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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4763-4770 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathode spots on arc-cleaned copper and molybdenum electrodes in vacuum were studied by fast image converter framing and streak camera photography with high temporal and spatial resolution. The frame exposure time was 20 ns and the interframe period was 200 ns; the streak sweep time was between 200 ns and 1 μs. Spatial structures with a resolution of 5 μm could be determined by observing the spot movement with a small slit at the streak camera and a high sweep speed. Strong fluctuations of the light emission of the spot were found with characteristic times of 50–100 ns. When the spot moved out of the slit field of view a stepwise decrease occurred in the measured light, indicating an internal substructure of the spot with distances between fragments less than 10 μm and even smaller fragment diameters. The current per fragment was estimated to be 20–40 A. The frames confirm the short time constants of the spot. From frame to frame a spot motion was observed in most cases, yielding spot residence times 〈200 ns.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 827-829 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Vacuum arcs can be initiated by simply applying a sufficiently high voltage (∼ 1 kV) between the anode and cathode, provided that there is a conducting path between these electrodes. Typically, the conducting path is obtained by coating the ceramic insulator. Plasma is formed explosively at the coating-cathode interface. Since neither a trigger supply nor a trigger electrode are required, the method has been dubbed "triggerless" arc initiation. Triggerless operation of a vacuum arc ion source was demonstrated for a number of cathode materials. It was found that triggerless operation is very reliable as long as the balance of deposition and erosion of the conducting material leads to a steady-state path resistance in the range from 1 Ω to 100 kΩ. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 65 (1995), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: To assess the importance of the cysteine residues Cys347 and Cys351 in the carboxylic tail in the human D1 dopamine receptor, seven mutant receptors were constructed by PCR. The pharmacological and functional properties of the wild-type and mutant receptors were assessed following transient expression in COS-7 cells. Affinities for [3H]SCH 23390 of mutant S347 (Cys347→ Gly), T348 (Tyr348→ stop), S351 (Cys351→ Gly), T351 (Cys351→ stop), T352 (Pro352→ stop), and S347/S351 (Cys347→ Gly and Cys351→ Gly) were similar to that of wild-type receptor, whereas the expression levels were reduced up to 80%. The potency of dopaminergic antagonists for these mutant receptors was very similar to that of the wild-type receptor. However, mutant T347 (Cys347→ stop) showed a 15–25-fold reduced affinity for the antagonists SCH 23390, (+)-butaclamol, and cis-flupentixol, thus not allowing radioligand analysis. Wild-type and mutant receptors responded dose-dependently with similar potency to dopamine and SKF 38393 with an increased adenylyl cyclase activity. However, mutant receptors with the Cys347 residue changed or removed displayed a diminished ability to activate adenylyl cyclase. Dopamine preexposure desensitized wild-type and mutant S351 receptors. However, mutant receptors with Cys347 replaced or the distal part of the carboxyl tail removed were unable to desensitize. Thus, Cys347 in the cytoplasmic tail of the human D1 dopamine receptor is important for the receptor in maintaining the conformation for antagonist binding, to play a crucial role in activation of adenylyl cyclase, and to be essential for agonist-induced desensitization.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1656-1664 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma immersion ion implantation and deposition is a novel process for surface modification. By combining plasma deposition and ion implantation and using filtered vacuum arc plasmas, thin film formation, direct and recoil ion implantation, and ion-beam-assisted intermixing of the film and substrate can be accomplished simultaneously. The implications of this technique in tribology of magnetic recording media have been investigated experimentally. Surfaces of Al2O3-TiC heads were modified with silver, carbon, and titanium ions at doses of 3×1016 ions/cm2 and mean implantation energies between 2.0 and 4.2 keV. Simulation results indicated that the modified regions exhibited high concentrations of implanted species in the top 2–3 nm, atomically mixed interfaces, and thicknesses between 10 and 25 nm. Surface imaging with an atomic force microscope and nanoindentation testing revealed that the modified heads possessed smoother topographies and increased hardnesses. Contact start-stop and continuous sliding experiments with modified heads and carbon-coated magnetic rigid disks and microscopy observations demonstrated that significant enhancement of the friction and wear characteristics can be achieved with the present surface modification technique. The possible reasons for the improved tribological behavior and the predominant mechanisms during contact start-stop and continuous sliding are interpreted in light of the obtained experimental results.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond nucleation on unscratched silicon substrates was investigated using a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were coated with thin films of amorphous carbon using a vacuum arc technique. The carbon-coated silicon substrates were pretreated with a methane-rich plasma at relatively low temperatures and were subsequently exposed to the diamond nucleation conditions. The significance of the pretreatment on the diamond nucleation density was examined by varying the methane concentration, chamber pressure, and exposure time. Scanning electron microscopy demonstrated that densely packed spherical nanoparticles on the pretreated surfaces played the role of diamond nucleation seeds. Raman spectroscopy analysis showed that the nucleation seeds consisted of nonhydrogenated carbon and that their structure was influenced by the pretreatment conditions. Transmission electron microscopy revealed that the nucleation seeds comprised disordered graphitic carbon and ultrafine diamond crystallites. Submicrometer films of good quality diamond possessing significantly higher nucleation densities (∼5×1010 cm−2) were grown from nanoparticles produced under optimum pretreatment conditions. The enhancement of the diamond nucleation density is mainly attributed to the formation of a large number of nanoparticles, which provided sufficient high-surface free-energy sites for diamond nucleation, in conjunction with their high etching resistance to atomic hydrogen stemming from the significant percentage of sp3 atomic carbon configurations, as evidenced by the presence of nanocrystalline diamond in the nanoparticle structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3223-3223 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4285-4292 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated laser operation at room temperature on the Cui (511,578 nm) and Aui (312,628 nm) transitions and obtained specific pulse energies for the Cui 511 nm and Aui 628 nm lines of about 5 and 2 μJ cm−3, respectively, from a single-section tube. A simple theoretical model has been used to show that the reduced outputs for the Cui 578 nm and Aui 312 nm lines are due to the significantly smaller fraction of the working volume in saturation in each case. The metal vapor column of length 20 cm and local ground-state concentration in the 1014–1015 cm−3 range is produced on demand in a single-section tube in less than 10 ms. The highest output power obtained is for a 90% He in an Ar/He mixture at a total flowrate of 1.8 l min−1, the tube pressure being 20 mbar. A specific sputtering discharge energy of approximately 600 mJ cm−3 is needed to obtain a peak power of 1 kW on either the Cui 511 nm or Aui 628 nm lines.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 801-803 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed several different embodiments of repetitively pulsed vacuum arc metal plasma gun, including miniature versions, multicathode versions that can produce up to 18 different metal plasma species between which one can switch, and a compact high-duty cycle well-cooled version, as well as a larger dc gun. Plasma guns of this kind can be incorporated into a vacuum arc ion source for the production of high-energy metal ion beams, or used as a plasma source for thin film formation and for metal plasma immersion ion implantation and deposition. The source can also be viewed as a low-energy metal ion source with ion drift velocity in the range 20–200 eV depending on the metal species used. Here we describe the plasma sources that we have developed, the properties of the plasma generated, and summarize their performance and limitations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30–40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the "anode'' plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al2O3 at 600–800 °C. The films were investigated by photoluminescence, cathodoluminescence, x-ray diffraction, Rutherford backscattering, and particle-induced x-ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 956-958 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Conventional ion sources generate energetic ion beams by accelerating the plasma-produced ions through a voltage drop at the extractor, and since it is usual that the ion beam is to propagate in a space which is at ground potential, the plasma source is biased at extractor voltage. For high ion beam energy the plasma source and electrical systems need to be raised to high voltage, a task that adds considerable complexity and expense to the total ion source system. We have developed a system which though forming energetic ion beams at ground potential as usual, operates with the plasma source and electronics at ground potential also. Plasma produced by a nearby source streams into a gridded chamber that is repetitively pulsed from ground to high positive potential, sequentially accepting plasma into its interior region and ejecting it energetically. We call the device a peristaltic ion source. In preliminary tests we've produced nitrogen and titanium ion beams at energies from 1 to 40 keV. Here we describe the philosophy behind the approach, the test embodiment that we have made, and some preliminary results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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