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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of heavily carbon-doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 981-987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped GaAs with carbon concentrations ranging from 2×1017 cm−3 to 2.6×1020 cm−3 has been characterized by variable temperature Hall effect measurements, secondary ion mass spectrometry (SIMS), and double-crystal x-ray diffraction (DCXD). The samples studied were grown by metalorganic chemical vapor deposition (MOCVD) and by metalorganic molecular beam epitaxy (MOMBE). The hole mobility is dominated by degenerate conduction for hole concentrations ≥1×1019 cm−3, and the 77 K resistivity is typically 30%–35% lower than at 300 K in these samples. The mobilities of C-doped p+-GaAs are found to be significantly higher than for Zn- or Be-doped p+-GaAs for doping concentrations in excess of 2×1018 cm−3. The maximum achievable hole mobilities for C-doped material grown by the two techniques are nearly identical, indicating that neither MOCVD nor MOMBE has an inherent advantage over the other for producing low-resistivity p-type GaAs. SIMS analysis and Hall effect measurements reveal that the total carbon concentration, [C], is higher than the as-grown hole concentration, p, in the most heavily doped samples. DCXD measurements show general agreement with the lattice mismatch predicted by Vegard's law. However, for [C](approximately-greater-than)1020 cm−3 a discrepancy between the predicted and measured mismatch suggests that partial lattice relaxation or the presence of interstitial carbon may need to be considered in order to adequately describe the lattice contraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351776
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  • 2
    Electronic Resource
    Electronic Resource
    Yellow–green luminescence from isoelectronic nitrogen centers in GaP grown by molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1841-1843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam-epitaxial growth of GaP incorporating isoelectronic N traps was achieved through coinjection of NH3 and PH3 which were dissociated into P2 and PN fluxes. The photoluminescence spectrum of a sample with a N concentration of ∼2×1019 cm−3 indicated that the dominant emission wavelength was at 5691 A(ring) (2.18 eV), which is characteristic of the nearest-neighbor pair transition NN1. The spectrum of a sample containing ∼2×1020 cm−3 N atoms also displayed strong NN1 pair luminescence in addition to much stronger emission line at 5846 A(ring) (2.121 eV), which is believed to be from a local mode outside the vibrational band. The peak intensity of this local mode was ∼25 times greater than the peak emission of the NN1 line from the lighter doped sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349501
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogenation of Si- and Be-doped InGaP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5866-5870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the hydrogenation of Be-doped (p-type) and Si-doped (n-type) In1−xGaxP epitaxial layers grown lattice matched to GaAs (x ∼ 0.5). Low-temperature (1.7 K) photoluminescence, electrochemical carrier concentration profiling, and scanning electron microscopy are used to study the effects of hydrogenation on carrier recombination, carrier concentration, and surface morphology. Hydrogenation is found to passivate Si donors and Be acceptors and to improve photoluminescence efficiency, but causes mild surface damage. The carrier concentration following hydrogenation is found to be lowest in acceptor-doped material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346961
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of the thermal dissociation of PH3 and NH3 using quadrupole mass spectrometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8025-8030 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal dissociation of PH3 and NH3 injected through a Ta-based high-pressure gas-injection cell were studied. Using a quadrupole mass spectrometer, the Ta was found to effectively dissociate the PH3 into primarily P2, P4, and H2 molecules with an injector temperature as low as 550 °C. The introduction of NH3 through this same injector resulted in dissociation into N2 and H2 for an injector temperature greater than 900 °C. When NH3 and PH3 were coinjected, again P2, P4, N2, and H2 were the primary molecules produced; however, an additional dimer, PN, was also detected. The PN concentration was maximum at a cell temperature of 700 °C. This dimer was found to be an effective source for introducing nitrogen as an isoelectronic trap in GaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347447
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  • 5
    Electronic Resource
    Electronic Resource
    The gas source molecular beam epitaxial growth of AlxGa1−xP on (100) GaP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2133-2139 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of AlxGa1−xP for Al mole fractions between 0 and 1 has been achieved on (100) GaP substrates using gas source molecular beam epitaxy with elemental Ga and Al, and P2 cracked from PH3 as the source materials. The observed reflection high energy electron diffraction pattern of the GaP surface indicates that an exponential increase in the incident P2 flux is required to maintain good morphology beyond 690 °C. This temperature was found to correspond closely to the congruent vaporization temperature of Ga from the growth surface. The addition of Al on the surface was found to substantially increase the Ga congruent vaporization temperature from the GaP surface. The growth rates for AlxGa1−xP as a function of growth temperature between 600 and 750 °C were determined by transmission electron microscopy. Using elemental Si as an n-type dopant, free electron concentrations as high as 1.65×1019 cm−3 in GaP and 1.5×1019 cm−3 in Al0.28Ga0.72P were achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346569
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  • 6
    Electronic Resource
    Electronic Resource
    Incorporation of arsenic and phosphorus in GaxIn1−xAsyP1−y alloys grown by molecular-beam epitaxy using solid phosphorus and arsenic valved cracking cells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7652-7656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of GaxIn1−xAsyP1−y was performed on (001) InP by molecular-beam epitaxy employing solid phosphorus and arsenic valved sources. Relative anion incorporation rates were found strongly dependent upon the Ga mole fraction, growth temperature, and incident As and P beam fluxes. The relative incorporation of As and P can be predicted from the ratio of the square of the incident column-V fluxes. Although the As anion always incorporated preferentially into the lattice, significant enhancement in P incorporation was observed as growth temperature and Ga mole fraction increased. Strong spinoidal decomposition and a temperature-dependent surface morphology was found for lattice-matched compositions having peak photoluminescence emission wavelengths between 1.25 and 1.36 μm. Heterojunction laser diodes utilizing different GaxIn1−xAsyP1−y active regions were fabricated with emission ranging from 1.21 to 1.53 μm. The best broad area threshold current density obtained for a 500 μm cavity length was 1.7 kA/cm2 with a maximum two facet slope efficiency of 0.24 W/A, which is comparable to the state-of-art performance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362429
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  • 7
    Electronic Resource
    Electronic Resource
    Compositional modulation and long-range ordering in GaP/InP short-period superlattices grown by gas source molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long-range ordering in a (GaP)2/(InP)2 short-period superlattice and a Ga0.525In0.475P buffer layer grown on a (001)GaAs substrate by gas source molecular beam epitaxy were studied. Transmission electron microscopy and low-temperature cathodoluminesence techniques were used to examine the microstructure of the short-period superlattice and to determine its band-gap energy. The superlattice layer was found to have a [001] long-range ordered structure with a band gap narrowing of about 130 meV, while the Ga0.525In0.475P layer had a 37 meV band-gap narrowing induced by spontaneous long-range ordering in the [111] direction. The ordered superlattice layer was found to have a growth-induced lateral periodic modulation of the composition along the [1¯10] direction. Within the modulating bands, which had a 200 A(ring) periodicity, the In composition was found to vary from 42 to 56% while the Ga correspondingly varied between 58 and 44%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103903
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  • 8
    Electronic Resource
    Electronic Resource
    Three-terminal delta-doped barrier switching device with S-shaped negative differential resistance (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 663-665 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A molecular beam epitaxial grown GaAs three-terminal device with a delta-doped barrier and GaInAs quantum well exhibiting controllable S-shaped negative differential resistance and switching voltages has been fabricated and tested. The device has a large potential barrier between the anode and cathode regions which can be modulated via a third terminal. The modulation of the potential barrier has a substantial effect on the switching behavior of the device. For the devices having a cathode contact area of 50 μm2, a spectrum analyzer reveals unstable oscillation up to the system measurement limit of 21 GHz. The output power signal for the best device is greater than −10 dBm which is 20 dB above the noise floor at 20.8 GHz. The results show this device to be a potentially useful and promising high-frequency oscillator.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101815
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  • 9
    Electronic Resource
    Electronic Resource
    High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 457-459 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on high-power strained-layer InGaAs quantum well heterostructure laser arrays. These devices are periodic nonplanar arrays, formed by a single metalorganic chemical vapor deposition growth over a selectively etched corrugated GaAs substrate. The corrugation serves to provide both stripe definition and index guiding while suppressing lateral lasing perpendicular to the stripes. Maximum pulsed optical powers of 2.5 W/facet (width=1600 μm, length=440 μm) for an emission wavelength of 1.03 μm have been obtained from uncoated devices having threshold current densities in the range 290–600 A/cm2. Far-field radiation patterns indicate that the arrays are phase locked.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99883
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  • 10
    Electronic Resource
    Electronic Resource
    Surface structure of (100) GaP grown by gas source molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2201-2203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ reflection high-energy electron diffraction analysis was used to investigate the surface structure of the GaP epitaxial layers grown on (100) GaP substrates by gas source molecular beam epitaxy as a function of substrate temperature and V/III flux ratio. It was found that for GaP, column V and column III stabilized surfaces corresponded to the (2×4) and (4×2) reconstruction pattern, respectively, which is characteristic of most all III-V binary compound semiconductors. In the transition region, however, the surface exhibited a ((19)1/2 ×4 reconstruction pattern. At substrate temperatures below 660 °C and 685 °C for P- and Ga-stabilized surfaces, respectively, the surface structure was insensitive to temperature. Beyond 660 and 690 °C, the surface structure exhibited an exponential flux dependence with increasing substrate temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102966
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