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  • 1
    Electronic Resource
    Electronic Resource
    Proton implantation intermixing of GaAs/AlGaAs quantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3099-3102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated proton implantation enhanced intermixing of GaAs/AlGaAs quantum wells for H+ doses ranging from 5×1013 to 1×1016 ions/cm2. Implantation of 20 keV H+ followed by a high temperature rapid thermal anneal leads to enhanced diffusion of Al into the GaAs quantum well. Shifts of electron–heavy hole recombination energies due to compositional changes were observed using room temperature cathodoluminescence. Diffusion lengths of longer than 2 nm were calculated from energy shifts in a 5 nm well and were found to vary with both implanted dose and anneal time, as expected if the enhanced interdiffusion is caused by implantation introduced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354575
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  • 2
    Electronic Resource
    Electronic Resource
    Transport critical current density and microstructure in extruded YBa2Cu3O7−x wires processed by zone melting (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 228-232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x compounds were extruded into long wires with the diameter of 1 mm after sintering. The sintered wires were subsequently zone melted to develop a highly textured microstructure. Magnetization experiments at 77 K indicated a Jc value of 1×105 A/cm2 at 1 T. Transport measurements at 77 K showed a greatly enhanced field dependence of the critical current density. Transmission electron microscopy revealed an important grain-boundary feature which eliminated the weak-link behavior. Large amounts of dislocations have also been found in the zone-melted sample which may contribute to flux pinning in the system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347122
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of the magnetic properties of Co/Pd multilayered films on the structural parameters estimated accurately by x-ray diffraction (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4986-4988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, Co/Pd multilayered films with a few atomic layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The structural parameters were estimated accurately making use of only the angular positions of x-ray diffraction peaks. The magnetic properties were found to vary greatly depending on Pd predeposition and Pd-sublayer thicknesses as well as Co-sublayer thickness. The Pd-predeposited films were found to have a remarkably high coercivity of 4723 Oe and a greatly enhanced interfacial magnetic anisotropy of 0.72 mJ/m2, which indicates an excellent potential as a magneto-optical recording medium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352021
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and electrical characterization of microcrystalline silicon films prepared by a layer-by-layer technique with a plasma-enhanced chemical-vapor deposition system (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1676-1680 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcrystalline silicon films have been prepared on indium-coated glass utilizing a layer-by-layer technique with a plasma-enhanced chemical-vapor deposition system. The microcrystalline films were fabricated by varying the number of cycles from 10 to 60 under a fixed H2 time (t2) of 120 s, where the corresponding deposition time (t1) of amorphous silicon thin film was 60 s. Structural properties, such as the crystalline volume fraction (Xc) and grain sizes were analyzed by using Raman spectroscopy and a scanning electron microscopy. The carrier transport was characterized by the temperature dependence of dark conductivity, giving rise to the calculation of activation energy (Ea). Optical energy gaps (Eg) were also investigated using an ultraviolet spectrophotometer. In addition, the process under different hydrogen plasma time (t2) at a fixed number of 20 cycles was extensively carried out to study the dominant role of hydrogen atoms in layer-by-layer deposition. Finally, the correlation between structural and electrical properties has been discussed on the basis of experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372076
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  • 5
    Electronic Resource
    Electronic Resource
    The effects of mixing molecular gases on plasma parameters in a system with a grid-controlled electron temperature (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 1025-1028 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma parameter variations as a function of a mixing ratio in an electron temperature control system using a grid are investigated. Under the grid, the electron temperature, as well as electron density, is a strong function of a mixing ratio. The electron temperature decreases with a mixing ratio of molecular gases (O2 and CF4), and the large inelastic cross section of molecular gas is the reason for the decrease in the electron temperature. When the length of sheath around the grid wires is comparable to the space between the grid wires, only 10% mixing of CF4 decreases the electron temperature to 0.8 eV in 10 mTorr Ar/CF4 plasma. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436129
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of substrate bias voltage on plasma parameters in temperature control using a grid system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 4246-4250 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we investigate the effects of substrate bias voltage on plasma parameters in temperature control using a grid system in inductively coupled plasma. Electron temperature can be controlled from 2.5 eV to 0.5 eV at 1 mTorr Ar plasma using grid bias voltage, and the electron temperature is a strong function of substrate bias voltage. The main control parameter determining the electron temperature is the potential difference between grid-biased voltage and the plasma potential in the temperature controlled region (ΔφII,g). When substrate bias voltage is negative, plasma parameters do not vary with substrate bias voltage due to constant ΔφII,g © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1395571
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  • 7
    Electronic Resource
    Electronic Resource
    Experimental determination of the refractivity virial coefficients of atomic gases (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 2308-2318 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Values of the second refractivity virial coefficients BR of the atomic gases He, Ne, Ar, Kr, and Xe have been measured with a recently improved differential-interferometric technique to a high degree of accuracy. This device basically consists of two coupled grating interferometers. One interferometer, with two similar cells in series, measures differentially the higher-order effects of density while the second interferometer, with two similar cells in parallel, simultaneously measures the absolute value of the refractive index. In the range of pressure investigated (up to 40 MPa), the third refractivity virial coefficient CR becomes significant for the gases Ar, Kr, and Xe and the fourth refractivity virial coefficient DR becomes significant for Xe. The agreement between our experimental BR and the theoretical prediction based on the classical dipole–induced-dipole model is fairly good for Ar, Kr, and Xe but poor for He and Ne. For He and Ne, however, good agreement is obtained when a semiclassical approach is used. Accurate values of the first refractivity virial coefficients AR were determined independently by making absolute measurements of the refractive index as a function of pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464212
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  • 8
    Electronic Resource
    Electronic Resource
    Pressure and helium mixing effects on plasma parameters in temperature control using a grid system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 3498-3501 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure and He mixing effects on plasma parameters in electron temperature control using a grid system are investigated. Electron temperature is higher in lower pressure, when the electron temperature is high and not controlled. Electron density can be increased by about three times by decreasing the source gas pressure from 20 to 1 mTorr, and by about two times by He mixing in the temperature controlled region (diffusion region), while the electron density is decreased in the source region. This electron density increase is mainly due to the increase of the high energy electron population, and the measured electron energy distribution functions clearly show this. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377861
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  • 9
    Electronic Resource
    Electronic Resource
    Electron temperature control with grid bias in inductively coupled argon plasma (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 1017-1028 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of controlling electron temperature with grid-biased voltage is studied experimentally and the relevant physics is discussed in an inductively coupled Ar discharge. To obtain the electron density and electron temperature, the electron energy distribution functions (EEDFs) are measured with a Langmuir probe. As the grid voltage decreases negatively, the effective electron temperature is controlled from 2.0 to 0.6 eV and the electron density changes from 3×1010 to 2×1010 cm−3 in the diffusion region, while the effective electron temperature and electron density are not changed in the source region. The dependence of such various parameters, as electron density, electron temperature, plasma potential in each region, and so on, on the applied voltage, is presented. The functional relations between the measured physical quantities are well explained based on a global particle and energy balance relations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873342
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  • 10
    Electronic Resource
    Electronic Resource
    High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1189-1194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma-induced damage of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) has been studied in terms of forward turn-on and reverse breakdown voltages, together with etch rate and surface morphology. The physical degradation of sidewall along with rough surface morphology of n–GaN caused by increased ion scattering induced the deterioration of the forward and reverse voltages. The forward turn-on voltage was relatively independent of the pressure up to 20 mTorr. The reverse breakdown voltage showed the worst degradation at 75% Cl2 mainly because of a sidewall contamination. It was found that the turn-on voltage is sensitive to the surface roughness of the etched n–GaN and the breakdown voltage is strongly affected by the sidewall contamination. Annealing under nitrogen after the mesa etching improved the electrical properties of the InGaN/GaN MQW LEDs. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491585
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