Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    Digitale Medien
    Digitale Medien
    Direct current and microwave characterization of integrated resonant tunneling diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6616-6625 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present an integrated device fabrication sequence for GaAs/AlGaAs resonant tunneling diodes and the results of dc and microwave characterization of the integrated devices. The development of an integrated structure represents a first step toward monolithic or hybrid integration for applications such as oscillators in the 100 GHz–1 THz range. The use of a proton implant in addition to a mesa etch for device isolation allows low parasitic capacitance connections to bond pads, interconnects, or radiating elements. The dc and microwave measurement procedures and an equivalent circuit topology for the integrated device are described. Several features associated with the integrated geometry, including a decrease in peak current density with increasing device diameter, are observed in a study of the current-voltage characteristics of devices with various diameters. Contact resistances are determined from a physically based model and compared with experimental results. Microwave characterization techniques are used to obtain microwave equivalent circuit parameters for the integrated diodes. Device capacitance and conductance are presented as functions of device dimension and bias voltage. Parasitic circuit elements, including series resistance and a capacitance and resistance associated with the proton bombardment used to define the mesa, are also determined from the microwave analysis. The results obtained from microwave impedance measurements are compared with parameters obtained from dc characterization and numerical simulations of comparable device structures. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360483
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Comment on "Quantum Monte Carlo study of the dipole moment of CO" [J. Chem. Phys. 110, 11700 (1999)] (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 4419-4420 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Recently Schautz and Flad concluded that the Hellmann–Feynman theorem holds within the fixed-node diffusion quantum Monte Carlo (DMC) method. We show that the Hellmann–Feynman expression is not in general equal to the derivative of the DMC energy with respect to some parameter λ if the nodal surface depends on λ. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.480990
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Characteristics of Ga0.51In0.49P/GaAs heterostructures grown on Si substrates by organometallic epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 753-756 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have demonstrated the feasibility of heteroepitaxial growth of Ga0.51In0.49P/GaAs layers on Si substrates by low-pressure organometallic vapor phase deposition. The growth parameters of the GaAs buffer layer were confirmed to be the controlling factors in obtaining higher quality Ga0.51In0.49P on Si. Under the optimum growth conditions, specular single-crystal Ga0.51In0.49P layers can be reproducibly obtained. The room-temperature electron mobility of the undoped Ga0.51In0.49P epilayer can reach 1000 cm2 /V s with a carrier concentration of 2×1016 cm−3. The efficient photoluminescence indicates that the Ga0.51In0.49P grown layer is of high optical quality. In addition, the GaAs intermediate layer is also effective in reducing the residual tensile stress in the Ga0.51In0.49P film on Si. The results presented can compete with those reported previously for the OMVPE-grown GaxIn1−xP on GaAs substrates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345755
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 880-882 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heteroepitaxial growth of InP on Si with an intermediate GaAs buffer layer by low-pressure organometallic vapor phase epitaxy is reported. Excellent crystallinity of InP epilayers with specular surfaces can be reproducibly obtained. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/GaAs interface. The 77 K photoluminescence (PL) of the InP layer exhibits a strong near-band-edge emission. No evident shift in PL peak energy for the InP/GaAs/Si sample compared with that for the InP homoepitaxial sample was first observed in this study. These results are superior to those reported previously for the InP/Si heteroepitaxy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99260
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 236-238 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780 °C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101017
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    A Classical Trajectory Study of IVR in Dimethyl Peroxide. 2. Dissociation Lifetimes and Comparison with Statistical Calculations (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 12501-12505 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j100099a010
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Pharmacology of Ch'ang Shan (Dichroa febrifuga) , a Chinese Antimalarial Herb (1948)
    [s.l.] : Nature Publishing Group
    Nature 161 (1948), S. 400-401 
    Details
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] FOR centuries in China the roots (Chang Shan) and the leaves (Shuu Chi) of Dichroa febrifuga, Lour, have been used against malarial fevers. In our first report1 in 1943, it was recorded that a crude extract of this root had been effectively used on clinical cases of tertian ...
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1038/161400b0
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Glycosaminoglycan excretion in random samples of urine
    Amsterdam : Elsevier
    Clinica Chimica Acta 151 (1985), S. 141-146 
    Details
    ISSN: 0009-8981
    Schlagwort(e): GAG ; Glycosaminoglycan ; MPS ; Mucopolysaccharidosis ; Normal range ; Random urine ; Uronic acid to creatinine (UA/C) ratio
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Medizin
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-8981(85)90317-1
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    Screening test for urinary glycosaminoglycans and differentiation of various mucopolysaccharidoses
    Amsterdam : Elsevier
    Clinica Chimica Acta 151 (1985), S. 147-156 
    Details
    ISSN: 0009-8981
    Schlagwort(e): CPC - citrate turbidity test ; MPS paper spot test ; Monodimensional electrophoresis ; Screening test
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Medizin
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-8981(85)90318-3
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    Micropuncture and microperfusion study ofl-glucose secretion in rat kidney (1969)
    Springer
    Pflügers Archiv 305 (1969), S. 155-166 
    Details
    ISSN: 1432-2013
    Schlagwort(e): l-Glucose ; Micropuncture and Microperfusion ; Proximal Tubule ; Active Secretion ; Kinetic Study ; l-Glucose ; Mikropunktion und Mikroperfusion ; proximaler Tubulus ; aktive Sekretion ; kinetische Studien
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Summary Studies with the free flow micropuncture technique have shown that the ratio of TF/Pl-glucose to TF/PInulin in proximal tubular fluid, in distal tubular fluid, and in more than half of the final urine samples measured was greater than one, which suggests thatl-glucose was actively secreted. Studies with the microperfusion technique confirmed this finding and showed thatl-glucose was secreted by the proximal tubules. A maximum rate of secretion was reached at a plasma concentration of 4 mM. The tubular secretion ofl-glucose was augmented by the presence of 16.6 mMd-glucose in tubular lumen and inhibited by 10−4 M phlorizin. Kinetic analysis showed that theV max values forl-glucose secretion in the absence and in the presence ofd-glucose are 5.0×10−10 and 6.3×10−10 mol×cm−2×sec−1 respectively which were very close to the value reported for theV max ford-glucose reabsorption. However, theK m forl-glucose secretion was 3.1 mM and was reduced to 1.6 mM whend-glucose was present in the perfusion fluid. TheK m ford-glucose reabsorption has been reported to be 0.6 mM (8). The results of this investigation were interpreted as being consistant with the hypothesis thatl-glucose secretion andd-glucose reabsorption share the same carrier system.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00585842
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...