ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solarblind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and95% of the breakdown voltage, the SPAD shows a low dark current of 57.2fA and 159fA,respectively. The quantum efficiency of 29.8% at 280nm and 〈0.007% at 400nm indicates a highUV-to-visible rejection ratio of 〉4300. Single photon counting measurement at 280nm shows that asingle photon detection efficiency of 2.83% with a low dark count rate of 22kHz is achieved at theavalanche breakdown voltage of 116.8V
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1203.pdf
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