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  • 1
    Electronic Resource
    Electronic Resource
    Resolution limits of ion milling for fabricating Y1Ba2Cu3Ox nanostructures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2461-2463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process is described for fabricating 0.23-μm-wide lines in Y1Ba2Cu3Ox thin films where patterns are defined in a commercial, negative tone, epoxy-based resist by masked ion beam lithography and transferred to the superconducting film by argon ion milling. Lines in 80-nm-thick films had the same zero-resistance temperature (89 K) as the starting films, and a critical current density of 0.7×106 A/cm2 at 77 K, representing a threefold reduction from the starting value. A consistent interpretation of these results is that the line consists of a superconducting core 70 nm in width with the critical current density of the starting film and with 80-nm-wide nonsuperconducting sidewalls. The results were reproducible in lines which did not cross outgrowths in the superconducting film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351112
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of high quality YBa2Cu3O7−δ thin films over large areas by pulsed laser ablation with substrate scanning (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7182-7188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the transport and structural properties of YBa2Cu3O7−δ thin films deposited by pulsed laser ablation with computer-controlled substrate scanning. Films were deposited on LaAlO3 and SrTiO3 substrates covering a 2×3 cm area with thicknesses of 90 and 160 nm. The 90-nm thick films exhibited a thickness variation of ±8%, Tco = 90.7 ± 0.5 K, Jc = 4.8 ± 0.2 × 106 A/cm2 at 77 K, and a surface resistance (corrected for finite thickness) at 75 GHz of 10–12 mΩ at 77 K. For the 160-nm thick films, the thickness variation was 〈5%, Tco = 91.0 ± 0.3 K, Jc=5.4±0.4×106 A/cm2, and corrected surface resistance was 6–10 mΩ. X-ray diffraction showed that the c-axis mosaic in the films is closely related to that of the substrates and that the only in-plane defects are due to the expected twinning in the a-b plane of the film. The c-axis lattice constants were 1.1688±0.0004 nm. The above properties showed a high degree of uniformity across the substrate area and between films from different deposition cycles. The surface resistance values add significantly to the body of results which show that the temperature-scaled values for niobium can be equaled and perhaps surpassed by YBa2Cu3O7−δ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347611
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Doping of p-type shallow junctions using electron beam evaporation of boron layers for compatibility with complementary-metal-oxide-semiconductor technology (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 76-78 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam evaporation was used as a low-temperature deposition process of boron and boron/amorphous-silicon layers as dopant sources in rapid thermal diffusion. High efficiency of doping is attributed to high dopant supply from the boron layer to the silicon substrate. Oxygen ambient leads to layer consumption and thus opens possibility for the source removal after diffusion. Dopant activation results in high carrier concentration within the junctions. High concentrations of dopant cause generation of precipitates at the B/Si substrate interface but not at the B/Si cap interface. The process is compatible with the complementary-metal-oxide-semiconductor technology since the low temperature of the source deposition facilitates masking of the dopant by a patterned photoresist and its subsequent lift-off removal from the silicon surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114150
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  • 4
    Electronic Resource
    Electronic Resource
    Linewidth dependence of critical current density in Y1Ba2Cu3O7 thin-film microbridges (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1129-1131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the dependence of the transport critical current density (Jc) on the width of Y1Ba2Cu3O7 thin-film microbridges with widths down to 2 μm has been made. No evidence of edge pinning, which leads to larger Jc's in narrower microbridges, was found. Due to the limitation in resolution of photolithography encountered in common usage, a tapered or radiation damaged edge was always present, which may have introduced a significant error in the cross section and hence in the estimation of Jc. By normalizing the critical current (Ic) to the room-temperature resistance of the microbridge, we can eliminate this mask-defined cross-sectional error.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106366
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  • 5
    Electronic Resource
    Electronic Resource
    On choosing off-line automatic X-ray diffractometers (1968)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 1 (1968), S. 209-217 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The significance of the important crystallographic design requirements of three and four circle automatic diffractometers is described. The extent to which the various available diffractometers meet these requirements is presented in tabular form.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889868005364
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    A scattering curve for a spherically symmetrical ammonium ion (1966)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 21 (1966), S. 822-823 
    Details
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0365110X66003918
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature and spectral dependences of persistent photoconductivity in YBa2Cu3O x thin films (1994)
    Springer
    Journal of superconductivity 7 (1994), S. 743-746 
    Details
    ISSN: 1572-9605
    Keywords: Photoconductivity ; high-T c superconductors ; thin films ; spectral dependence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Temperature and spectral dependences of photoinduced changes of resistance were measured in YBa2Cu3O x thin films with oxygen content ranging as 6.35 〈x 〈 6.75. The absolute value of efficiency of initiation of photoinduced changes decreases with increase in oxygen content, but the position of peaks in the spectral dependence does not change with a change ofx. Temperature dependences of efficiency have an anomaly atT∽220 K, which is present in all the samples studied, and correlates with anomalies observed by other experimental techniques. Qualitatively similar temperature and spectral dependences of efficiency for the samples in both the insulating and metallic phases may be considered as an indication that the persistent photoconductivity effect in YBCO on both sides of the metal-insulator transition has a common origin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00721656
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