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  • 21
    Electronic Resource
    Electronic Resource
    Band-gap widening of CdO thin films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6174-6177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdO thin films were deposited on silica glass substrates by rf sputtering. The orientation of the crystal axis in the films was changed by varying the sputtering conditions. The (100)-oriented films were annealed under various conditions to change the carrier concentration. A blueshift of the optical absorption edge was observed as the carrier concentration increased, and band-gap widening was analyzed using the Burstein–Moss formula. We found that the intrinsic direct-band-gap Eg0 (Γ15–Γ1 gap) and the reduced effective mass mvc* are 2.22±0.01 eV and (0.274±0.013)m0, respectively, at room temperature. The results are discussed in relation to the band structure of CdO. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368933
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  • 22
    Electronic Resource
    Electronic Resource
    Preparation of Cd1−xYxSb2O6 thin film on glass substrate by radio frequency sputtering (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 406-408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xYxSb2O6 thin films were deposited onto a silica glass substrate by rf sputtering method. The highest conductivity observed for Cd0.95Y0.05Sb2O6 thin films was 4.1×10 S cm−1, with a carrier concentration of 1.3×1020 cm−3 and a Hall mobility of 1.9 cm2 V−1S −1. No distinct optical absorption band was observed from the visible to the infrared region. These observations show that Cd1−xYxSb2O6 thin films have characteristics of a transparent conductor, whose transparent wavelength region covers the near infrared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112316
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  • 23
    Electronic Resource
    Electronic Resource
    Colloid formation effects on depth profile of implanted Ag in SiO2 glass (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2050-2052 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ag+ ions of 150 keV were implanted into SiO2 glasses at room temperature to doses of 0.1–60×1016/cm2. Formation of Ag colloids in SiO2 glasses was observed by the cross-sectional transmission electron microscopy and optical absorption spectra. An anticorrelation is found between the Ag colloid size and the width of the Ag depth profile measured by Rutherford backscattering spectrometry. At low dose, the size of Ag colloids is small (〈10 nm in diameter) and the Ag depth profile is close to that of a simulation calculation. At increasing dose, small Ag colloids and/or Ag atoms aggregate to grow up to ∼40 nm and the width of the Ag depth profile is reduced to ∼50 nm, which is close to the above colloid size, indicating that the size of a Ag colloid particle controls the Ag depth profile. The size and shape of colloids are the keys which modify the optical properties by metallic ion implantation for applications such as optical isolators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110588
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  • 24
    Electronic Resource
    Electronic Resource
    Large third-order optical nonlinearity of nanometer-sized amorphous semiconductor: Phosphorous colloids formed in SiO2 glass by ion implantation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2747-2749 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports large nonlinear susceptibility χ(3) of nanometer-sized particles of amorphous phosphorus. Nanocomposites of amorphous red phosphorous colloid particles (3–5 nm in diameter) and SiO2 glasses have been fabricated by ion implantation technique. Silica glasses implanted at an acceleration voltage of 180 keV to a dose of 5×1017 P+ ions/cm2 shows χ(3) of ∼1×10−6 esu, which is comparable to quantum-sized crystals of semiconductors such as CuCl and CdS1−xSex. This is the first finding that quantum dots of amorphous semiconductors embedded in dielectrics exhibits such a large χ(3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108077
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  • 25
    Electronic Resource
    Electronic Resource
    Superconducting ceramics of Bi2Sr2Ca1Cu2Ox prepared by heating in a vacuum-sealed vessel (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2300-2302 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting ceramics in the Bi-Sr-Ca-Cu-O system have so far been prepared by heating in air or oxygen-containing atmosphere, but not in oxygen-free atmosphere such as vacuum or inert gas atmosphere. No one has reported converting the precursor (nonsuperconducting) ceramics sealed in an evacuated metal or glass pipe into superconducting ceramics. Metal or glass coated high Tc superconducting ceramics are in a great and strong demand for industrial uses; the coating is essential for protecting the ceramics for mechanical and chemical damage. We have found that as-cast specimens of the Ag2O-doped Bi2Sr2Ca1Cu2Ox melt prepared in air exhibit superconductivity (Tc≈85 K) after heat treatment in an evacuated and sealed silica glass tube. This finding indicates we are able to fabricate a desired shape of superconducting Bi2Sr2Ca1Cu2Ox ceramic sealed in glasses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107010
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  • 26
    Electronic Resource
    Electronic Resource
    Novel approach for synthesizing Ge fine particles embedded in glass by ion implantation: Formation of Ge nanocrystal in SiO2-GeO2 glasses by proton implantation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1632-1634 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-sized crystalline Ge colloid particles have been formed by implantation of protons into substrate glasses having a composition of 1 GeO2-9SiO2 to a fluence of 1×1018 cm−2 at an energy of 1.5 MeV at room temperature without post-thermal annealing. Intensities of the absorption band due to Ge particles reach a maximum at ∼30 μm from the surface and their depth profile is close to that of the electronic energy loss. No formation of Si particles was observed in SiO2 or SiO2:GeO2 glasses implanted with protons at the same conditions and fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112934
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  • 27
    Electronic Resource
    Electronic Resource
    Characteristics of 5-eV absorption band in sputter deposited GeO2-SiO2 thin glass films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 282-284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films (4.6 μm thick) of 5 GeO2-95 SiO2 and 55 GeO2-45 SiO2 (mol %) glasses were prepared by rf sputtering method in an Ar-O2 atmosphere. An intense absorption band at around 5 eV was distinctly observed in both films after the as-deposited films were annealed at 350 °C for 30 min in a vacuum. A part of this 5-eV band was gradually decreased by UV irradiation. Saturated absorptivity changes (−Δα∞) of the UV bleached component, which is considered to be the origin of Hill gratings [K. O. Hill, Y. Fujii, and B. S. Kawasaki, Appl. Phys. Lett. 32, 647 (1978)] and second-harmonic generation in SiO2 glass fibers doped with GeO2, after a prolonged irradiation were 50 cm−1 for 5 GeO2-95 SiO2 films and 400 cm−1 for 55 GeO2-45 SiO2 films. These values are greater by one or two orders of magnitude than those (∼2 cm−1) of bulk germanosilicate glasses prepared by the vapor axial deposition method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111181
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  • 28
    Electronic Resource
    Electronic Resource
    Preferred concentration enhancement of photobleachable defects responsible for 5 eV optical absorption band in SiO2:GeO2 glass preform by heating in a H2 atmosphere (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 479-481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heat treatment of a 5GeO2-95SiO2 glass preform in a H2 atmosphere at 500 °C for 70 h increased intensities of an absorption band centered at 5 eV by a factor of ∼3. Intensities of photobleachable component, which is the precursor of UV-induced Ge E' centers and assigned to a neutral oxygen monovacancy, of the 5-eV band were enhanced by a factor of ∼8 by heating. This increment is ∼3 times as large as that of UV-unbleachable component, which is assigned to Ge2+ centers coordinated by two oxygens (neutral oxygen divacancy).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110782
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  • 29
    Electronic Resource
    Electronic Resource
    Coalescence of nanosized copper colloid particles formed in Cu-implanted SiO2 glass by implantation of fluorine ions: Formation of violet copper colloids (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2613-2615 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorine ions were implanted at an energy of 40 keV at room temperature into Cu-implanted (160 keV, 6×1016 ions/cm2) SiO2 glass substrates in which implanted coppers occur in the form of nanosized metallic colloid particles with spherical shape. After the F implantation, the peak position of a band due to plasma oscillation shifted from 2.21 eV (562 nm) to 2.10 eV (591 nm) and the color changed from bulk copperlike to deep violet, visually. The bimodal distribution of depth Cu concentrations became distinct after the implantation. Cross-sectional transmission electron microscopy observation revealed that the distribution of copper colloid particles remains bimodal in shape and the particles coalesce with each other to form larger colloid particles with nonspherical shape. Fourier transform IR attenuated total reflection spectra showed that implanted F ions are incorporated in the form of O3Si-F units breaking continuity of the Si-O-Si network, suggesting that reduction of local viscosity in collision cascade regions during the implantation plays an important role in the observed coalescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106897
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  • 30
    Electronic Resource
    Electronic Resource
    Amorphous transparent electroconductor 2CdO⋅GeO2: Conversion of amorphous insulating cadmium germanate by ion implantation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2663-2665 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous 2CdO⋅GeO2 thin films (optical band gap determined by a Tauc plot; 3.4 eV) prepared by rf sputtering were implanted with H+ or Li+ ions to a dose of 2×1016 cm−2. Direct current conductivities in the specimens at 300 K were increased from 3×10−9 S cm−1 to ∼10 S cm−1 after the implantation. The conductivities in these implanted specimens remained almost constant down to 77 K. No deleterious coloring was perceived after implantation. The Hall mobilities (conduction type; n) in the implanted specimens at ∼300 K were ∼5 cm2 V−1 s−1, which are larger by several orders of magnitude than those in existing amorphous semiconductors. Such a large mobility indicates that the electronic state near the bottom of the conduction band of this amorphous material is extended. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114329
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