Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1982-1984
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We fabricated laterally confined GaAs–AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current–voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122342
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