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  • 1
    Electronic Resource
    Electronic Resource
    Bending energy and relative stability of micellar forms (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 6102-6104 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100193a083
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature iron-nitride phase transformations induced by ion bombardment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3127-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that for the Fe–N system the combined use of ion irradiation and thermal annealing can lower the temperature for a given phase transformation. By Ar bombarding N-implanted Fe samples at 250 and 300 °C, we have induced the ε-Fe2N⇒ε-Fe2+xN+ε-Fe3.2N and the ε-Fe2N⇒ε-Fe3N+γ′-Fe4N phase transformations, respectively. These temperatures are 50 °C lower than the ones needed to produce the same transformations by thermal annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363825
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  • 3
    Electronic Resource
    Electronic Resource
    Range measurements and thermal stability study of AZ111 photoresist implanted with Bi ions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2502-2506 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Rutherford backscattering technique has been used to determine the range parameters of Bi ions implanted into AZ111 photoresist film at energies from 10 to 400 keV. An overall good agreement is found between the experimental results and the theoretical predictions by Biersack, Ziegler, and Littmark. It is also observed that a variation in the implantation dose does not affect the projected range and range straggling results, despite the fact that chemical modification of the implanted polymer layer is detected. In addition, we find that a shallow implantation of the polymer film with Bi ions increases the temperature at which the photoresist starts to decompose. Finally, at 300 °C the implanted Bi atoms diffuse preferentially toward the bulk. For this temperature, two different diffusion coefficients are estimated, one for the damaged region Dd=1.2×10−5 cm2/s and another for the bulk Db=1.2×10−14 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341029
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  • 4
    Electronic Resource
    Electronic Resource
    Implanted boron depth profiles in the AZ111 photoresist (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2083-2085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isotope 10B has been implanted into the photoresist AZ111 in the 30–150 keV energy range. The corresponding depth profiles have been analyzed using the 10B(n,α)7Li reaction. At 60 keV, the profile changes from a regular shape to one with an additional tail directed towards the surface. Despite the nonregular shape of the ion distributions, it is possible to extract the characteristic range parameters such as projected range Rp, most probable range Rˆ, and full width at half-maximum. Good agreement is found between the experimental results and the calculations by Ziegler, Biersack, and Littmark (ZBL). It is also shown that the tail distribution follows closely the ZBL calculated ionization profiles. A tentative explanation of this behavior is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341112
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of Xe post-bombardment on carbonitrides produced in a low-carbon nitrogen-implanted steel (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4487-4493 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Xe bombardment on carbonitrides produced by N implantation in a low-carbon steel are studied via conversion electron Mössbauer spectroscopy and nuclear reaction analysis. The results show two main features: dissolution and reprecipitation of the produced carbonitrides and modification of the thermal behavior of the precipitates. Recently we have performed similar experiments bombarding samples of the same steel with He and Ar. Comparison of the experiments shows that irradiation with Ar ions provides the best retention of carbonitrides at 450 °C. On the other hand, irradiation with Xe ions to the same dpa level is most effective in producing the dissolution and reprecipitation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346199
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  • 6
    Electronic Resource
    Electronic Resource
    Recrystallization behavior of silicon implanted with iron (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5423-5426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1×1015 cm−2, 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push-out of Fe atoms by the moving amorphous-crystalline (a-c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and released when they are reached by the moving a-c interface during the SPEG process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350564
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  • 7
    Electronic Resource
    Electronic Resource
    Phase separation in ion bombarded FeNi Invar alloys (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 131-134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of the effects of ion bombardment on the phase equilibria and ordering of FeNi alloys with 30.6 and 39.5 at. % Ni were performed. The FeNi samples were bombarded with Ne, Ar, and Kr at different doses and temperatures, and analyzed using the conversion electron Mössbauer spectroscopy (CEMS) technique with 57Fe. The changes in the CEMS spectra of Fe69.4Ni30.6 and Fe60.5Ni39.5 alloys, bombarded with Ne and Ar, indicate a phase separation, but no evidence of ordering. The Kr bombardment does not produce any change, however samples of 39.5 at. % Ni already showing phase separation returned to the single phase state after Kr irradiation. Our results give strong evidences of a prevalence of displacement mixing for bombardment with heavier ions, and of radiation enhanced diffusion for bombardment with lighter ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350325
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  • 8
    Electronic Resource
    Electronic Resource
    Very thin Fe/Ni modulation multilayer films under ion bombardment : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4773-4775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effect of noble gas irradiation (He, Ne, and Xe) on Fe–Ni multilayers with a very thin modulation and nominal composition in the Invar region Fe0.63Ni0.37. The evaluation of the formation/stability of the Fe–Ni phases formed under irradiation with different ions and doses was followed by conversion electron Mössbauer spectroscopy. The magnetic hysteresis curves were also obtained in order to correlate the hyperfine pattern with magnetic properties. The as-deposited sample reveals mainly the characteristic α-Fe while He- and Ne-irradiated samples clearly show a phase transformation with segregation of γ-FeNi phases with different Ni concentrations, a magnetic atomically ordered phase (∼50% Ni), and a nonmagnetic phase (≤30% Ni). However, mixing with Ne is more effective than with He for similar doses. The results obtained with Xe showed a large distribution of hyperfine fields similarly to previous results reported for Kr [C. Tosello, F. Ferrari, R. Brand, W. Keune, G. Marest, M. A. El Khakani, J. Parellada, G. Principi, S. Lo Russo, V. Rigato, and S. Enzo, Nucl. Instrum. Methods B 80/81, 417 (1993)]. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364679
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  • 9
    Electronic Resource
    Electronic Resource
    Ion radiation induced diffusion of Xe implanted into a polymer film (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5139-5144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work, we have studied the most important parameters which can influence the radiation induced diffusion mechanism of Xe ions implanted into a photoresist film. With this aim, we have Ar post-bombarded the Xe implanted samples at a fixed Ar ion energy, covering a wide range of fluences. In addition, the implantation fluences, as well as the ion species used in the bombardment, were changed. The results show that the radiation induced diffusion process undergoes a trapping-detrapping mechanism. The trapping probability is proportional to the implanted fluence, and the detrapping one depends on the kind of ion used in the bombarding experiment. Finally, it is shown that the nuclear energy transfer plays an important role in the radiation induced diffusion mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352044
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  • 10
    Electronic Resource
    Electronic Resource
    Growth kinetics of solid-state-reacted Fe-Zr multilayer films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4870-4876 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayers of Fe0.33Zr0.67, prepared by electron beam evaporation, have been characterized by conversion electron Mössbauer spectroscopy, Rutherford backscattering spectroscopy, and x-ray diffraction. Two phases, one amorphous and another crystalline (FeZr3), occur by solid-state reaction. For temperatures of 350 and 500 °C and annealing times ranging from 10 min to 72 h the growth rates of both phases had been obtained. From these results we suggest a model to describe the phase growth kinetics of the amorphous-crystalline Fe0.33Zr0.67 multilayer thin film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349029
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