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  • 1
    Electronic Resource
    Electronic Resource
    Disorder/order/disorder Ga0.5In0.5P visible light-emitting diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5420-5422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new Ga0.5In0.5P light-emitting diode (LED) with order/disorder/order (DOD) structure has been fabricated by metalorganic chemical vapor deposition. Growth temperature and dopant concentration were successfully used as growth parameters to obtain a heterojunction-equivalent structure. From the 77 K photoluminescence measurement, three peak energies of the DOD structure can be resolved clearly. It is shown that the DOD structure is equivalent to the double-heterojunction structure. The wavelength of the LED occurring at 667 nm coincides with the ordered active layer emission. The light intensity of the DOD LED is seven times stronger as compared with that of the homojunction disordering LED at the injection current of 10 mA. These results demonstrate that the DOD structure can provide good electrical and optical confinements and can be served as heterojunction-equivalent applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351982
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  • 2
    Electronic Resource
    Electronic Resource
    Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1513-1516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes (LEDs) has been reported. The GaInP LEDs were fabricated on GaAs substrates at 675 and 730 °C by metalorganic chemical vapor deposition, with ordered and disordered structures. A sample with an ordered structure shows anomalous device performance, where emitting wavelength change, low light intensity, and early saturation were observed from the current-light intensity relationship. From the current-voltage measurement, it was found that the sample with ordered structure also yields an inferior diode performance. These phenomena could be due to the existence of antiphase boundaries in the ordered structures. The antiphase boundaries can act as generation-recombination centers and result in the anomalous behavior of the ordered GaInP LED.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351220
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  • 3
    Electronic Resource
    Electronic Resource
    Indium phosphide on silicon heteroepitaxy: Lattice deformation and strain relaxation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3338-3342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice deformation and strain relaxation in epitaxial InP directly on (001) Si are studied as a function of layer thickness using x-ray diffraction and photoluminescence (PL) techniques. The heteroepilayers were grown by low-pressure organometallic vapor-phase epitaxy and showed good quality. We find that mismatch-induced compressive strains are still present in InP layers with a thickness less than 1 μm. The rate of strain release is much lower than the prediction based on the equilibrium theory. With increasing thickness above 1.1 μm, the InP/Si layers suffer in-plane tensile strains as a result of differential thermal contraction during the cooling process after growth. Fairly good agreement is found between the PL and x-ray data for the strain variations in the InP/Si heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346386
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  • 4
    Electronic Resource
    Electronic Resource
    Nitrogen-doped ZnSe with selenium-rich growth by low-pressure organometallic chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7821-7824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-quality nitrogen-doped p-type ZnSe epilayer on (100) GaAs substrate was obtained under selenium-rich growth conditions by low-pressure organometallic chemical vapor deposition. Ammonia was used as the dopant source. The resistivity (0.5 Ω cm) and the free-carrier concentration (p=8.8×1017 cm−3) of as-grown ZnSe:N were derived from Hall measurements. With selenium-rich growth conditions, we can reduce the concentration of compensation defects (VSe-Zn-NSe which acts as a donor in ZnSe). Nitrogen is found to incorporate in ZnSe as a shallow level, which is examined by the dependence of free-to-acceptor emission on the NH3/H2Se molar ratio. The carrier concentration of as-grown ZnSe:N seems to change insignificantly within a wide range of growth temperatures. That is thought to be useful for device fabrication due to uniformity considerations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357029
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  • 5
    Electronic Resource
    Electronic Resource
    Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 236-238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780 °C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101017
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  • 6
    Electronic Resource
    Electronic Resource
    Strain variations in heteroepitaxial InP-on-Si grown by low-pressure metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations in the magnitude and sign of the strain in epitaxial InP directly on (001) Si are studied as a function of layer thickness using photoluminescence and x-ray diffraction techniques. The heteroepilayers were grown by low-pressure metalorganic chemical vapor deposition and showed good quality. We find that biaxial compressive strains are still present in InP layers with thickness up to 0.8 μm. The magnitudes of compressive strains are much larger than those expected from the equilibrium theory. With increasing thickness above 1 μm, the InP/Si layers suffer biaxial tensile strains as a result of differential thermal contraction during the cooling process after growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101137
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  • 7
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low-pressure organometallic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2614-2616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on preliminary results of heteroepitaxial growth of Ga0.51In0.49P on Si with a GaAs interlayer by low-pressure organometallic chemical vapor deposition (OMCVD). The surface morphologies and crystalline quality of the films were found to be critically dependent on the growth parameters of the initial GaAs buffer layer. Under optimum conditions, specular single-crystal Ga0.51In0.49P epilayers can be reproducibly obtained. Capacitance-voltage measurements show that the carrier distribution in the grown layer is very uniform. The 77 K photoluminescence spectrum exhibits a strong near-band-edge emission with a half-width of 22 meV. These results can compete with those reported previously for the OMCVD-grown GaxIn1−xP on GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100175
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  • 8
    Electronic Resource
    Electronic Resource
    Isoelectronic doping in GaAs epilayers grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2653-2655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-doped GaAs epilayers have been grown by molecular beam epitaxy. This work investigates the relatively unexplored In doping concentration in the range of 1017–1019 cm−3. Enhancement in Hall mobility and photoluminescence intensity have been observed. Proper isoelectronic doping may lead to reduction of the unintentional impurity level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100184
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 880-882 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on Si with an intermediate GaAs buffer layer by low-pressure organometallic vapor phase epitaxy is reported. Excellent crystallinity of InP epilayers with specular surfaces can be reproducibly obtained. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/GaAs interface. The 77 K photoluminescence (PL) of the InP layer exhibits a strong near-band-edge emission. No evident shift in PL peak energy for the InP/GaAs/Si sample compared with that for the InP homoepitaxial sample was first observed in this study. These results are superior to those reported previously for the InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99260
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  • 10
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of ZnSe on (100) Si by low-pressure organometallic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1850-1852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers were successfully grown on (100) Si substrates by low-pressure organometallic chemical vapor deposition. The initial growth rate is not critical. The optimum growth temperature of ZnSe/Si is higher than that of ZnSe/GaAs. From x-ray and scanning electron microscopy examinations, single crystalline ZnSe epilayers with mirror-like surfaces can be obtained by a simple growth process. Two-step growth process is a suitable way to improve the ZnSe/Si quality. It seems to be able to remove the Zn vacancy which is associated with the photoluminescence broad band. The efficient 77 K photoluminescence indicates that the ZnSe epilayers are of good quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102185
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