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  • 2005-2009  (8)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Development of Ultra High Sensitivity UV Silicon Carbide Detectors (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1461-1464 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity,including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and singlephoton-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, SiCphoto-detectors show excellent sensitivity. The specific detectivity, D*, of SiC photodiodes aremany orders of magnitude higher than the D* of other solid state detectors, and for the first time,comparable to that of photomultiplier tubes (PMTs). SiC APDs have also been fabricated to pursuethe ultimate sensitivity. By operating the SiC APDs at a linear mode gain over 106, single photoncountingavalanche photodiodes (SPADs) in UV have been demonstrated
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1461.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    1836 V, 4.7 mΩ•cm〈sup〉2〈/sup〉 High Power 4H-SiC Bipolar Junction Transistor (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1417-1420 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper reports recent progress in the development of high power 4H-SiC BJTs basedon an improved device design and fabrication scheme. Near theoretical limit high blocking voltageof VCEO=1,836 V has been achieved for 4H-SiC BJTs based on a drift layer of only 12 μm, doped to6.7x1015 cm-3. The collector current measured for a single cell BJT with an active area of 0.61 mm2is up to IC=9.87 A (JC=1618 A/cm2). The collector current is 7.64 A (JC=1252 A/cm2) at VCE=5.9 Vin the saturation region, corresponding to an absolute specific on-resistance (RSP_ON) of 4.7 m9·cm2.From VCE=2.4 V to VCE= 5.8 V, the BJT has a differential RSP_ON of only 3.9 m9·cm2. The currentgain is about 8.8 at Ic=5.3 A (869 A/cm2). This 4H-SiC BJT shows a V2/RSP_ON of 717 MW/cm2,which is the highest value reported to date for high-voltage and high-current 4H-SiC BJTs. A verylargearea 4H-SiC BJT with an active area of 11.3 mm2 is also demonstrated
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1417.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    10 kV, 87 mΩcm〈sup〉2〈/sup〉 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1187-1190 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperatureapplications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TIVJFET)does not require epi-regrowth and is capable of high current density. In this workwe demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effecttransistors (TI-VJFET), based on 120μm, 4.9×1014cm-3 and 100μm, 6×1014cm-3 drift layers. Thecorresponding devices showed blocking voltage (VB) of 11.1kV and specific on-resistance (RSP_ON)of 124m7cm2, and VB of 10kV and RSP_ON of 87m7cm2. A record-high value for VB2/RSP_ON of1149MW/cm2 was achieved for normally-off SiC FETs
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1187.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1191-1194 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper reports recent progress in the development of a vertical JFET, the purely verticalJFET based on trenched-and-implanted vertical JFET (TI-VJFET) approach that eliminates the needof epitaxial regrowth at middle of device fabrication and the need of a merged lateral JFET to controlthe vertical JFET. Different structures have been designed to target breakdown voltages ranging from600V to 1.2kV. Vertical channel width uniformity has been studied, showing the feasibility ofachieving below 0.1um variation for reasonably flat wafers of good thickness uniformity. Pitch size ofthe designs has been reduced compared to early report. Gate trench width has been reduced from3.8um to 2.3um, aimed at increasing the device current capability. Fabricated device cells have beentested and packaged into multi-cell 30A TI-VJFETs which have been characterized of DC andswitching characteristics at room and elevated temperatures. Very fast current rise/fall times of 〈10nswere observed from RT to 200°C. PSpice model for TI-VJFET has been developed and applied to theperformance prediction of 3-phase SiC power inverter, suggesting a high efficiency 97.7% at 200°Cjunction temperature without using soft-switching scheme. Preliminary experimental demonstrationof a PWM-controlled three-phase inverter based on SiC TI-VJFET power board is reported
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1191.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    1600 V, 5.1 mΩ●cm〈sup〉2〈/sup〉 4H-SiC BJT with a High Current Gain of β=70 (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 1155-1158 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper reports a newly achieved best result on the common emitter current gain of4H-SiC high power bipolar junction transistors (BJTs). A fabricated 1600 V – 15 A 4H-SiC powerBJT with an active area of 1.7 mm2 shows a high DC current gain (b) of 70, when it conducts 9.8 Acollector current at a base current of only 140 mA. The maximum AC current gain (DIC/DIB) is up to78. This high performance BJT has an open base collector-to-emitter blocking voltage (VCEO) of over1674 V with a leakage current of 1.6 μA, and a specific on-resistance (RSP-ON) of 5.1 mW.cm2 when itconducts 7.0 A (412 A/cm2) at a forward voltage drop of VCE = 2.1 V. A large area 4H-SiC BJT witha footprint of 4.1 mm x 4.1 mm has also shown a DC current gain over 50. These high-gain,high-voltage and high-current 4H-SiC BJTs further support a promising future for 4H-SiC BJTapplications
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1155.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 947-950 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. TheJBS diodes based on a 45μm thick, 1.4×1015cm-3 doped drift layer with multiple non-uniform spacingguard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has aforward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP_ON) of 25.2mW·cm2,which is very close to the theoretical RSP_ON of 23.3mΩ·cm2. DC I-V measurement of packaged JBSdiodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a busvoltage up to 2.5kV was used to characterize the high power switching performance of SiC JBSdiodes. A large inductance load of 1mH was used to simulate the load of a high power AC inductionmotor. Compared to a Si PIN diode module, the SiC JBS package reduces diode turn-off energy lossby 30% and Si IGBT turn-on energy loss by 21% at room temperature
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.947.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Development of High Temperature Lateral HV and LV JFETs in 4H-SiC (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 1091-1094 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A series of high voltage (HV) and low voltage (LV) lateral JFETs are successfullydeveloped in 4H-SiC based on the vertical channel LJFET (VC-LJFET) device platform.Both room temperature and 300 oC characterizations are presented. The HV JFET shows aspecific-on resistance of 12.8 mΩ·cm2 and is capable of conducting current larger than 3 A atroom temperature. A threshold voltage drop of about 0.5 V for HV and LV JFETs is observedwhen temperature varies from room temperature to 300 oC. The measured increase ofspecific-on resistance with temperature due to a reduction of electron mobility agrees withthe numerical prediction. The first demonstration of SiC power integrated circuits (PIC) isalso reported, which shows 5 MHz switching at VDS of 200 V and on-state current of 0.4 A
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1091.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    4H-SiC Single Photon Avalanche Diode for 280nm UV Applications (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 1203-1206 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solarblind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and95% of the breakdown voltage, the SPAD shows a low dark current of 57.2fA and 159fA,respectively. The quantum efficiency of 29.8% at 280nm and 〈0.007% at 400nm indicates a highUV-to-visible rejection ratio of 〉4300. Single photon counting measurement at 280nm shows that asingle photon detection efficiency of 2.83% with a low dark count rate of 22kHz is achieved at theavalanche breakdown voltage of 116.8V
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1203.pdf
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