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  • 11
    Electronic Resource
    Electronic Resource
    Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5657-5660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selected area electron diffraction pattern and high-resolution transmission electron microscopy measurements on a ZnTe/ZnSe heterointerface grown on a GaAs(001) substrate showed two structures of the CuPtB-type ordering structures, one for each direction of the doublet periodicity on the {111} lattice planes along the [110] axis, and superstructure spots related to CuAu-I-type ordering. Auger electron spectroscopy measurements showed that the Se atoms were interdiffused into the ZnTe thin film and that the diffused Se atoms formed a ZnSexTe1−x layer, which might be related to the coexistence of the two types of ordered structures. The coexisting behavior of the two ordered structures are discussed. The present results can help improve the understanding of the formation mechanism and the coexisting behaviors of the two ordered structure near the ZnTe/ZnSe heterointerface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459744
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  • 12
    Electronic Resource
    Electronic Resource
    Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1−xAs/GaAs heterostructures (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5195-5199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructural and the optical properties of InAs/GaAs quantum-dot (QD) arrays inserted into undoped GaAs barriers embedded in an AlxGa1−xAs/GaAs were investigated by using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images and the selected-area electron diffraction patterns showed that vertically stacked InAs QD self-assembled arrays were embedded in the GaAs barriers. The temperature-dependent PL spectra showed that the peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band of the InAs QDs shifted to lower energy with increasing temperature. The PL intensity of the InAs dots was significantly enhanced by the modulation-doped AlxGa1−xAs/GaAs heterostructure, and the thermal activation energy of the InAs dots was decreased by the addition of the modulation-doped AlxGa1−xAs/GaAs heterostructure. The present results can help to improve the understanding of the microstructural and the optical properties in InAs QD arrays inserted into GaAs barriers embedded in a modulation-doped AlxGa1−xAs/GaAs heterostructure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459752
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  • 13
    Electronic Resource
    Electronic Resource
    Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1166-1170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of strain relaxation on structural and optical properties of the InGaN/GaN multiple quantum wells (MQWs) with high indium composition grown by metalorganic chemical vapor deposition was investigated. From photoluminescence and transmission electron microscopy (TEM), we found that within the MQWs, the formation of misfit dislocation affects the degradation of optical properties more than the formation of stacking faults. For the MQWs with indium composition above the critical indium composition on the formation of misfit dislocation, the position of the main emission peak is significantly affected by the increase of quantum well numbers compared to samples with indium composition below the critical indium composition. The origins of redshift by the increase of quantum well numbers is believed to be caused by the increase of indium segregation in the MQWs using high-resolution TEM and energy dispersive x-ray spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429765
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  • 14
    Electronic Resource
    Electronic Resource
    Electrical characteristics of barium titanate films prepared by laser ablation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2143-2145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The BaTiO3 ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are ε=200 and 1 MV/cm, respectively. The switching characteristics are Qc=0.66 μc/cm2, ts=0.1 ps, and J1=1.57 μA/cm2 at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO3 films is superior to the Ta2O5 dielectric films and is comparable to the lead-zirconate-titanate ferroelectric films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354744
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  • 15
    Electronic Resource
    Electronic Resource
    The effect of a ZnTe buffer layer on the structural and optical properties of the CdTe/ZnTe/GaAs strained heterostructures grown by temperature-gradient vapor-transport deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2388-2390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-mismatched CdTe epilayers on GaAs (100) substrates with and without ZnTe buffer layers were grown by the simple method of double-well temperature gradient vapor-transport deposition. X-ray diffraction measurements were performed to investigate the structural properties of the epitaxial layers. Photoluminescence and transmission electron microscopy measurements showed that the crystallinity of the CdTe epilayers grown on the GaAs substrates was remarkably improved using the ZnTe buffer. The strain of the CdTe layer was determined from photoreflectance measurements. These results indicated that the CdTe epitaxial films grown on GaAs substrates with the ZnTe buffer can be used for applications as buffer layers for the growth of HgxCd1−xTe and CdxZn1−xTe. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114556
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  • 16
    Electronic Resource
    Electronic Resource
    Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 237-242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structures of GaAs film on (001) Si substrate tilted ∼3° towards the [110] direction were investigated by the high-resolution transmission electron microscopy. GaAs films were grown by the molecular beam epitaxy (MBE) on the Si (001) substrate by a modified two-step process, in which amorphous GaAs buffer layers were grown first. High-resolution electron micrographs show that stacking faults (and/or microtwins) are preferentially formed on the tilted step-rich surface, whereas misfit dislocations are preferentially formed on the flat surface. However, the difference in the defect density on the two cross sections is small. Between the observed 90° edge and 60° misfit dislocations the density of the latter is higher irrespective of the substrate tilt. This occurrence is explained by the difference in distribution of initial nucleating islands between the present and the conventional two-step MBE techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347756
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  • 17
    Electronic Resource
    Electronic Resource
    The interfacial layer formation of the Al2O3/Si structures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 760-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of Al2O3 using Al(O-C3H7)3 and N2O via pyrolysis was investigated with the goal of producing Al2O3 epitaxial films on p-Si (100) substrates. Room-temperature capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3/p-Si interface were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap. Auger depth profiles demonstrated that the Al2O3/Si interface was not abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the Al2O3/Si interface and the formation of a polycrystalline Al2O3 thin film. These results indicated that the failure to form Al2O3 epitaxial films was due to the formation of an interfacial layer prior to the growth of the Al2O3 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355224
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  • 18
    Electronic Resource
    Electronic Resource
    Histidine Complexes of Molybdenum(V) and Molybdenum(VI) (1965)
    s.l. : American Chemical Society
    Inorganic chemistry 4 (1965), S. 385-388 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50025a028
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  • 19
    Electronic Resource
    Electronic Resource
    Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1370-1372 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pit formation in III-nitride heterostructures such as InGaN/GaN and AlGaN/GaN grown by metalorganic chemical vapor deposition was characterized by transmission electron microscopy. The pit formation related with V defects has been reported in the InGaN/GaN multiple quantum well with high In composition [Appl. Phys. Lett. 79, 215 (2001)]. In this letter, we found that the mechanism of pit formation strongly depends on the indium and aluminum compositions in InxGa1-xN and AlxGa1-xN layers, respectively. By increasing the indium composition, the origin of pits is changed from the vertex of threading dislocations to the stacking mismatch boundaries induced by stacking faults and the three-dimensional island growth at the initial stage due to the large lattice mismatch. By increasing the aluminum composition, the origin of the pits also varied from the surface undulation due to the elastic misfit strain to the vertex of threading dislocations. In addition, several inversion domains observed in III nitrides result in pit formation in the surface of films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454215
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  • 20
    Electronic Resource
    Electronic Resource
    Strain-induced diffusion in a strained Si1−xGex/Si heterostructure (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4157-4159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusivity of a strained heterostructure was theoretically investigated, and general diffusion equations with strain potential were deduced. There was an additional diffusivity by the strain potential gradient as well as by the concentration gradient. The strain-induced diffusivity was a function of concentration, and its temperature dependence was formulated. The activation energy of the strain-induced diffusivity was measured by high-resolution transmission electron microscopy. This result can be generally applied for the investigation of the diffusion in strained heterostructures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1327280
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