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  • 11
    Electronic Resource
    Electronic Resource
    Thermally induced metastability in amorphous silicon thin-film transistors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2617-2619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal quenching on the characteristics of hydrogenated amorphous silicon thin-film transistors using amorphous silicon nitride as a gate insulator has been studied. We find that rapid quenching produces changes in the field-effect conductance which are completely reversed by annealing. Rapid quenching produces a decrease in the off conductance and an increase of the on conductance. The decrease of the off conductance is due to the increase of the dangling bond density. On the other hand, the increase of the on conductance can be explained as either the decrease of the interface state density between amorphous silicon and the silicon nitride or the decrease in source series resistance by thermal quenching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100176
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  • 12
    Electronic Resource
    Electronic Resource
    Microscopic origin of light-induced changes in hydrogenated amorphous silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1673-1675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light-induced changes in the stretching mode absorption of Si-H and Si-H2 have been studied for hydrogenated amorphous silicon (a-Si:H) films. The absorption below 2000 cm−1 decreases greatly, but a small change has been observed above 2100 cm−1. The magnitude of the overall change increases as the substrate temperature is lowered and little change is observed for a-Si:H films deposited at above 200 °C. The change in boron-doped a-Si:H is small compared with the undoped film deposited at the same substrate temperature. Based on experimental results, it is suggested that the hydrogen in the bulk of a-Si:H diffuses to the microvoids during light illumination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98539
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  • 13
    Electronic Resource
    Electronic Resource
    Increase of doping efficiency by light soaking in boron-doped hydrogenated amorphous silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1804-1806 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron-doped hydrogenated amorphous silicon deposited at 100 °C exhibits a decrease of dark conductivity and an increase of doping efficiency, simultaneously, during band-gap light illumination. We prove that these two effects are bulk effects and that their origins are different. The decrease in dark conductivity is due to the creation of dangling bonds. On the other hand, the increase in doping efficiency anneals out with an activation energy of 1.66 eV. The increase in stretching mode absorption of boron-hydrogen has been observed after light soaking for the amorphous silicon-boron alloy film, and this appears to be related with the increase in doping efficiency of boron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98528
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  • 14
    Electronic Resource
    Electronic Resource
    Effect of Cl incorporation on the performance of amorphous silicon thin film transistors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4081-4085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of Cl incorporation on the performance of amorphous silicon thin film transistors (a-Si:H(:Cl) TFTs). The off-state leakage current of a-Si:H(:Cl) TFTs under light illumination is much lower than that of a-Si:H TFTs, because the photoconductivity of a-Si:H(:Cl) is much lower than that of conventional a-Si:H. The a-Si:H(:Cl) films deposited between [SiH2Cl2]/[SiH4]=0.04 and[SiH2Cl2]/[SiH4]=0.12 show p-type conduction, leading to the much lower photoconductivity. The TFT using a-Si:H(:Cl) deposited with [SiH2Cl2]/[SiH4]=0.04 exhibits a field effect mobility of 0.41 cm2/V s and a threshold voltage of 5.56 V; however the off-state leakage current under light illumination is two orders of magnitude smaller than that of a conventional a-Si:H TFT. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366260
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  • 15
    Electronic Resource
    Electronic Resource
    Thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon. The room-temperature conductivity increases by two orders of magnitude compared with the annealed value just after fast cooling from above 180 °C. The decay of the excess conductivity follows (time)−1 behavior, which is independent of the temperature. We suggest a possible explanation based on the material inhomogeneity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102580
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  • 16
    Electronic Resource
    Electronic Resource
    Thermal equilibrium changes in diode structures of doped amorphous silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 250-252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal equilibration processes in diode structures of doped hydrogenated amorphous silicon have been studied. Fast cooling from above the thermal equilibrium temperature (TE) results in an increase in dark reverse current as well as in forward current. The reverse leakage current and the diode quality factor increase with quenching temperature at above TE. Therefore, it is concluded that the densities of metastable dangling bonds and active dopants increase upon fast cooling from above TE. We propose a new model to explain the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100980
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  • 17
    Electronic Resource
    Electronic Resource
    Creation of deep levels in horizontal Bridgman-grown GaAs by hydrogenation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 856-858 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of hydrogen plasma exposure on the deep levels in GaAs grown by the horizontal Bridgman method was studied. After hydrogenation at 250 °C for 3 h, the concentrations of the electron deep levels, such as the EL2 trap (Ec-0.81 eV), the EL3 trap (Ec−0.63 eV), and the EL6 trap (Ec−0.35 eV), decrease by one order of magnitude. On the other hand, three new electron traps at Ec −0.42 eV, Ec −0.54 eV, and Ec −0.94 eV are created. After rapid thermal annealing up to 550 °C for 10 s, these created traps are reduced and the deep levels decreased by hydrogenation recover nearly completely. This result reveals that the passivation and creation of deep levels by hydrogenation may be explained as the interaction of atomic hydrogen with an unsaturated bond of native defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100094
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  • 18
    Electronic Resource
    Electronic Resource
    Effect of boron incorporation on the light-induced effect in amorphous silicon solar cells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1401-1403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of light illumination on the photovoltaic performances of hydrogenated amorphous silicon (a-Si:H) n+-p-p+ solar cells has been investigated. The degradation increases as the doping concentration of p-type a-Si:H increases, and it decreases with increasing the substrate (or annealing) temperature. These results indicate that the light-induced degradation increases with the microvoid density in the material. The increase of conversion efficiency has been observed for a-Si:H n+-p-p+ cells after light exposure, and this is due to the increase of doping efficiency for p-type a-Si:H during light illumination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99128
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  • 19
    Electronic Resource
    Electronic Resource
    Polycrystalline silicon produced by Ni–silicide mediated crystallization of amorphous silicon in an electric field (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3099-3101 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystallization of amorphous silicon (a-Si) by Ni–silicide mediated crystallization (SMC) has been studied in an electric field with Ni area density between 3.3×1013 and 5.7×1014 atoms/cm2 on the a-Si. The needlelike crystallites of ∼1000 Å in width and several micron length grow in the 〈111〉 directions with the 〈011〉 normal to the film surface when Ni area density was between 5.1×1013 and 2.9×1014 atoms/cm2. However, dendritic crystallites have been found in the a-Si matrix without complete crystallization of the a-Si when the Ni area density was 3.3×1013 atoms/cm2. The field-effect mobility of the thin-film transistor using the SMC poly-Si was 60–112 cm2/V s when the average Ni bulk density in the poly-Si was around 3.0×1018 atoms/cm3, and it decreases with increasing Ni density. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1286064
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  • 20
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoconductivity and recombination in hydrogenated amorphous silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6591-6593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination processes in undoped hydrogenated amorphous silicon under steady-state illumination have been studied in order to explain the temperature dependences of photoconductivity. The recombinations of free carriers through the exponential tail states and through the Gaussian distributed dangling bond states were calculated in terms of the Shockley–Read theory and the occupation statistics of correlated defects. An additional recombination of trapped electrons and holes in the tail states through the dangling bonds by tunneling should be included in order to explain the experimental data of the activated photoconductivity at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342038
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