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  • 11
    Electronic Resource
    Electronic Resource
    InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1713-1719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm2, respectively. This result is achieved by the introduction of H2 into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ΔEc is estimated to be 0.43 of the band-gap difference ΔEg. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 °C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm2. cw operation is also achieved in the MQW laser diodes at −125 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338067
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  • 12
    Electronic Resource
    Electronic Resource
    Refractive indices of In0.49Ga0.51−xAlxP lattice matched to GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 985-986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractive indices of In0.49Ga0.51P, In0.49Al0.51P, and In0.49Ga0.29Al0.22P, lattice matched to GaAs grown by molecular-beam epitaxy, are determined from double-beam reflectance measurements for photon energies ranging from 0.6 to 1.3 eV. Variation of the In0.49Ga0.51−xAlxP, refractive index with Al composition x and photon energy is calculated according to the single-effective-oscillator model. These analytical results are then compared with experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336581
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  • 13
    Electronic Resource
    Electronic Resource
    Improvements of electrical and optical properties of InAlAs grown by molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3262-3264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Great improvement in the electrical and optical properties of molecular-beam-epitaxy-grown InAlAs was obtained by using InP buffer layers and high substrate temperatures of 555 °C. Undoped InAlAs layers are n type and the highest room temperature electron mobility is as high as 5100 cm2/V s with a carrier concentration of 1×1015 cm−3. The room-temperature photoluminescence spectrum has a sharp edge emission with a spectral half-width as narrow as 42 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335785
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  • 14
    Electronic Resource
    Electronic Resource
    Saturation of multiplication factor in InGaAsP/InAlAs superlattice avalanche photodiodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1122-1124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The saturation of the multiplied photocurrent at an intense illumination was studied for InGaAsP/InAlAs superlattice avalanche photodiodes. The dependence of the multiplication factor on the illumination intensity is small in comparison with conventional bulk APDs because the ionization rate ratio is larger. The multiplication factor decreases at an intense illumination mainly because of the space charge effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108762
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