Bibliothek

Sprache
Bevorzugter Suchindex
Ergebnisse pro Seite
Sortieren nach
Sortierung
Anzahl gespeicherter Suchen in der Suchhistorie
E-Mail-Adresse
Voreingestelltes Exportformat
Voreingestellte Zeichencodierung für Export
Anordnung der Filter
Maximale Anzahl angezeigter Filter
Autovervollständigung
Feed-Format
Anzahl der Ergebnisse pro Feed
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1783-1785 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3224-3226 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104 cm−2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 85-87 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Molecular beam epitaxy of Si1−xGex alloys, using gaseous Si2H6 and solid Ge as sources, has been studied over the entire composition range (0≤x≤1). From the measured growth rates as a function of x, it is clear that the presence of Ge tends to decrease the Si incorporation rate. This establishes growth via adatom migration to kink sites in a dissociative chemisorption process. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 4
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: Electrically induced fatigue crack growth is an important degradation mechanism for ferroelectric devices. Reliability concerns for ferroelectric devices place stringent demands for ferroelectric materials. In situ observation of electrically induced fatigue crack growth was carried out for ferroelectric single crystals under alternating electric field. Electrically induced fatigue crack growth was observed both below and above the coercive field. Crack closure and open behavior were observed together with 90° ferroelectric domain switching during the electric cycling. The crack propagation behavior is a repeated process of continuous but small increments followed by a sudden increase in the crack length. It was suggested that the electric boundary condition along the crack face, from its mouth to its tip, is a variation from the impermeable to the permeable state. The gradual attainment of an impermeable crack tip after an incubation period of field cycling causes the observed jump in crack propagation.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    Digitale Medien
    Digitale Medien
    Springer
    The European physical journal 17 (2000), S. 367-370 
    ISSN: 1434-6036
    Schlagwort(e): PACS. 75.10.Jm Quantized spin models - 11.30.-j Symmetry and conservation laws - 75.40.Mg Numerical simulation studies
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract: In order to understand the properties of Mott insulators with strong ground state orbital fluctuations, we study the zero temperature properties of the SU(4) spin-orbital model on a square lattice. Exact diagonalizations of finite clusters suggest that the ground state is disordered with a singlet-multiplet gap and possibly low-lying SU(4) singlets in the gap. An interpretation in terms of plaquette SU(4) singlets is proposed. The implications for LiNiO2 are discussed.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 6
    Digitale Medien
    Digitale Medien
    Springer
    The European physical journal 69 (1988), S. 443-447 
    ISSN: 1434-6036
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Based on a simple argument, it is shown that a small concentration of holes in a single band Hubbard Hamiltonian on a quadratic lattice with moderateU/t ratio is enough to destroy the long range antiferromagnetic order in the ground state. The particular emphasis is made on the role of large amplitude zero-point quantum spin fluctuations inherent in low-dimensional spin system with the small magnitude of spinS=1/2. The relevance to the highT c superconductivity materials La2−x Sr x CuO4 is discussed.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    Digitale Medien
    Digitale Medien
    Springer
    Journal of low temperature physics 95 (1994), S. 299-308 
    ISSN: 1573-7357
    Schlagwort(e): 75.10 ; 74.20 ; 74.72
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The key elements in all known cuprate superconductors are lightly doped CuOi-planes. Recently a new homologous series of compounds Srn−1Cun+1O2n have been reported in which the planes contain a parallel array of line defects which form a trellis lattice with ladder-segments of the square lattice weakly coupled through triangular line defects. The width of the ladder segments is determined by the parameter n and varies from single chains to arbitrarily wide ladders. The magnetic properties of undoped compounds will be dominated by the properties of the ladders. Heisenberg s = 1/2 ladders can have a spin liquid groundstate with a spin gap if the number of rungs is odd so that a short range RVB groundstate is predicted for such trellis lattices. Using a t-J model to describe the doped material leads to the prediction of a d-wave RVB superconducting groundstate with a large spin gap.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...