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  • 1
    Electronic Resource
    Electronic Resource
    Grain boundary electrical barriers in positive temperature coefficient thermistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2909-2913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistance–temperature, current–voltage, and capacitance–voltage characteristics have been measured in niobium-doped barium titanate bicrystals. The analysis by device simulation reveals that potential barrier with a semiconductor–insulator–semiconductor structure can consistently interpret the observed characteristics rather than the double Schottky barrier. Absence of sub-ohmic behavior in the current–voltage characteristics and excess low-frequency capacitance at zero bias are caused by the spatially distributed traps at the insulating layer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371140
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  • 2
    Electronic Resource
    Electronic Resource
    Orientational relationship between cubic boron nitride and hexagonal boron nitride in a thin film synthesized by ion plating (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3551-3553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cubic boron nitride (c-BN) thin films synthesized by the ion-plating method were examined by high-resolution electron microscopy. It was found that the {0002} planes of hexagonal boron nitride (h-BN) at the boundaries of c-BN grains preferred to nucleate almost parallel to {111} planes of c-BN. Cross-sectional observation in the initial stage of growth showed that the c-BN can grow on top of the prismatic planes and the {0001} basal planes of h-BN, keeping the parallelism of the (111)c-BN to (0001)h-BN. A few degrees deviation (∼4°) between h-BN {0002} planes and c-BN {111} planes was frequently found in the film. The nucleation mechanism of c-BN was discussed analogous to that of diamond on graphite. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114918
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  • 3
    Electronic Resource
    Electronic Resource
    Initial growth mechanism of a/b-axis oriented YBa2Cu3O7−y film prepared by liquid phase epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2002-2004 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The a/b-axis oriented YBa2Cu3O7−y (YBCO) films were fabricated by liquid phase epitaxy (LPE) on NdGaO3 (110) single-crystalline substrates using a modified top-seeded solution growth method. The x-ray diffraction measurement, and transmission electron microscopic observation showed the epitaxial growth of YBCO film on the substrate. Scanning electron microscopic observation revealed the epitaxy of YBCO on the substrate and an initial growth mechanism of a/b-axis oriented YBCO film by LPE. The film growth consists of the following stages; (1) nucleation and island growth, (2) lateral growth of island, and (3) layer formation due to coalescence of island. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115618
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  • 4
    Electronic Resource
    Electronic Resource
    Critical currents of YBa2Cu3Oy thick films prepared by liquid phase epitaxial growth (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1714-1716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have succeeded in preparing c-axis oriented high-Jc YBa2Cu3Oy films on MgO(100) substrate by the liquid phase epitaxy (LPE) technique. The growth rate was typically about 2 μm/min, which was 10–102 times larger than that by ordinary vapor growth techniques. The film thickness ranged 10–50 μm by choosing the dipping time. The Tc of the best film exceeded 88 K after oxygen annealing, and the transport Jc was 1.1×105 A/cm2 at 77 K and 0 T. In-field Jc's at 77 K and 1.5 T were 2.8×104 A/cm2 and 2.0×104 A/cm2 for the B⊥ab plane and B(parallel)ab plane, respectively. In addition, the peak effect of Jc was observed at several tesla for B(parallel)ab plane geometry. Based on the microstructure observed by high resolution transmission electron microscopy, the relevant peak effect is considered to be caused by stacking faults which act as a field induced pinning center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112895
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  • 5
    Electronic Resource
    Electronic Resource
    Transmission electron microscopic study of c -BN films deposited on a Si substrate (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1478-1480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructure of c-BN films synthesized by the ion-plating method were observed and characterized by high resolution electron microscopy and microdiffraction. The c-BN films of ∼0.2 μm thickness were deposited on top of ∼0.05 μm of h-BN, which was oriented with its c-axis parallel to the substrate. Lattice image taken along the 〈011〉 direction showed that c-BN film was well crystallized with an interplanar distance ∼2.1 A(ring), although the grain size was extremely small, from 5 to 20 nm. Further, the microdiffraction pattern along the 〈011〉 direction by focusing the electron beam to ∼20 A(ring), clearly showed that the small grains consisted of a single crystal of c-BN. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113660
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  • 6
    Electronic Resource
    Electronic Resource
    Direct observation of hexagonal boron nitride at the grain boundary of cubic boron nitride by high resolution electron microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2490-2492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cubic boron nitride (c-BN) film deposited on a Si substrate was observed by high resolution electron microscopy. Thin layers, 1–2 nm, of hexagonal boron nitride (h-BN) phase were often found at the boundaries of c-BN grains. The observed interplanar spacing was about 0.33 nm, which coincided with that of the (0002) plane of h-BN. The nucleation mechanism of c-BN film is briefly discussed based on the formation of the h-BN phase at the grain boundaries. The existence of the h-BN phase at the boundaries of c-BN grains may be the reason for the occurrence of compressive stress and cracks in c-BN thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113142
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  • 7
    Electronic Resource
    Electronic Resource
    Lattice Strain and Dislocations in Polished Surfaces on Sapphire (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Polishing of ceramics, surface defects and strain are introduced that influence the mechanical properties in the final products. In this study, the sapphire surfaces with a-plane and c-plane were polished using several kinds of diamond slurry, and the introduced damaged zones were investigated using transmission electron microscopy (TEM), high-resolution TEM, and TEM-CBED (convergent beam electron diffraction). It was found that the types of slip systems and strain distribution were different between the a-plane-polished and the c-plane-polished specimens. That is, the basal slip and the prism slip were mainly activated in the c- and a-plane-polished specimens to form the different damaged zones. This difference was probably due to the difference in the direction and angle from the slip plane and applied shear stress during the polishing. On the basis of these observations, the types of introduced dislocations and distribution of strain were discussed to clarify the mechanism of polishing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00398.x
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  • 8
    Electronic Resource
    Electronic Resource
    Direct Characterization of Grain-Boundary Electrical Activity in Doped (Ba0.6Sr0.4)TiO3 by Combined Imaging of Electron-Beam-Induced Current and Electron-Backscattered Diffraction (2004)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Simultaneous measurements of remote electron beam induced current (REBIC) and orientation imaging microscopy (OIM) in a scanning electron microscope (SEM) have been applied to a polycrystalline (Ba0.6Sr0.4)TiO3 with a positive temperature coefficient of resistivity (PTCR) to elucidate a grain-boundary character dependence of the potential barrier formation. The absence of electrical activity in a coherent Σ3 twin boundary is clearly imaged. The resistivity of individual grain boundaries estimated from a resistive contrast image is interpreted in terms of geometrical coherency, which is defined by the degree of coincidence in the reciprocal lattice points.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.01153.x
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  • 9
    Electronic Resource
    Electronic Resource
    Current–Voltage Characteristics of Cobalt-Doped Inversion Boundaries in Zinc Oxide Bicrystals (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Undoped and cobalt-doped basal inversion boundaries were fabricated in ZnO bicrystals to investigate their current–voltage characteristics. High-resolution transmission electron microscopy observations and energy-dispersive X-ray spectroscopy analyses for a cobalt-doped bicrystal revealed that the boundary was highly coherent and free from intergranular phases and precipitates, but a certain amount of cobalt was present near the boundary. The cobalt-doped bicrystals exhibited nonlinear characteristics that depended on cooling rates from annealing temperature, in contrast to linear characteristics of the undoped bicrystals. It is suggested that the presence of cobalt impurities enhances the formation of acceptor-like native defects near the boundaries to generate electrostatic potential barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03526.x
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  • 10
    Electronic Resource
    Electronic Resource
    Cubic-Formation and Grain-Growth Mechanisms in Tetragonal Zirconia Polycrystal (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The microstructure in Y2O3-stabilized tetragonal zirconia polycrystal (Y-TZP) sintered at 1300°–1500°C was examined to clarify the role of Y3+ ions on grain growth and the formation of cubic phase. The grain size and the fraction of the cubic phase in Y-TZP increased as the sintering temperature increased. Both the fraction of the tetragonal phase and the Y2O3 concentration within the tetragonal phase decreased with increasing fraction of the cubic phase. Scanning transmission electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDS) measurements revealed that cubic phase regions in grain interiors in Y-TZP generated as the sintering temperature increased. High-resolution electron microscopy and nanoprobe EDS measurements revealed that no amorphous layer or second phase existed along the grain-boundary faces in Y-TZP and Y3+ ions segregated at their grain boundaries over a width of ∼10 nm. Taking into account these results, it was clarified that cubic phase regions in grain interiors started to form from grain boundaries and the triple junctions in which Y3+ ions segregated. The cubic-formation and grain-growth mechanisms in Y-TZP can be explained using the grain boundary segregation-induced phase transformation model and the solute drag effect of Y3+ ions segregating along the grain boundary, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03483.x
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