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  • 1
    Electronic Resource
    Electronic Resource
    Infrared dielectric constant of cubic SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7255-7258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real dielectric constant for chemical vapor deposition 3C-SiC grown on silicon (Si) has been determined at 300 K and at 5 K from an analytic fit to interference fringes in transmission over the spectral range from the near infrared to the submillimeter region. This technique is capable of high accuracy being limited typically by the sample thickness and accuracy with which the thickness is measured. The resulting real dielectric constant is lower than the values usually attributed to this material. We find: at 300 K ε 0=9.52 and ε ∞=6.38; at 5 K ε0=9.28 and ε ∞=6.22. In all cases the estimated error is ±0.8%. The observed ratio ε0 /ε∞ agrees with the Lyddane–Sachs–Teller relation to 0.1% at 300 K and 0.2% at 5 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360438
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of spin polarized transport across a ferromagnet–two-dimensional electron gas interface (invited) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4665-4669 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin injection at a ferromagnet–semiconductor interface has been demonstrated by convolving the spin-split density of states of carriers in a high mobility InAs quantum well with the spin polarization of conduction electrons in a thin ferromagnetic film. Transport measurements on a diode structure detected a spin-dependent interfacial resistance, with ΔRi/R¯i(approximate)1%. In a different configuration, open circuit voltage experiments measure the spin-dependent shifts in the chemical potential of the carriers in the quantum well. Results of the two techniques are compared over the temperature range 50〈T〈296 K, demonstrating both spin injection and detection at the ferromagnet–semiconductor interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373124
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8192-8194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence has been used to study the band-gap energy of InAs1−xSbx digital superlattices and band alignment of InAs1−xSbx/AlSb quantum wells at 5 K. It is found that the InAs1−xSbx digital alloys have a smaller effective band gap than InAs1−xSbx random alloys. In addition, the valence band offset between type-II InAs/AlSb is determined to be 130 meV. This number reduces as the Sb mole fraction in InAs1−xSbx is increased, and the alignment between InAs1−xSbx/AlSb becomes type I when x〉0.15. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373517
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  • 4
    Electronic Resource
    Electronic Resource
    Optimum growth parameters for type-II infrared lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1796-1799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface, structural, and optical properties of InAs/InGaSb/AlSb mid-infrared lasers grown by molecular beam epitaxy have been systematically studied, respectively, by Nomarski differential interference contrast, high-resolution x-ray diffraction, and variable-temperature photoluminescence. It is found that the optimum growth temperature is between 400 and 450 °C, based on the calibrated transmission thermometry. In addition, the impact of interfacial bond type and Sb sources has been investigated. A 5.91 μm laser, grown with the optimal growth parameters, exhibits a maximum cw operating temperature of 210 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370971
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  • 5
    Electronic Resource
    Electronic Resource
    Type-II quantum-well "W" lasers emitting at λ=5.4–7.3 μm (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4729-4733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of optically pumped type-II quantum-well "W" lasers with wavelengths ranging from 5.4 to 7.3 μm operated at temperatures up to at least 220 K for pulsed operation. The peak output power at 80 K was 1.1 W/facet for a device emitting at λ=7.0 μm. Internal losses were characterized for the temperature range between 40 and 190 K. Auger coefficients determined from an analysis of the threshold pump intensities were found to be suppressed by up to an order of magnitude compared to type-I III–V semiconductors with the same energy gaps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371436
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  • 6
    Electronic Resource
    Electronic Resource
    Tight-binding calculations of energy gaps in (001)-(InAs)n(InSb)m strained superlattices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4319-4323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tight-binding calculations of electronic structures for (001)-(InAs)n(InSb)m strained layer superlattices are presented. The dependences of the superlattice band gap on the band offsets between InAs and InSb are examined for three different types of biaxial strains. It is found that the band gap depends strongly on the band offset, and that for m=1 the ordering lowers the band gap with respect to the random alloy. A comparison with the photoluminescence data for the energy gaps of (n×1) strained-layer superlattices is discussed. In addition, the electronic structures of strained InAs quantum wells are calculated, and interpretations are provided for the observed type-I to type-II band alignment transition at n=5 in a quantum well formed by (n×1) strained layer superlattices and AlSb barriers. Changes of energy gaps with layer thicknesses in strained layer superlattices with n=m and n=8−m are also studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373072
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  • 7
    Electronic Resource
    Electronic Resource
    Transport properties of Be- and Si-doped AlSb (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7876-7879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick epitaxial layers of AlSb(Si) and AlSb(Be) were grown by molecular beam epitaxy and characterized by variable-temperature Hall/van der Pauw measurements. Si is shown to be predominantly an acceptor in AlSb, with an energy level 33±4 meV above the top of the valence band. Be is also an acceptor, with an energy level 38±4 meV above the top of the valence band. Be is a robust doping source for p-AlSb for carrier densities ranging from 1015 to 1019 cm−3. Background impurity levels in AlSb can be assessed by measuring the transport properties of lightly doped AlSb(Be) layers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373470
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  • 8
    Electronic Resource
    Electronic Resource
    Far-field characteristics of mid-infrared angled-grating distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6997-7005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far-field emission characteristics of mid-infrared angled-grating distributed-feedback (α-DFB) lasers with W active regions are calculated using a self-consistent beam-propagation formalism that is more general than previous analyses. The theoretical projections are compared with the results of an experimental study of optically pumped α-DFB devices. Near-diffraction-limited beam quality is obtained both theoretically and experimentally for pump stripes ≤50 μm wide. While simulations employing the theoretical linewidth enhancement factor of 1.7 for the homogeneously-broadened W-laser gain spectrum predict that the good beam quality should be retained for stripes as wide as (approximate)200 μm, the data indicate a much more rapid degradation. That finding can be reproduced only by assuming that inhomogeneous broadening increases the structure's linewidth enhancement factor to (approximate)5. The experiments and theory also yield a steering of the output beam to off-normal angles as large as 6° when temperature tuning shifts the gain peak away from the grating resonance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326858
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  • 9
    Electronic Resource
    Electronic Resource
    Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometry (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6632-6635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission spectra of GaSb have been obtained over a temperature range from 10 to 470 °C. Using this information, transmission thermometry is applied to obtain accurate measurements of sample temperature during molecular beam epitaxy growth on GaSb substrates. A GaSb surface reconstruction transition is determined as a function of Sb flux and substrate temperature, establishing a laboratory-independent temperature standard. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370290
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  • 10
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon δ-doped InSb (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 671-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated magneto-transport and cyclotron resonance (CR) of two-dimensional electron gas in silicon δ-doped p-InSb under a magnetic field of up to 12 T at 4.2 K. Because there are multiple subbands occupied, Shubnikov–de Haas oscillations show a beating behavior. The CR spectra also display several peaks originating from different subbands. Effective masses of electrons associated with the lowest three subbands can therefore be directly determined, and they are in excellent agreement with a self-consistent calculation, which takes into account the electrostatic Poisson equation, the Schrödinger equation, and realistic sample parameters. Furthermore, we observed an absorption peak, whose resonance position has anomalous angle dependence. It is attributed to impurity CR where donors are in the vicinity of the δ-doped sheet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351850
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