show that, in addition to the low thermal budget, rapid-thermal-oxidized Si3N4 shows superior time-dependent dielectric breakdown characteristics in terms of reduced defect densities and improved film intrinsic properties. Compared to wet-oxidized dielectrics, suppressed charge trapping is observed for rapid-thermal-oxidized Si3N4 stacked dielectrics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107576
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  • 20
    Electronic Resource
    Electronic Resource
    Theory of pseudoclassical confinement and transition to L mode (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 3299-3303 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theory of the self-sustained turbulence is developed for resistive plasma in toroidal devices. Pseudoclassical confinement is obtained in the low-temperature limit. As temperature increases, the current diffusivity prevails upon resistivity, and the turbulence nature changes so as to recover the L-mode transport. Comparison with experimental observation on this transition is made. The Hartmann number is also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860626
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