Electronic Resource
Luo, H.
;
Samarth, N.
;
Zhang, F. C.
;
[et al.]
Pareek, A.
;
Dobrowolska, M.
;
Furdyna, J. K.
;
Mahalingam, K.
;
Otsuka, N.
;
Chou, W. C.
;
Petrou, A.
;
Qadri, S. B.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1783-1785
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105090
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